Demonstration of Field Effect Transistor Operation Using Oxidized AIN as the Gate Insulator on Si Substrates

使用氧化 AIN 作为硅衬底上栅极绝缘体的场效应晶体管操作演示

• 批准号: 9872692
• 负责人: James Kolodzey
• 金额: $ 5.51万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-07-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9872692&HistoricalAwards=false
• 关键词: Demonstration; Field; Effect; Transistor; Operation

9872692 Kolodzey This proposal addresses semiconductor device issues to understand the electronic properties of a novel insulator, oxidized aluminum nitride, and the transistors made with it. This study is important because the PI found that the thermal oxidization of epitaxial aluminum nitride on Si substrates produces aluminum oxide (sapphire) having nearly ideal electronic properties. Using this aluminum oxide, the PI has made metal-insulator-semiconductor (MIS) capacitors which behave similarly to conventional structures based on silicon dioxide (SiO2). The PI would like to make transistors using aluminum oxide, and request the funding to enable a student to fabricate and test field effect transistors using oxidized aluminum nitride as the gate insulator. The motivation for this research is two-fold: to provide information on devices using a new materials system, and to evaluate aluminum oxide as the gate insulator in metal-oxide-semiconductor field effect transistors (MOSFETs), as a possible alternative to SiO2. To address these questions and to provide the data to support a proposal for a more comprehensive program, the PI will request funding for one year of research under the Small Grant for Exploratory Research (SGER) Program. The funds will be used for a graduate student, faculty time, travel, materials and supplies. The plan is to demonstrate transistor action and to enlist industrial support for longer term funding under the NSF GOALI program. ***

小行星9872692 该提案解决了半导体器件问题，以了解一种新型绝缘体，氧化氮化铝的电子特性，以及用它制成的晶体管。这项研究很重要，因为PI发现，硅衬底上的外延氮化铝的热氧化产生氧化铝（蓝宝石）具有接近理想的电子特性。 使用这种氧化铝，PI制造了金属-绝缘体-半导体（MIS）电容器，其表现类似于基于二氧化硅（SiO2）的传统结构。 PI希望使用氧化铝制造晶体管，并要求资助学生使用氧化氮化铝作为栅极绝缘体制造和测试场效应晶体管。 这项研究的动机是双重的：提供有关使用新材料系统的器件的信息，并评估氧化铝作为金属氧化物半导体场效应晶体管（MOSFET）中的栅极绝缘体，作为SiO2的可能替代品。 为了解决这些问题并提供数据以支持更全面的计划提案，PI将根据探索性研究小额赠款（SGER）计划申请一年的研究资金。 这些资金将用于研究生，教师时间，旅行，材料和用品。 该计划旨在展示晶体管的作用，并在NSF GOALI计划下争取行业支持以获得长期资金。 ***