Small Grants for Exploratory Research: Nanofabrication Techniques Based on Two Levels of Molecular Self-Assembly Self-Assembled Monolayers & Ordering of Block Copolymers

摘要CTS-9708944 Nealy，Paul F. 威斯康星州大学，麦迪逊 该提案的短期研究目标是展示下文所述的抗蚀剂系统的使能技术。 这一建议的探索性研究的小赠款支持调查的界面现象，管理的图案化的疏水/亲水表面上的两亲性嵌段共聚物的薄膜的排序。 光学光刻是制造微电子器件的最广泛的技术，其所能生产的特征尺寸正在接近下限（100 nm）。 与此同时，毫无疑问，对更密集、更快、更强大的电路的需求将继续下去。 较小的特征（50纳米）可以用电子束写入或触针光刻来制作。 然而，这些方法目前是连续的，需要大量的商业应用的重大发展。 基于较短波长辐射的光刻，例如极紫外（EUV）和X射线光刻（XRL），具有所需的分辨率。但是对于低于100 nm的应用，不存在令人满意的抗蚀剂材料。 目前的抗蚀剂系统依赖于诸如扩散和溶解的动力学过程。 这些系统的原理不能盲目地外推到纳米级，因为微小的公差和余量会消失。 新的抗蚀剂系统的纳米制度必须能够产生的分子尺寸的公差和原子尺寸的边缘的功能。 提出的长期研究目标是开发基于界面现象和两个分子水平的纳米纤维技术：自组装单层（SAM）和块的薄膜的有序化，因为它导致处于（或接近）热力学最小值的平衡结构。 自组装单分子层（SAM）将在基底的表面上形成，并且SAM将在两亲性嵌段共聚物的平面中图案化，将沉积在基底上，并且表面能将在退火时控制强分离共聚物的有序化。 如果图案化的SAM的尺寸与聚合物分子的尺寸具有相同的数量级，则聚合物膜中的结构将垂直于衬底被诱导。 低表面能的区域将被聚合物的疏水嵌段覆盖，并且高表面能的区域将被聚合物的亲水嵌段覆盖。 预期传播的顺序将穿过沉积膜的整个厚度。 嵌段共聚物的嵌段之一将被选择性蚀刻。 横向尺寸为数十纳米的异形图案将以X射线光刻的分辨率从图案化的SAM转移到抗蚀剂材料（共聚物的剩余嵌段）。

ABSTRACT CTS-9708944 Nealy, Paul F. U of Wisconsin, Madison The proposal's short-term research goal is to demonstrate the enabling technology for the resist system described below. This proposal for a Small Grants for Exploratory Research supports the investigation of the interfacial phenomena that govern the ordering of thin films of amphiphilic block copolymers on patterned hydrophobic/hydrophilic surfaces. Optical lithography, the most widespread technique for the fabrication of microelectronic devices, is approaching the lower limit (100 nm) in the size of features that it can produce. At the same time, there is little doubt that the need for denser, faster and more powerful circuits will continue. Smaller features (50nm) can be produced with electron beam writing or stylus lithography. These processes, however, are currently serial and will require significant development for high-volume commercial applications. Lithographies based on shorter wavelength radiation, for example extreme ultra violet (EUV) and X-ray lithography (XRL), have the required resolution. but no satisfactory resist materials exist for applications below 100 nm. Current resist systems rely on kinetic processes such as diffusion and dissolution. The principles that govern these systems cannot be blindly extrapolated in the nanometer regime because of vanishing small tolerances and margins. New resist systems for the nanometer regime must be able to produce features of molecular dimensions with tolerances and margins of atomic dimensions. The proposed long -term research goal is to develop a nanofabrication technique based on interfacial phenomena and two levels of molecular: self-assembled monolayers (SAMs) and ordering of thin films of block because it leads to equilibrium structures that are at (or close to) thermodynamic minimum. Self-assembled monolayers (SAMs) will be formed on the surface of a substrate, and the SAMs will patterned in the plane of the amphiphilic block copolymer will be depos ited on the substrate, and surface energy will govern the ordering of the strongly segregating copolymer upon annealing. If the dimensions of the patterned SAMs are of the same order of magnitude as the dimensions of the polymer molecules, then structure in the polymer film will be induced normal to the substrate. Regions of low surface energy will be covered with the hydrophobic block of the polymer, and regions of high surface energy will be covered with the hydrophilic block of the polymer. It is expected that the order to propagate will pass through the entire thickness of the deposited film. One of the blocks of the block copolymer will be selectively etched. Arbitrarily shaped patterns with lateral dimensions of tens of nanometers will be transferred from the patterned SAMs to resist material (the remaining block of the copolymer) at the resolution of X-ray lithography.