Tensile-Strained Semiconductor Quantum-Well Lasers

拉伸应变半导体量子阱激光器

• 批准号: 9302883
• 负责人: Neal Anderson
• 金额: $ 27.73万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-15 至 1997-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9302883&HistoricalAwards=false
• 关键词: Tensile; Strained; Semiconductor; Quantum; Well

9302883 Anderson The purpose of this project is the comprehensive experimental and theoretical examination of tensile-strained quantum-well-heterostructure lasers. Emphasis will be on the systematic identification of physical mechanisms responsible for the significant performance improvements recently observed in these types of lasers, and application of this information to high-performance laser design. Sets of strained-layer laser samples designed to elucidate trends in lasing properties with variations in specific quantum-well with the help of a detailed model of strained-layer lasers to be developed as part of this work. Investigations of the effects of externally applied compressive and tensile uniaxial stresses will be included. It is important that these studies will encompass wide ranges of well widths and compositions, thus spanning the range of band structure configurations available in tensile-strained quantum wells, and will emphasize careful isolation of various materials, strain, and quantum confinement effects through a combination of theoretical and direct experimental means. Finally, the information gained form these studies will be applied to the design, fabrication, and testing of optimized low-threshold tensile-strained lasers and new structures with unique tensile-strained active regions. Specific focus will be on InxGa1-xAs-InP and GaAsy-1-AlxGa1-xAs lasers. ***

9302883安德森本项目的目的是全面的实验和理论检查的张力应变量子阱异质结构激光器。 重点是系统地识别最近在这些类型的激光器中观察到的显着性能改进的物理机制，以及将这些信息应用于高性能激光器设计。 应变层激光器样品集，旨在借助作为本工作一部分开发的应变层激光器详细模型，阐明特定量子阱中激光特性变化的趋势。 将包括外部施加的压缩和拉伸单轴应力的影响的调查。 重要的是，这些研究将包括宽范围的阱宽和组成，从而跨越范围内的能带结构配置可在拉伸应变量子威尔斯，并强调通过理论和直接实验手段相结合的各种材料，应变和量子限制效应的仔细隔离。 最后，从这些研究中获得的信息将被应用到优化的低阈值张应变激光器和具有独特的张应变有源区的新结构的设计，制造和测试。 具体重点将放在InxGa 1-xAs-InP和GaAsy-1-AlxGa 1-xAs激光器上。 ***