POWRE: Development of a New Cobalt Precursor for Chemical Vapor Deposition

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The research involves the synthesis and subsequent decomposition in the vapor phase of a variety of cobalt complexes with various metal oxidation states and ligands chosen for the right combination of complex volatility and stability. CVD (chemical vapor deposition), optionally with a silicon precursor, will be used in a search for compounds and conditions that produce electronic device-quality CoSi2 on a single crystal silicon surface. The deposited films will be characterized with a variety of surface analysis methods, including AES, XPS, SIMS, and SEM, and the results used to guide the synthesis effort.With this POWRE award the Chemistry Division supports the work of Dr. Hyungsoo Choi at the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. She will use the chemical vapor deposition (CVD) of volatile cobalt complexes to prepare electronic device-quality CoSi2 on silicon surfaces. Well formed films of CoSi2 of controlled microscopic dimensions would be very useful for highly miniaturized (nanoscale) electronic semiconductor devices.