SGER: Assembled Nanotubes as High Sensitivity Resists

SGER：组装纳米管作为高灵敏度抗蚀剂

• 批准号: 9902944
• 负责人: Kenneth Gonsalves
• 金额: $ 7.03万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-02-15 至 2000-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9902944&HistoricalAwards=false
• 关键词: SGER; Assembled; Nanotubes; Sensitivity; Resists

9902944GonsalvesElectron projection lithography and, to some extent, X-Ray lithography suffer from electron proximity effects, which is highly detrimental to the critical dimension in integrated cirduits no matter how sophisticated the machines are. The proposed new concept to virtually eliminate the electron proximity effects and to attain sub-100 nm resolution relies on the use of anisotropic resists based on inorganic nanotubes-polymer composites (NANOCOMPOSITES). The original solution is to strongly reduce the lateral scattering of the secondary electrons by forcing them to follow vertical paths imposed by the columnated microstructure of the nanocomposite. Three interrelated phases in the nanocomposite development can be distinguished: PHASE 1: the chemical synthesis of a series of high contrast, high sensitivity resists (core of the project). Processing silicate-metal-surfactant mesophases by established liquid crystal mehtods and then polymerizing the inorganic component will be investigated for producing ordered organic-inorganic resists. Nanocomposites will be prepared based on metal oxide/liquid crystal cores/nanoparticles with functionalized sufaces onto which PMMA oligomers can be grafted and engineered into 3D crystal like non-agglomerated structures. The alignment of the mesoscopic structures will also be examined in fluid media, such that the organic-inorganic resists can be spun on to a wafer, magnetically aligned and then frozen in the desired orientation after drying, i.e., in the direction of the e-beam. The latter meets the criterion for strongly reducing the lateral scattering of secondary electrons by forcing them to follow veritcal paths imposed by the columnated microstructure of the anisotropic resis. PHASE 2: resist characterization and fundamental study of radiation-nanocomposite interaction. These materials will be characterized via thermal analysis, viz DSC and TGA for detemining their Tg and thermal stability, molecular weight by GPC; adhesion by peel and blister tests; rheology by viscometry; film formation by spin-coating and film thickness by ellopsometry and profilometry. The stability of the resist materials will be analyzed for their resistance to acids and bases by IR spectroscopy. SEM, TEM including HRTEM, AFM/STM will contribute to invaluable insight into the 3D structures of the inorganic-organic nanocomposite materials. Fundamental radiation effects will be essentially followed by in situ FTIR spectroscopy of the nanocomposite maintained at variable Temperatures (LN2 to RT) and pressures. PHASE 3: high resolution lithographic tests of the resists (Concurrent with 2). Drawing a series of parallel lines (akin to a grating) separated by decreasing distances in the resist with a finely focused e-beam of a HRSEM will give an estimation of the resolution and, thus of the proximity effects in the resist. Then a parallel broad e-beam (or X-Ray) flooding a mask will be used to test the resist.A major challenge facing the microelectronic industry is the mass production of integrated circuits having sub-100 nm critical dimentsions. A clear-cut advantage of the proposed resist is that it might enable sub- 100 nm resolution to be readily attained by electron projection lithography and X-Rays lithography without modifying the existing industrial machines, which considerably could save development time and investment.

9902944GonsalvesElectron投影光刻和在某种程度上X射线光刻都受到电子邻近效应的影响，这对集成电路中的临界尺寸是非常有害的，无论机器多么复杂。 所提出的新概念，几乎消除电子邻近效应，并达到100 nm以下的分辨率依赖于使用各向异性抗蚀剂的基础上无机纳米管聚合物复合材料（纳米复合材料）。 最初的解决方案是通过迫使二次电子遵循纳米复合材料的柱状微观结构所施加的垂直路径来强烈减少二次电子的横向散射。 纳米复合材料的开发分为三个相互关联的阶段：第一阶段：化学合成一系列高对比度、高灵敏度的抗蚀剂（项目的核心）。 本研究将探讨以液晶方法处理矽酸盐-金属-表面活性剂中间相，再聚合无机组份，以产生有序的有机-无机光阻。 纳米复合材料将基于具有功能化表面的金属氧化物/液晶核/纳米颗粒制备，PMMA低聚物可以接枝到该功能化表面上并设计成3D晶体状非团聚结构。 还将在流体介质中检查介观结构的对准，使得有机-无机抗蚀剂可以旋涂到晶片上，磁性对准，然后在干燥后以期望的取向冷冻，即，在电子束的方向。 后者满足通过迫使二次电子遵循由各向异性电阻的柱状微观结构施加的垂直路径来强烈减少二次电子的横向散射的标准。 第二阶段：抗蚀剂特性和辐射纳米复合材料相互作用的基础研究。 这些材料将通过热分析来表征，即DSC和TGA用于确定它们的Tg和热稳定性，通过GPC测定分子量;通过剥离和起泡试验测定粘合性;通过粘度计测定流变性;通过旋涂法测定成膜性，以及通过椭圆偏振仪和轮廓测定法测定膜厚度。 抗蚀剂材料的稳定性将通过红外光谱分析其对酸和碱的耐受性。 SEM、TEM（包括HRTEM）、AFM/STM将有助于深入了解无机-有机纳米复合材料的三维结构。 基本的辐射效应将基本上遵循原位FTIR光谱的纳米复合材料保持在可变的温度（液氮2 RT）和压力。 阶段3：抗蚀剂的高分辨率光刻测试（与2同时进行）。 用HRSEM的精细聚焦电子束在抗蚀剂中绘制一系列由减小的距离分开的平行线（类似于光栅）将给出分辨率的估计，从而给出抗蚀剂中的邻近效应的估计。 然后用平行的宽电子束（或X射线）照射掩模来测试抗蚀剂。微电子工业面临的一个主要挑战是大规模生产具有亚100 nm关键尺寸的集成电路。 所提出的抗蚀剂的一个明显的优点是，它可以使亚100 nm的分辨率，可以很容易地通过电子投影光刻和X射线光刻获得，而无需修改现有的工业机器，这可以大大节省开发时间和投资。