SGER: The Fabrication of Biological Time Resolved Arrays of Chemical Energy Readers
SGER:化学能量读取器的生物时间分辨阵列的制造
基本信息
- 批准号:0129535
- 负责人:
- 金额:$ 3万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2001
- 资助国家:美国
- 起止时间:2001-09-01 至 2002-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
0129535KolodzeyThe PI proposes to evaluate the performance of a novel bio-chemical sensor based on theelectrochemical field effect in MOS-type transistor structures. He has fabricatedprototypes of this MOS sensor, and have found that they produced non-linearcurrent-voltage responses to DNA molecules in an aqueous solution. Calculations indicatethat the device should be highly sensitive to the electrochemical potential of biomolecules such as DNA and proteins. It should be capable of nanosecond response times fortime-resolved measurements. These preliminary results will be described briefly here andin more detail in the Motivation Section of this proposal.The operation of the sensor is based on the semiconductor surface field effect in MOSdevices in which the electrochemical potentials (Fermi levels) of bio-compounds influencethe electrical current flowing in a transistor-like device. The detected biomolecules arelocated within a Debye screening length of the gate insulator electrode. Calculationsindicate that the proposed field effect device may be sensitive to less than 110 moleculesper square micron of active sensor area. By reducing the active area to 100 nm square,which is within lithographic capabilities, the sensor may be able to detect the charge onone DNA molecule.The reason for the exploratory and high-risk status is that the PI has not yet performed a comparison of sensor responses with different types of DNA and other biomolecules. He has not yet measured the time resolved response. The sensitivity is unknown, and it is uncertain if the sensor can distinguish different concentrations and different types of DNA. For this SGER proposal, the PI wants to measure the sensor response with different types of DNA to determine its sensitivity and selectivity. The measurements will be calibrated with an optical fluorescence microscope. If it turns out that this bio-chemical sensor is a valuable instrument that can yield useful information on biomolecules, he plans to submit a full proposal for a comprehensive research program.A comprehensive proposal based on this sensor was submitted in November 2000 to theNanoscience NIRT program, but was unsuccessful. The reviewers stated that a weakness was the lack of sufficient chemical and biological data on sensor operation. In this SGER proposal, the PI requests the funds to support a student and travel to obtain measurements of the sensor for different DNA molecules and reference solutions. These results would be used to justify further research and large funding programs.
PI提出了一种基于mos型晶体管结构中电化学场效应的新型生化传感器的性能评估。他制作了这种MOS传感器的原型,并发现它们对水溶液中的DNA分子产生非线性电流-电压响应。计算表明,该装置应该对生物分子如DNA和蛋白质的电化学电位高度敏感。对于时间分辨的测量,它应该能够达到纳秒级的响应时间。这些初步结果将在这里简要描述,并在本提案的动机部分更详细地描述。传感器的工作是基于mos器件中的半导体表面场效应,其中生物化合物的电化学电位(费米能级)影响在晶体管状器件中流动的电流。检测到的生物分子重新定位在栅极绝缘体电极的德拜筛选长度内。计算表明,所提出的场效应器件可以对小于110分子每平方微米的有源传感器区域敏感。通过将有效面积减小到100nm平方,这在光刻能力范围内,传感器可能能够检测单个DNA分子上的电荷。处于探索性和高风险状态的原因是PI尚未对不同类型DNA和其他生物分子的传感器响应进行比较。他还没有测量时间分解反应。灵敏度是未知的,也不确定传感器是否能区分不同浓度和不同类型的DNA。对于这个SGER提案,PI希望测量不同类型DNA的传感器响应,以确定其灵敏度和选择性。测量结果将用光学荧光显微镜进行校准。如果这种生化传感器被证明是一种有价值的仪器,可以产生有关生物分子的有用信息,他计划提交一份全面研究计划的完整提案。2000年11月,一份基于该传感器的综合提案被提交给theNanoscience NIRT计划,但没有成功。审稿人指出,一个弱点是缺乏足够的关于传感器操作的化学和生物数据。在这个SGER提案中,PI要求资金支持一名学生和旅行,以获得不同DNA分子和参考溶液的传感器测量。这些结果将被用来证明进一步的研究和大型资助项目的合理性。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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James Kolodzey其他文献
Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy
低温分子束外延生长的 Sn 含量高达 31% 的 GeSn 合金的成分和应变对拉曼振动模式的影响
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Haochen Zhao;Guangyang Lin;Yuying Zhang;Suho Park;Ryan Hickey;Tuofu Zhama;Peng Cui;S. Sourav;James Kolodzey;Yuping Zeng - 通讯作者:
Yuping Zeng
James Kolodzey的其他文献
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{{ truncateString('James Kolodzey', 18)}}的其他基金
EAGER: High Power Terahertz Emitters Based on Doped Gallium Nitride
EAGER:基于掺杂氮化镓的高功率太赫兹发射器
- 批准号:
1306149 - 财政年份:2013
- 资助金额:
$ 3万 - 项目类别:
Standard Grant
Materials World Network: Terahertz Spectroscopy of Modulation Doped Si and SiGe Nanostructures
材料世界网:调制掺杂硅和硅锗纳米结构的太赫兹光谱
- 批准号:
0601920 - 财政年份:2006
- 资助金额:
$ 3万 - 项目类别:
Continuing Grant
SGER: An Investigation of Silicon Germanium Terahertz Sources
SGER:硅锗太赫兹源的研究
- 批准号:
0338159 - 财政年份:2003
- 资助金额:
$ 3万 - 项目类别:
Standard Grant
U.S.-France Cooperative Research: Towards Silicon-Based Unipolar Lasers
美法合作研究:迈向硅基单极激光器
- 批准号:
9815775 - 财政年份:1999
- 资助金额:
$ 3万 - 项目类别:
Standard Grant
Demonstration of Field Effect Transistor Operation Using Oxidized AIN as the Gate Insulator on Si Substrates
使用氧化 AIN 作为硅衬底上栅极绝缘体的场效应晶体管操作演示
- 批准号:
9872692 - 财政年份:1998
- 资助金额:
$ 3万 - 项目类别:
Standard Grant
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