SGER: Unipolar Avalanche Multiplication in III-V Multiple Quantum Wells

单极子的综合理论研究 II-V多量子雪崩倍增 阱（MQW）半导体结构。 对带内雪崩过程的描述 量子威尔斯，我们预计这将是最 完整的描述，将首先是 开发 然后将该模型应用于 雪崩倍增研究 （迄今为止大部分尚未探索）III-V量子阱 系统，包括包含 应变层 理论预测最终将是 获得雪崩光电二极管的特性 利用MQW，根据我们的模型， 预期在以下条件下表现出高增益和/或操作： 非常理想的波长。

A comprehensive theoretical investigation of unipolar avalanche multiplication in II-V multiple-quantum- well (MQW) semiconductor structures is proposed. A description of intraband avalanche processes in quantum wells, which we expect to be the most complete such description available, will first be developed. This model will then be applied to the study of avalanche multiplication in a variety of (mostly hitherto unexplored) III-V quantum-well systems, including structures which incorporate strained layers. Theoretical predictions will finally be obtained for characteristics of avalanche photodiodes utilizing MQW's which, based upon our model, are expected to exhibit high gains and/or operation at highly desirable wavelengths.