SGER: An Investigation of Silicon Germanium Terahertz Sources

SGER:硅锗太赫兹源的研究

基本信息

  • 批准号:
    0338159
  • 负责人:
  • 金额:
    $ 5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2003
  • 资助国家:
    美国
  • 起止时间:
    2003-08-15 至 2004-07-31
  • 项目状态:
    已结题

项目摘要

Layers of boron doped and gallium doped Si and SiGe will be grown by molecular beam epitaxy on Si substrates. Device structures will be fabricated using photolithography combined with reactive ion etching and metal evaporation. Their electroluminescent properties will be determined as a function of dopant type and concentration. Electrical and optical device modeling will be used to help interpret the observations. Electroluminescence measurements will be made on electrically contacted devices mounted in a cryostat in a Fourier Transform Infrared Spectrometer that operates in the THz range. In particular, the emission intensity and spectrum will be determined versus the applied current and temperature. Based on the results, the possibility of designing a TeraHertz laser based on dopant transitions will be assessed in terms of the radiative gain and losses from doped cavity resonators.The proposed research should be considered exploratory and high risk because the excitation mechanism of the dopant states and their radiative efficiency is not well understood, and will be explored during this project. The potential impact of this research concerns a TeraHertz emitting device with a simple structure that is compatible with Si integrated circuitry for potential low cost and widespread use. Compact TeraHertz emitters that are integrated with computer chips would have applications in: chemical and biological sensing; medical diagnostics, and high bandwidth communications. An SGER grant would be a suitable means of supporting the work because the results would indicate whether additional research is justified, and may be used to solicit additional funding.Education and outreach activities will be carried out in combination with these research activities. These will include the participation in research of a graduate student, the incorporation of research findings into teaching, and the continued development of a series of local school outreach activities. An interactive web site (http://www.ece.udel.edu/~kolodzey/terahertztools/terahertztools.htm) will be designed suitable for senior high school or freshman college students, which will illustrate the properties of the TeraHertz frequencies, and allow students to explore terahertz absorption and reflectivity phenomena.
采用分子束外延的方法在硅衬底上生长掺杂硼和掺杂镓的硅和硅锗层。器件结构将使用光刻结合反应离子蚀刻和金属蒸发来制造。它们的电致发光性能将作为掺杂类型和浓度的函数来确定。电气和光学设备建模将用于帮助解释观测结果。电致发光测量将在安装在低温恒温器中的傅立叶变换红外光谱仪的电接触设备上进行,该光谱仪在太赫兹范围内工作。特别是,发射强度和光谱将根据所施加的电流和温度来确定。在此基础上,根据掺杂腔腔谐振器的辐射增益和损失,对设计基于掺杂跃迁的太赫兹激光器的可能性进行了评估。由于掺杂态的激发机制及其辐射效率尚不清楚,本课题将对其进行探索性研究和高风险研究。这项研究的潜在影响涉及一种结构简单的太赫兹发射器件,该器件与硅集成电路兼容,具有潜在的低成本和广泛应用。与计算机芯片集成的紧凑太赫兹发射器将应用于:化学和生物传感;医疗诊断和高带宽通信。SGER拨款将是支持这项工作的合适手段,因为结果将表明是否有必要进行额外的研究,并可用于征求额外的资金。教育和外联活动将与这些研究活动结合进行。这些措施包括研究生参与研究,将研究成果纳入教学,以及继续发展一系列当地学校的外展活动。将设计一个互动网站(http://www.ece.udel.edu/~kolodzey/terahertztools/terahertztools.htm),适合高中或大学一年级的学生,该网站将说明太赫兹频率的特性,并允许学生探索太赫兹吸收和反射现象。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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James Kolodzey其他文献

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy
低温分子束外延生长的 Sn 含量高达 31% 的 GeSn 合金的成分和应变对拉曼振动模式的影响
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Haochen Zhao;Guangyang Lin;Yuying Zhang;Suho Park;Ryan Hickey;Tuofu Zhama;Peng Cui;S. Sourav;James Kolodzey;Yuping Zeng
  • 通讯作者:
    Yuping Zeng

James Kolodzey的其他文献

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{{ truncateString('James Kolodzey', 18)}}的其他基金

EAGER: High Power Terahertz Emitters Based on Doped Gallium Nitride
EAGER:基于掺杂氮化镓的高功率太赫兹发射器
  • 批准号:
    1306149
  • 财政年份:
    2013
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Materials World Network: Terahertz Spectroscopy of Modulation Doped Si and SiGe Nanostructures
材料世界网:调制掺杂硅和硅锗纳米结构的太赫兹光谱
  • 批准号:
    0601920
  • 财政年份:
    2006
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
SGER: The Fabrication of Biological Time Resolved Arrays of Chemical Energy Readers
SGER:化学能量读取器的生物时间分辨阵列的制造
  • 批准号:
    0129535
  • 财政年份:
    2001
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
U.S.-France Cooperative Research: Towards Silicon-Based Unipolar Lasers
美法合作研究:迈向硅基单极激光器
  • 批准号:
    9815775
  • 财政年份:
    1999
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Demonstration of Field Effect Transistor Operation Using Oxidized AIN as the Gate Insulator on Si Substrates
使用氧化 AIN 作为硅衬底上栅极绝缘体的场效应晶体管操作演示
  • 批准号:
    9872692
  • 财政年份:
    1998
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant

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