EAGER: High Power Terahertz Emitters Based on Doped Gallium Nitride

EAGER：基于掺杂氮化镓的高功率太赫兹发射器

• 批准号: 1306149
• 负责人: James Kolodzey
• 金额: $ 12万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1306149&HistoricalAwards=false
• 关键词: EAGER; Power; Terahertz; Emitters; Based

The objective of this program is to investigate the properties of high power terahertz emitting devices based on impurity center transitions in the wide bandgap semiconductor, gallium nitride. Using doped wafers from colleagues at universities and industry, terahertz emitters will be fabricated, and a series of electrical and optical experiments will determine their characteristics and limitations, and provide the data to optimize their performance.The intellectual merit is that terahertz emission is an important capability, and gallium nitride is an important semiconductor that may enable higher performance than previous emitters based on other materials and other mechanisms. The reason is that gallium nitride, as a wide bandgap semiconductor, can accommodate high power dissipation, and the dopants and impurities have deep energy levels that are perfectly suitable for terahertz-producing transitions. The proposed emission mechanism was effective for other semiconductors, but is not well understood in gallium nitride, so this is an exploratory project. The broader impacts are that the availability of compact, high performance, low cost terahertz emitters will be transformative for global applications from medical diagnostics to pollution detection. This research project will add to fundamental knowledge on devices and materials, and will feature the interaction of students with university and industrial researchers. Lectures on semiconductor optoelectronics will be presented at local schools.

本计画的目的是研究以氮化镓为宽带隙半导体之杂质中心跃迁为基础的高功率太赫兹辐射元件的特性。 使用来自大学和工业界的同事的掺杂晶片，将制造太赫兹发射器，一系列的电学和光学实验将确定它们的特性和局限性，并提供数据来优化它们的性能。智力上的优点是太赫兹发射是一种重要的能力，并且氮化镓是一种重要的半导体，其可以实现比基于其它材料和其它机制的先前发射器更高的性能。 原因是氮化镓作为一种宽带隙半导体，可以适应高功耗，并且掺杂剂和杂质具有非常适合产生太赫兹跃迁的深能级。 提出的发射机制对其他半导体有效，但在氮化镓中还没有很好的理解，所以这是一个探索性的项目。 更广泛的影响是，紧凑，高性能，低成本的太赫兹发射器的可用性将为从医疗诊断到污染检测的全球应用带来变革。 该研究项目将增加设备和材料的基础知识，并将以学生与大学和工业研究人员的互动为特色。 有关半导体光电子学的讲座将在当地学校举行。