Fundamental Studies of Thermal Plasma Chemical Vapor Deposition
Fundamental Studies of Thermal Plasma Chemical Vapor Deposition
批准号:
9910718
负责人:
Steven Girshick
金额:
$41.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-02-01 至 2004-07-31
中文摘要
这是热等离子体化学气相沉积的基础研究。(TPCVD)的目标是将TPCVD开发为用于高质量硬质膜和涂层的高速沉积的稳健工艺。 在1托至1个大气压的压力下的电感耦合射频等离子体用于沉积碳化硼和碳化硅的存款膜。 反应物是适当的氯化物蒸汽(硼氢化物或四氯化硅)和甲烷,注入氩-氢等离子体。 薄膜的特征在于几个异位技术,以确定元素组成,结晶度,形态,化学键,硬度和相关的机械性能。 薄膜的生长速率和性质与操作条件、表面温度和与生长表面相邻的流体边界层的化学性质有关。 分子束质谱法(MBMS)是用来获得在线测量的气相物质的摩尔分数在沉积过程中,这种技术可以提供绝对测量的摩尔分数的所有物种存在以上的检测限(ppm)的光谱仪。 利用MBMS测量技术建立了生长表面化学反应边界层的数值模型并进行了测试。 两名研究生正在接受涉及传热,等离子体科学,化学和材料科学的先进实验和计算方法的跨学科培训。 此外,一个新的诊断(MBMS)等离子体沉积研究的发展。
英文摘要
Abstract-GirshickThis is a fundamental study of thermal plasma chemical vapor deposition. (TPCVD) with the objective of developing TPCVD as a robust process for the high-rate deposition of high-quality hard films and coatings. An inductively coupled radio-frequency plasma at pressures of 1 Torr to 1 atmosphere is used to deposit films of boron carbide and silicon carbide. Reactants are the appropriate chloride vapor (boron trichloride or silicon tetrachloride) and methane, injected into an argon-hydrogen plasma. Films are characterized by several ex-situ techniques to determine elemental composition, crystallinity, morphology, chemical bonding, hardness and related mechanical properties. Film growth rates and properties are related to operating conditions, surface temperature, and the chemistry of the fluid boundary layer adjacent to the growth surface. Molecular-beam mass spectrometry (MBMS) is used to obtain on-line measurements of mole fractions of gas-phase species during deposition; this technique can provide absolute measurements of mole fraction for all species present above the detection limit (ppm) of the spectrometer. Numerical models of the chemically reacting boundary layer at the growth surface are developed and tested using MBMS measurementsThis topic is potentially a major enabling technology for production of coatings resistant to abrasion and chemical attack. Two graduate students are receiving interdisciplinary training in advanced experimental and computational methods involving heat transfer, plasma science, chemistry, and materials science. In addition, a new diagnostic (MBMS) for plasma deposition studies is developed.
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Collaborative Research: CDI-Type II: Cyber-Enabled Studies of Complexity in Nanodusty Plasmas
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批准号:1124752
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项目类别:Standard Grant
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资助金额:$138.92万
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财政年份:2011
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负责人:Steven Girshick
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依托单位:
Magnetic/Plasmonic Nanoparticles for Cancer Theranostics
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批准号:1066343
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2011
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负责人:Steven Girshick
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依托单位:
Modeling Nanodusty Plasmas
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批准号:0756315
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项目类别:Standard Grant
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资助金额:$25.67万
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财政年份:2008
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负责人:Steven Girshick
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依托单位:
Fundamental Studies of Photo-Assisted Chemical Vapor Deposition on Aerosol Nanoparticles
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批准号:0730184
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2007
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负责人:Steven Girshick
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依托单位:
NIRT: Manufacturing with Nanoparticle Sprays and Beams
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批准号:0506748
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项目类别:Standard Grant
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资助金额:$120.0万
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财政年份:2005
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负责人:Steven Girshick
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依托单位:
NSF Workshop on Nanoscale Mechanical Engineering: June 15-16, 2003
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批准号:0331745
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项目类别:Standard Grant
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资助金额:$4.11万
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财政年份:2003
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负责人:Steven Girshick
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依托单位:
US-France Cooperative Research: Superhard Nanostructured Films
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批准号:0240385
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项目类别:Standard Grant
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资助金额:$1.6万
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财政年份:2003
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负责人:Steven Girshick
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依托单位:
Nanoscale Interdisciplinary Research Teams (NIRT): Superhard Nanostructured Films
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批准号:0103169
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项目类别:Standard Grant
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资助金额:$152.5万
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财政年份:2001
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负责人:Steven Girshick
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依托单位:
Synthesis of Nanostructured Films for Friction and Wear Resistance
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批准号:9871863
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项目类别:Standard Grant
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资助金额:$65.99万
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财政年份:1998
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负责人:Steven Girshick
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依托单位:
Gordon Research Conference on Plasma Processing Science, New Hampton, New Hampshire, August 11 - 16, 1996
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批准号:9529568
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:1995
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负责人:Steven Girshick
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依托单位:
Nanostructured Materials Production by Hypersonic Plasma Particle Deposition
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批准号:9520147
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项目类别:Continuing Grant
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资助金额:$28.95万
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财政年份:1995
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负责人:Steven Girshick
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依托单位:
Thermal Plasma Diamond Deposition: Film Quality and Morphology Under High-Growth Rate Conditions
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批准号:9424271
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项目类别:Standard Grant
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资助金额:$29.84万
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财政年份:1995
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负责人:Steven Girshick
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依托单位:
Diamond Film Deposition in a Radio-Frequency Thermal Plasma
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批准号:9115464
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项目类别:Standard Grant
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资助金额:$24.71万
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财政年份:1991
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负责人:Steven Girshick
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依托单位:
Plasma Synthesis of Ceramics: Studies in Particle Nucleationand Growth
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批准号:9006237
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项目类别:Continuing Grant
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资助金额:$20.0万
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财政年份:1990
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负责人:Steven Girshick
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依托单位:
Plasma Synthesis of Ceramics: Studies in Particle Nucleation and Growth
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批准号:8805934
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项目类别:Continuing Grant
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资助金额:$12.7万
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财政年份:1988
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负责人:Steven Girshick
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依托单位:
海外基金