SGER: Demonstration of Optical Microcavities in III-N Semiconductors

9909901 Anderson这是一项要求考虑授予探索性研究小额赠款(SGER)的提案。该提案描述了一项为期一年的活动，在这项活动中，PI将对宽禁带III-氮化物半导体制造的微腔的自发辐射控制和增强进行调查。由于团簇组成和尺寸的随机分布，高氮化物(如InGaN)的外延生长本质上表现为团簇生长，导致发射光谱展宽。此外，状态填充可能发生在这样的小集群中。在其他材料系统中，如砷化镓，微腔中的自发辐射速率也有所提高。该提案旨在演示III-氮化物系统中的微腔，以增强许多器件的自发辐射。*

9909901AndersonThis is a proposal requesting consideration for a Small Grant for Exploratory Research (SGER) award. The proposal describes a one-year activity in which the PI will conduct an investigation on spontaneous emission control and enhancement in microcavities fabricated from wide bandgap III-Nitride semiconductors. The nature of the epitaxial growth of the HI-Nitride such as InGaN exhibited cluster growths that caused broadening of the emission spectrum due to random distribution of cluster composition and dimensions. In addition, state filling can occur in such small clusters. Enhanced spontaneous emission rate in microcavities has been shown in other material systems such as GaAs. The proposal is aimed at demonstrations of microcavities in III-Nitride system for the enhancement of the spontaneous emission for many device applications.***