SNM: Scaling Directed Self-Assembly of Block Copolymers for Sub 10 nm Manufacturing

这笔赠款提供资金，以解决在器件结构的纳米制造中广泛实施定向自组装(DSA)所必需的基本和技术问题。具体地说，嵌段共聚物将被引导在使用传统光刻工艺(如193 nm浸渍或电子束光刻)定义的化学预图案上组装。嵌段共聚物自组装成具有高度均匀尺寸和形状的有序阵列。因此，DSA将把传统光刻的20-40 nm分辨率降低到5-10 nm范围。拟议工作的主要活动包括：制备超薄和高分辨率的化学纳米衬底，以实现特征尺寸在10 nm及以下的DSA；开发在自组装嵌段共聚物膜上沉积表面层的策略，作为一种实现高分辨率组装的手段；以及所有嵌段共聚物气相合成、沉积和定向自组装。化学气相沉积聚合物纳米涂层的新的和可扩展的工艺是所有活动的关键，所提出的努力代表了一种真正协调的计算和实验方法，通过预测分子模拟来实现材料和工艺的设计。这项研究旨在建立一条经过验证的途径，实现低于10 nm的分辨率，并提供缩小到5 nm的比例，具有革命性的纳米光刻和纳米制造的潜力。对于半导体行业，数字减影技术可能允许按照摩尔？S定律制造下一代速度更快的计算机芯片，而不必投资数十亿美元在新的制造设施上(即基于极端紫外线光刻)，这些设施可能能够也可能不能满足所需的分辨率。对于硬盘驱动器，嵌段共聚光刻是唯一可行的制造纳米压印母版以制造所需存储密度(至少大于2太比特/英寸2)的位图案化介质的已知技术。这项研究还将极大地促进具有可控组成和分子结构的聚合物的气相沉积以及聚合物薄膜热力学和动力学的预测和定量模型的发展。

This grant provides funding to address fundamental and technological issues essential for the widespread implementation of directed self-assembly (DSA) in nanomanufacturing of device structures. Specifically, block copolymers, that self-assemble to form densely packed features with highly uniform dimensions and shapes in ordered arrays, will be directed to assemble on chemical pre-patterns defined using traditional lithographic processes, such as 193 nm immersion or electron beam lithography. Hence, the 20 to 40 nm resolution of traditional lithography will be reduced down to the 5 to 10 nm range by DSA. The principal activities of the proposed work include fabrication of ultrathin and high resolution chemically nanopatterned substrates to enable DSA at 10 nm feature size and below; development of strategies to deposit surface layers on top of self-assembling block copolymer films as a means to enable high-resolution assemblies; and all vapor-phase synthesis, deposition, and directed self-assembly of block copolymers. Novel and scalable processes for chemical vapor deposition of polymeric nanocoatings are a key to all activities, and the proposed effort represents a truly concerted computational and experimental approach, with design of materials and processes enabled by predictive molecular simulations.This research, which aims to establish a proven pathway to realize sub 10 nm resolution, and provide scaling down to 5 nm, has the potential to revolutionize nanolithography and nanomanufacturing. For the semiconductor industry, DSA may allow the manufacture of future generations of faster computer chips following Moore?s law without having to invest billions of dollars in new fabrication facilities (i.e. based on extreme ultra violet lithography) that may or may not be able to meet the required resolutions. For hard drives, block copolymer lithography is the only known technology that is feasible to fabricate nanoimprint masters to manufacture bit patterned media at the required storage densities (at least greater than 2 Terabit/inch2). The research will also substantially advance the state-of-the-art in vapor-phase deposition of polymers with controlled compositions and molecular architectures, and that of predictive and quantitative models for the thermodynamics and dynamics of polymer films.