SGER: Assembled Nanotubes as High Sensitivity Resists

9902944 gonsals电子投影光刻，在某种程度上，x射线光刻都受到电子接近效应的影响，这对集成电路的关键尺寸是非常有害的，无论机器多么复杂。基于无机纳米管-聚合物复合材料（NANOCOMPOSITES）的各向异性电阻的使用，提出了消除电子接近效应并获得亚100纳米分辨率的新概念。最初的解决方案是通过迫使二次电子遵循纳米复合材料柱状结构施加的垂直路径来强烈减少二次电子的横向散射。纳米复合材料的发展可分为三个相互关联的阶段：第一阶段：化学合成一系列高对比度、高灵敏度的抗蚀剂（该项目的核心）。研究了用液晶法加工硅酸盐-金属-表面活性剂中间相，然后将无机组分聚合，以生产有序的有机-无机抗蚀剂。纳米复合材料将基于金属氧化物/液晶核/纳米颗粒制备，具有功能化表面，PMMA低聚物可以接枝并设计成3D晶体，如非团聚结构。介观结构的排列也将在流体介质中进行检查，这样有机-无机抗蚀剂可以旋转到晶圆上，磁排列，然后在干燥后按所需的方向冷冻，即在电子束的方向上。后者满足了通过迫使二次电子沿着各向异性微结构施加的垂直路径而强烈降低二次电子横向散射的标准。第二阶段：抗蚀剂的表征和辐射-纳米复合材料相互作用的基础研究。这些材料将通过热分析进行表征，即DSC和TGA，以确定其Tg和热稳定性，GPC的分子量；通过剥离和起泡测试的附着力；粘度学流变学；用旋涂法形成薄膜，用椭偏法和轮廓法测定薄膜厚度。利用红外光谱法分析抗蚀剂材料的耐酸碱性能。SEM， TEM（包括HRTEM）， AFM/STM将有助于深入了解无机-有机纳米复合材料的三维结构。基本的辐射效应将基本上由纳米复合材料在可变温度（LN2到RT）和压力下的原位FTIR光谱分析来完成。阶段3：抗蚀剂的高分辨率光刻测试（与2同时进行）。用HRSEM的精细聚焦电子束绘制一系列平行线（类似于光栅），通过减少抗蚀剂中的距离来分隔，将给出分辨率的估计，从而估计抗蚀剂中的接近效应。然后用平行的宽电子束（或x射线）淹没掩模来测试抗蚀剂。微电子工业面临的一个主要挑战是大规模生产临界尺寸低于100纳米的集成电路。所提出的抗蚀剂的一个明显优势是，它可以使电子投影光刻和x射线光刻容易地获得低于100纳米的分辨率，而无需修改现有的工业机器，这可以大大节省开发时间和投资。

9902944GonsalvesElectron projection lithography and, to some extent, X-Ray lithography suffer from electron proximity effects, which is highly detrimental to the critical dimension in integrated cirduits no matter how sophisticated the machines are. The proposed new concept to virtually eliminate the electron proximity effects and to attain sub-100 nm resolution relies on the use of anisotropic resists based on inorganic nanotubes-polymer composites (NANOCOMPOSITES). The original solution is to strongly reduce the lateral scattering of the secondary electrons by forcing them to follow vertical paths imposed by the columnated microstructure of the nanocomposite. Three interrelated phases in the nanocomposite development can be distinguished: PHASE 1: the chemical synthesis of a series of high contrast, high sensitivity resists (core of the project). Processing silicate-metal-surfactant mesophases by established liquid crystal mehtods and then polymerizing the inorganic component will be investigated for producing ordered organic-inorganic resists. Nanocomposites will be prepared based on metal oxide/liquid crystal cores/nanoparticles with functionalized sufaces onto which PMMA oligomers can be grafted and engineered into 3D crystal like non-agglomerated structures. The alignment of the mesoscopic structures will also be examined in fluid media, such that the organic-inorganic resists can be spun on to a wafer, magnetically aligned and then frozen in the desired orientation after drying, i.e., in the direction of the e-beam. The latter meets the criterion for strongly reducing the lateral scattering of secondary electrons by forcing them to follow veritcal paths imposed by the columnated microstructure of the anisotropic resis. PHASE 2: resist characterization and fundamental study of radiation-nanocomposite interaction. These materials will be characterized via thermal analysis, viz DSC and TGA for detemining their Tg and thermal stability, molecular weight by GPC; adhesion by peel and blister tests; rheology by viscometry; film formation by spin-coating and film thickness by ellopsometry and profilometry. The stability of the resist materials will be analyzed for their resistance to acids and bases by IR spectroscopy. SEM, TEM including HRTEM, AFM/STM will contribute to invaluable insight into the 3D structures of the inorganic-organic nanocomposite materials. Fundamental radiation effects will be essentially followed by in situ FTIR spectroscopy of the nanocomposite maintained at variable Temperatures (LN2 to RT) and pressures. PHASE 3: high resolution lithographic tests of the resists (Concurrent with 2). Drawing a series of parallel lines (akin to a grating) separated by decreasing distances in the resist with a finely focused e-beam of a HRSEM will give an estimation of the resolution and, thus of the proximity effects in the resist. Then a parallel broad e-beam (or X-Ray) flooding a mask will be used to test the resist.A major challenge facing the microelectronic industry is the mass production of integrated circuits having sub-100 nm critical dimentsions. A clear-cut advantage of the proposed resist is that it might enable sub- 100 nm resolution to be readily attained by electron projection lithography and X-Rays lithography without modifying the existing industrial machines, which considerably could save development time and investment.