SGER: Unipolar Avalanche Multiplication in III-V Multiple Quantum Wells

对II-V多量子阱(MQW)半导体结构中单极雪崩倍增进行了全面的理论研究。我们将首先对量子阱中的带内雪崩过程进行描述，我们预计这将是现有的最完整的描述。然后，这个模型将被应用于各种(大多数迄今尚未探索的)III-V量子井系统中的雪崩倍增的研究，包括包含应变层的结构。基于我们的模型，雪崩光电二极管的特性将最终得到理论上的预测，基于我们的模型，它有望表现出高增益和/或在非常理想的波长下工作。

A comprehensive theoretical investigation of unipolar avalanche multiplication in II-V multiple-quantum- well (MQW) semiconductor structures is proposed. A description of intraband avalanche processes in quantum wells, which we expect to be the most complete such description available, will first be developed. This model will then be applied to the study of avalanche multiplication in a variety of (mostly hitherto unexplored) III-V quantum-well systems, including structures which incorporate strained layers. Theoretical predictions will finally be obtained for characteristics of avalanche photodiodes utilizing MQW's which, based upon our model, are expected to exhibit high gains and/or operation at highly desirable wavelengths.