Small Grants for Exploratory Research: Nanofabrication Techniques Based on Two Levels of Molecular Self-Assembly Self-Assembled Monolayers & Ordering of Block Copolymers

麦迪逊威斯康星州保罗·F·U的CTS-9708944研究计划的短期研究目标是展示下面描述的抵抗系统的使能技术。这一小笔探索性研究补助金的提议支持了对两亲嵌段共聚物在有图案的疏水/亲水表面上的薄膜有序化的界面现象的研究。光学光刻是制造微电子器件最广泛的技术，它可以产生的特征尺寸正在接近下限(100 Nm)。与此同时，毫无疑问，对更密集、更快、更强大的电路的需求将继续存在。更小的特征(50 Nm)可以用电子束写入或触针光刻来产生。然而，这些工艺目前是连续的，需要对大量商业应用进行重大开发。基于较短波长辐射的光刻，例如极端紫外线(EUV)和X射线光刻(XRL)，具有所需的分辨率。但对于100 nm以下的应用，还没有令人满意的抗蚀剂材料。目前的抗蚀剂体系依赖于扩散和溶解等动力学过程。管理这些系统的原则不能盲目地外推到纳米体制中，因为小公差和边际消失了。用于纳米领域的新的抗蚀剂系统必须能够产生分子尺寸的特征，以及原子尺寸的公差和裕度。提出的长期研究目标是开发一种基于界面现象和两个分子水平的纳米制造技术：自组装单分子膜(SAM)和块状薄膜的有序化，因为它导致平衡结构处于(或接近)热力学最低。自组装单分子膜将在衬底表面形成，并在两亲嵌段共聚物的平面上形成图案。两亲嵌段共聚物在衬底上沉积，表面能将控制强分离共聚物在热处理时的有序性。如果图案化的自组装膜的尺寸与聚合物分子的尺寸具有相同的数量级，则聚合物薄膜中的结构将垂直于衬底诱导。低表面能的区域将被聚合物的疏水嵌段覆盖，而高表面能的区域将被聚合物的亲水嵌段覆盖。预计传播的顺序将穿过沉积薄膜的整个厚度。嵌段共聚物的其中一个嵌段将被选择性地蚀刻。在X射线光刻的分辨率下，横向尺寸为数十纳米的任意形状的图案将从图案化的自组装膜转移到抗蚀剂材料(共聚物的剩余嵌段)上。

ABSTRACT CTS-9708944 Nealy, Paul F. U of Wisconsin, Madison The proposal's short-term research goal is to demonstrate the enabling technology for the resist system described below. This proposal for a Small Grants for Exploratory Research supports the investigation of the interfacial phenomena that govern the ordering of thin films of amphiphilic block copolymers on patterned hydrophobic/hydrophilic surfaces. Optical lithography, the most widespread technique for the fabrication of microelectronic devices, is approaching the lower limit (100 nm) in the size of features that it can produce. At the same time, there is little doubt that the need for denser, faster and more powerful circuits will continue. Smaller features (50nm) can be produced with electron beam writing or stylus lithography. These processes, however, are currently serial and will require significant development for high-volume commercial applications. Lithographies based on shorter wavelength radiation, for example extreme ultra violet (EUV) and X-ray lithography (XRL), have the required resolution. but no satisfactory resist materials exist for applications below 100 nm. Current resist systems rely on kinetic processes such as diffusion and dissolution. The principles that govern these systems cannot be blindly extrapolated in the nanometer regime because of vanishing small tolerances and margins. New resist systems for the nanometer regime must be able to produce features of molecular dimensions with tolerances and margins of atomic dimensions. The proposed long -term research goal is to develop a nanofabrication technique based on interfacial phenomena and two levels of molecular: self-assembled monolayers (SAMs) and ordering of thin films of block because it leads to equilibrium structures that are at (or close to) thermodynamic minimum. Self-assembled monolayers (SAMs) will be formed on the surface of a substrate, and the SAMs will patterned in the plane of the amphiphilic block copolymer will be depos ited on the substrate, and surface energy will govern the ordering of the strongly segregating copolymer upon annealing. If the dimensions of the patterned SAMs are of the same order of magnitude as the dimensions of the polymer molecules, then structure in the polymer film will be induced normal to the substrate. Regions of low surface energy will be covered with the hydrophobic block of the polymer, and regions of high surface energy will be covered with the hydrophilic block of the polymer. It is expected that the order to propagate will pass through the entire thickness of the deposited film. One of the blocks of the block copolymer will be selectively etched. Arbitrarily shaped patterns with lateral dimensions of tens of nanometers will be transferred from the patterned SAMs to resist material (the remaining block of the copolymer) at the resolution of X-ray lithography.