Spatio-Temporal High-Speed Modulation of Semiconductor Optoelectronics by Lateral Electric Fields

横向电场对半导体光电器件的时空高速调制

• 批准号: 0072986
• 负责人: David Citrin
• 金额: $ 18万
• 依托单位: Washington State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-09-01 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0072986&HistoricalAwards=false
• 关键词: Spatio; Temporal; Speed; Modulation; Semiconductor

This proposal addresses fundamental physical issues impacting the growing area of integration of high-frequency electronics with optoelectronics and photonics. Our focus is theoptical properties of semiconductors (quantum wells, wires, and dots) in the presence of strongdc and high-frequency (GHz-THz) electric fields.In particular, we will concentrate on cases where the high-frequency field is applied capacitively,i.e., it does not introduce additional carriers. The particular phenomena we will consider involvean interplay of ultrafast carrier dynamics in high-frequency fields, screening of the field bythe spatial motions of the carrier distributions, propagation effects of the high-frequency field,and the interaction of the carrier distributions with light. Thus, the work will unite both microand macroscopic length scales as well as dynamics on the femto to nanosecond timescales. Our effort will be primarily theoretical and computational. Together with our experimental collaborators, we will study the spatio-dynamics of carriers in photoconductors, semiconductor optical amplifier, and VCSEL's in the presence of the high-frequency fields. In the phenomena we will explore, the spatial aspects play a key role; on the one hand, we will be concerned with how such high-frequency fields adversely perturb the operation of optoelectronics and photonics, while on the other, we will explore potential phenomena for device applications. Potential applications include ultrahigh-bandwidth optical switching, enhanced photoconductive THz generation, ultrahigh-speed optical modulators, lateral mode control from semiconductor light emitters, and ultrahigh-speed beem steering.

该提案解决了影响高频电子学与光电子学和光子学不断增长的集成领域的基本物理问题。 我们的重点是强直流和高频 (GHz-THz) 电场下半导体（量子阱、线和点）的光学特性。特别是，我们将重点关注电容性应用高频场的情况，即不引入额外的载流子。我们将考虑的特殊现象涉及高频场中超快载流子动力学的相互作用、载流子分布的空间运动对场的屏蔽、高频场的传播效应以及载流子分布与光的相互作用。 因此，这项工作将结合微观和宏观的长度尺度以及飞秒到纳秒时间尺度上的动力学。我们的努力主要是理论和计算方面的。 我们将与我们的实验合作者一起研究高频场存在下光电导体、半导体光放大器和 VCSEL 中载流子的空间动力学。 在我们将要探索的现象中，空间方面起着关键作用。一方面，我们将关注这种高频场如何对光电和光子学的运行产生不利干扰，而另一方面，我们将探索设备应用的潜在现象。 潜在的应用包括超高带宽光开关、增强型光电导太赫兹产生、超高速光调制器、半导体光发射器的横向模式控制以及超高速光束控制。