Short Wavelength Semiconductor Injection Lasers Based on III-V Nitrides

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9414510 Anderson This proposal describes a three-year research plan directed toward the experimental demonstration of GaN-based short-wavelength semiconductor injection lasers and the investigation of several key scientific and technological issues related to laser applications of the III-V nitrides. Strong initial emphasis will be placed on the demonstration of A1GaN/GaN/InGaN vertical-cavity surface- emitting laser (VCSEL) structures grown on 6H-SiC substrates, although a broad range of material and device design issues directly relevant to GaN-based heterostructure lasers and other devices will be investigated throughout the course of the project. Theoretical and experimental work will encompass growth and characterization of GaN, InGaN, and A1GaN epilayers and heterostructures, heterostructure modeling, and VCSEL laser modeling, design, fabrication, and characterization. Epitaxial growth, structural characterization, and electrical characterization will be carried out by researchers at Advanced Technology Materials, Inc. (ATMI) of Danbury, CT, who are currently involved in the development of GaN-based semiconductors and will be full collaborators on this project. This proposal is being submitted for consideration as an Industry-University Cooperative Research Project (IUCRP) under the NSF's Grant Opportunities for Academic Liaisons with Industry (GOALI) program. ***