SGER: Demonstration of Optical Microcavities in III-N Semiconductors

9909901 AndersonThis是一份申请探索性研究小额补助金（SGER）的提案。 该提案描述了一项为期一年的活动，其中PI将对宽带隙III族氮化物半导体制造的微腔中的自发辐射控制和增强进行调查。 HI-氮化物如InGaN的外延生长的性质表现出簇生长，由于簇组成和尺寸的随机分布，簇生长导致发射光谱的加宽。 此外，状态填充可以发生在这样的小集群中。 在其他材料系统中，如GaAs，微腔中的增强自发辐射率已被证明。 该提案旨在演示III族氮化物系统中的微腔，以增强许多器件应用的自发辐射。

9909901AndersonThis is a proposal requesting consideration for a Small Grant for Exploratory Research (SGER) award. The proposal describes a one-year activity in which the PI will conduct an investigation on spontaneous emission control and enhancement in microcavities fabricated from wide bandgap III-Nitride semiconductors. The nature of the epitaxial growth of the HI-Nitride such as InGaN exhibited cluster growths that caused broadening of the emission spectrum due to random distribution of cluster composition and dimensions. In addition, state filling can occur in such small clusters. Enhanced spontaneous emission rate in microcavities has been shown in other material systems such as GaAs. The proposal is aimed at demonstrations of microcavities in III-Nitride system for the enhancement of the spontaneous emission for many device applications.***