Resonant Tunneling Injection Lasers

谐振隧道注入激光器

• 批准号: 9818362
• 负责人: Neal Anderson
• 金额: $ 27.74万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-05-01 至 2003-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9818362&HistoricalAwards=false
• 关键词: Resonant; Tunneling; Injection; Lasers

The proposed research is to investigate resonant tunneling injection lasers made of GaAs- and InP-based III-V semiconductors emitting at various wavelengths from visible to near IR region. The PI has recently made the resonant tunneling lasers that showed for the first time direct evidence for achieving population inversion through the tunneling injection mechanism at 77K. The proposed work is to optimize the device design to maximize the tunneling current at room temperature, and to demonstrate a high modulation frequency of this device up to 90GHz, compared to 30GHz for the conventional quantum well lasers.

本研究旨在探讨以砷化镓及铟磷为基础的三-五族半导体所制成的共振隧穿注入式雷射，其发射波长范围从可见光至近红外。PI最近制造了共振隧穿激光器，首次显示了在77 K下通过隧穿注入机制实现粒子数反转的直接证据。 所提出的工作是优化器件设计，以最大限度地提高室温下的隧穿电流，并证明该器件的高调制频率高达90 GHz，而传统量子阱激光器的调制频率为30 GHz。