Tensile-Strained Semiconductor Quantum-Well Lasers

点击翻译按钮获取中文摘要

9302883 Anderson The purpose of this project is the comprehensive experimental and theoretical examination of tensile-strained quantum-well-heterostructure lasers. Emphasis will be on the systematic identification of physical mechanisms responsible for the significant performance improvements recently observed in these types of lasers, and application of this information to high-performance laser design. Sets of strained-layer laser samples designed to elucidate trends in lasing properties with variations in specific quantum-well with the help of a detailed model of strained-layer lasers to be developed as part of this work. Investigations of the effects of externally applied compressive and tensile uniaxial stresses will be included. It is important that these studies will encompass wide ranges of well widths and compositions, thus spanning the range of band structure configurations available in tensile-strained quantum wells, and will emphasize careful isolation of various materials, strain, and quantum confinement effects through a combination of theoretical and direct experimental means. Finally, the information gained form these studies will be applied to the design, fabrication, and testing of optimized low-threshold tensile-strained lasers and new structures with unique tensile-strained active regions. Specific focus will be on InxGa1-xAs-InP and GaAsy-1-AlxGa1-xAs lasers. ***