Ductile Regime Single Point Diamond Machining of Semiconductors: Mechanisms Exploration and Process Development

本研究项目的目标是：(1)利用微拉曼光谱研究Si， Ge, GaAs, InSb， CdTe以及其他半导体的加工碎屑和加工表面的相组成。(2)采用压痕和划痕试验代替更为复杂和昂贵的实际加工试验，预测和优化球墨加工条件。(3)根据获得的信息预测和优化单点金刚石车削条件。(4)对上述材料进行实际的单点金刚石车削，验证其表面质量和延展性去除切屑方式，以及其在无损伤和超平整加工表面方面的优势。(5)与目前的研磨抛光方法相比，量化硅片、GE和其他半导体制造工艺时间的减少。如果这项研究取得成功，将弥合材料科学理论与加工实践之间的差距，并将延性状态条件的选择和优化方法从“试错”试验转变为“预测-验证”试验。这将为脆性半导体提供一种快速、可靠的超精密加工方法，从而产生更好的表面质量和尺寸精度。用于识别延展性的微拉曼技术也将用于加工表面的质量控制。

9813257 Gogotsi The objectives of this research project are to: (1) Investigate the phase composition of machining debris and machined surfaces of Si, Ge, GaAs, InSb, CdTe and, eventually, other semiconductors using micro-Raman spectroscopy. (2) Use the indentation and scratch tests instead of much more complicated and expensive real machining experiments for prediction and optimization of the conditions of ductile machining. (3) Predict and optimize single-point diamond turning conditions based on the obtained information. (4) Perform actual single point diamond turning of above mentioned materials, verify surface quality and ductile regime chip removal mode, and its resulting advantages in terms of damage-free and super flat machined surfaces. (5) Quantify the reduction in manufacturing process time of silicon wafers, GE, and other semiconductors compared to current lapping-polishing methods. If successful, this research will bridge the gap between the materials science theory and practice of machining and change the approach to the selection and optimization of the ductile regime conditions from "trial-error" to "prediction-verification" tests. This will provide a fast and reliable ultra-precision machining method for brittle semiconductors, which will produce a better surface quality and dimensional accuracy. The same micro-Raman technique that is used for identification of the ductile regime will be used for quality control of machined surfaces.