Short Wavelength Semiconductor Injection Lasers Based on III-V Nitrides

基于 III-V 族氮化物的短波长半导体注入激光器

• 批准号: 9414510
• 负责人: Neal Anderson
• 金额: $ 23.29万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-15 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9414510&HistoricalAwards=false
• 关键词: Short; Wavelength; Semiconductor; Injection; Lasers

9414510 Anderson This proposal describes a three-year research plan directed toward the experimental demonstration of GaN-based short-wavelength semiconductor injection lasers and the investigation of several key scientific and technological issues related to laser applications of the III-V nitrides. Strong initial emphasis will be placed on the demonstration of A1GaN/GaN/InGaN vertical-cavity surface- emitting laser (VCSEL) structures grown on 6H-SiC substrates, although a broad range of material and device design issues directly relevant to GaN-based heterostructure lasers and other devices will be investigated throughout the course of the project. Theoretical and experimental work will encompass growth and characterization of GaN, InGaN, and A1GaN epilayers and heterostructures, heterostructure modeling, and VCSEL laser modeling, design, fabrication, and characterization. Epitaxial growth, structural characterization, and electrical characterization will be carried out by researchers at Advanced Technology Materials, Inc. (ATMI) of Danbury, CT, who are currently involved in the development of GaN-based semiconductors and will be full collaborators on this project. This proposal is being submitted for consideration as an Industry-University Cooperative Research Project (IUCRP) under the NSF's Grant Opportunities for Academic Liaisons with Industry (GOALI) program. ***

9414510 Anderson 该提案描述了一项为期三年的研究计划，旨在进行基于 GaN 的短波长半导体注入激光器的实验演示，并研究与 III-V 族氮化物激光应用相关的几个关键科学和技术问题。 最初的重点将放在展示在 6H-SiC 衬底上生长的 A1GaN/GaN/InGaN 垂直腔表面发射激光器 (VCSEL) 结构，尽管在整个项目过程中将研究与 GaN 基异质结构激光器和其他器件直接相关的广泛材料和器件设计问题。 理论和实验工作将包括 GaN、InGaN 和 AlGaN 外延层和异质结构的生长和表征、异质结构建模以及 VCSEL 激光建模、设计、制造和表征。 外延生长、结构表征和电气表征将由康涅狄格州丹伯里先进技术材料公司 (ATMI) 的研究人员进行，他们目前正在参与 GaN 基半导体的开发，并将成为该项目的全面合作者。 该提案作为 NSF 工业界学术联络资助机会 (GOALI) 计划下的产学合作研究项目 (IUCRP) 提交审议。 ***