SNM: Scaling Directed Self-Assembly of Block Copolymers for Sub 10 nm Manufacturing

该赠款提供资金，以解决基本和技术问题，这些问题对于在器件结构的纳米制造中广泛实施定向自组装（DSA）至关重要。具体地，自组装以形成具有高度均匀尺寸和形状的有序阵列的密集堆积特征的嵌段共聚物将被引导以组装在使用传统光刻工艺（诸如193 nm浸没或电子束光刻）限定的化学预图案上。因此，传统光刻的20至40 nm分辨率将通过DSA降低到5至10 nm范围。 拟议的工作的主要活动包括制造的纳米和高分辨率的化学纳米图案化基板，使DSA在10 nm及以下的特征尺寸;开发的策略，存款表面层的自组装嵌段共聚物膜的顶部作为一种手段，使高分辨率的组件;和所有的气相合成，沉积，和定向自组装的嵌段共聚物。用于聚合物纳米涂层的化学气相沉积的新颖和可扩展的工艺是所有活动的关键，并且所提出的努力代表了真正协调的计算和实验方法，通过预测性分子模拟实现材料和工艺的设计。这项研究旨在建立一种经过验证的途径来实现10 nm以下的分辨率，并提供缩小到5 nm的尺寸，有可能彻底改变纳米光刻和纳米制造。 对于半导体工业来说，DSA可能允许制造继摩尔？s定律，而不必投资数十亿美元在新的制造设施（即基于极紫外光刻），可能会或可能不会满足所需的分辨率。 对于硬盘驱动器，嵌段共聚物光刻是唯一已知的技术，其可用于制造纳米压印母版以制造所需存储密度（至少大于2太比特/英寸2）的位图案化介质。该研究还将大大推进具有受控组成和分子结构的聚合物气相沉积的最新技术，以及聚合物薄膜热力学和动力学的预测和定量模型。

This grant provides funding to address fundamental and technological issues essential for the widespread implementation of directed self-assembly (DSA) in nanomanufacturing of device structures. Specifically, block copolymers, that self-assemble to form densely packed features with highly uniform dimensions and shapes in ordered arrays, will be directed to assemble on chemical pre-patterns defined using traditional lithographic processes, such as 193 nm immersion or electron beam lithography. Hence, the 20 to 40 nm resolution of traditional lithography will be reduced down to the 5 to 10 nm range by DSA. The principal activities of the proposed work include fabrication of ultrathin and high resolution chemically nanopatterned substrates to enable DSA at 10 nm feature size and below; development of strategies to deposit surface layers on top of self-assembling block copolymer films as a means to enable high-resolution assemblies; and all vapor-phase synthesis, deposition, and directed self-assembly of block copolymers. Novel and scalable processes for chemical vapor deposition of polymeric nanocoatings are a key to all activities, and the proposed effort represents a truly concerted computational and experimental approach, with design of materials and processes enabled by predictive molecular simulations.This research, which aims to establish a proven pathway to realize sub 10 nm resolution, and provide scaling down to 5 nm, has the potential to revolutionize nanolithography and nanomanufacturing. For the semiconductor industry, DSA may allow the manufacture of future generations of faster computer chips following Moore?s law without having to invest billions of dollars in new fabrication facilities (i.e. based on extreme ultra violet lithography) that may or may not be able to meet the required resolutions. For hard drives, block copolymer lithography is the only known technology that is feasible to fabricate nanoimprint masters to manufacture bit patterned media at the required storage densities (at least greater than 2 Terabit/inch2). The research will also substantially advance the state-of-the-art in vapor-phase deposition of polymers with controlled compositions and molecular architectures, and that of predictive and quantitative models for the thermodynamics and dynamics of polymer films.