CAREER: Materials and Processes for Microlithography, Patterning and Surface Modification (Nanoscale)

摘要-9985196 Clifford L. HendersonGeorgiaInstituteofTechnology微光刻技术是一种用于在微电子设备中印刷电路元件的工艺，是半导体行业的关键技术驱动力。 目前的微光刻技术正在达到其分辨率的极限（~ 180 nm），必须开发新的材料和工艺以使该行业继续进步。 如果不能开发出更先进、更高分辨率的图案化工艺，将导致半导体器件的毁灭性破坏。 解决这一问题的双管齐下的方法将通过提供材料工艺的进展来实现，这些材料工艺可以在尺寸上低于100 nm的图案特征。该项目的第一部分涉及针对改进当前光致抗蚀剂（光敏聚合物材料）材料以提供更高分辨率的研究。 开发更好的光致抗蚀剂和基于当前材料的方法的基本问题之一是与测量光致抗蚀剂的物理性质相关的困难，所述物理性质决定其光刻性能，即，由于暴露而产生的酸的浓度和该酸在聚合物基质中的扩散性。 没有这些知识，就很难合理地设计改进的材料和工艺。 这项工作将开发一种新的，革命性的技术的基础上测量的聚合物涂层的叉指电极（IDE）电容器，可用于量化的极小的酸浓度和扩散的这种酸在光刻胶膜的电容。 该技术将根据其他酸测量技术（包括微量滴定法）进行校准。 将评估光致抗蚀剂组合物和处理对该技术的精度和灵敏度的影响。 这项工作中开发的方法和技术将通过与工业界的合作，包括与SEMATECH（工业界的一个研发联合体）的合作，转移到工业界。这项技术将首次使用非侵入性、非破坏性技术来提取开发光致抗蚀剂性能预测模型所需的物理参数。 然后，这些模型可用于指导改进的光致抗蚀剂材料和工艺的合理设计，所述改进的光致抗蚀剂材料和工艺将能够对小至130 nm的特征进行再着色。 为了实现这些分辨率，将有必要从当前的光学曝光系统（193 nm和248 nm光）改变为所谓的“下一代光刻”工具（157 nm或13 nm光）。 这种转换代表了一个实质性的挑战，因为目前在较高波长下使用的光致抗蚀剂材料由于它们在这些真空-UV波长下的强吸收而将不起作用。 因此，必须开发新的光刻胶材料和工艺，所提出的研究的第二部分的目标是开发一种新型的表面成像光刻胶材料，其基于使用表面结合的光敏自由基引发剂的芳香族单体在固体表面的聚合。 这些材料将使图案生成下降到分子长度尺度。 该项目将展示使用这种方法来图案化100 nm以下的特征，并对控制这些材料性能的机制和系统参数有基本的了解。 共价连接的聚合物薄膜在表面上的沉积允许在分子长度尺度上控制表面的完整物理化学性质。 因此，除了半导体应用外，这些材料在生物工程、集成光学和其他将要探索的领域中也有许多用途。（1）开发新课程，（2）修改现有课程，以包括非传统的跨学科问题，（3）实施基于互联网的教学和教学评估工具，（4）为学生创造多元化、跨学科的研究体验。 这些活动的一些具体目标是：（1）为学生提供了解包括微电子学在内的化学工程前沿领域的机会，（2）使半导体工业积极参与教学活动，（3）展示基本工程原理在分析非传统问题中的应用，以及（4）加强微电子学中代表性不足的群体的兴趣和参与。

ABSTRACTCTS-9985196Clifford L. HendersonGeorgia Institute of Technology Microlithography, the process used to print circuit elements inMicroelectronic devices, is the key technology driver for thesemiconductor industry. Current microlithographic technologies arereaching the limits of their resolution (-180 ran) and new materials and processes must be developed to enable continued progress in theindustry. Failure to develop more advanced, higher resolutionpatterning processes would result in a devastating of semiconductordevices. A two pronged approach to solving this problem will be followed by providing a progression of materials processes that can be pattern features down below 100 nm in size. The first part of the projectdeals with research directed at improving current photoresist (the photosensitive polymeric materials) materials to provide higher resolutions. One of the fundamental problems with developing better photoresists and processes based on current materials is the difficulty associated with measuring the physical properties of the photoresist that govern its lithographic performance, i.e. concentration of acid generated due to exposure and diffusivity of this acid in the polymer matrix. Without this knowledge, it is difficult to rationally design improved materials and processes. This work will develop a new, revolutionary technique based on measuring the capacitance of polymer coated interdigitated electrode (IDE) capacitors which can be used for quantifying the extremely small acid concentrations and diffusion of this acid within the photoresist film. This technique will be calibrated against other acid measurement techniques including microtitration methods. The effect of photoresist composition and processing on the accuracy and sensitivity of this technique will be evaluated. The methods and technology developed in this work will be transferred to industry through operations with industry, including a collaboration with SEMATECH (an R&D consortium for the industry). This technique will make it possible for the first time using non-invasive, nondestructive techniques to extract the physical parameters required to develop predictive models for the performance of photoresists. These models can then be used to guide the rational design of improved photoresist materials and processes that will be capable of resoining features as small as 130 nm.The extension of current lithographic photoresist materials and processes is not sufficient to achieve resolutions below approximately 130 nm. To achieve these resolutions it will be necessary to change from current optical exposure systems (193 nm and 248 nm light) to so-called "Next Generation Lithography" tools (157 nm or 13 nm light). This conversion represents a substantial challenge since the current photoresist materials used at higher wavelengths will not function due to their strong absorbance at these vacuum-UV wavelengths. Thus, new photoresist materials and processes must be developed, The goal of the second part of the proposed research is to develop a novel surface imaging photoresist material based on the polymerization of aromatic monomers at solid surfaces using surfacebound photosensitive radical initiators. These materials will enable pattern generation down to molecular length scales. This project will demonstrate the use of such methods to pattern sub-100 nm features and develop a fundamental understanding of the mechanisms and system parameters that control the performance of these materials. The deposition of covalently linked polymer thin films on surfaces allows for the control of the complete physiochemical nature of surfaces over molecular length scales. Thus, in addition to semiconductor applications, these materials have a number of uses in bioengineening, integrated optics, and other areas that will be explored.Four main educational innovations will be pursued: (1) development of new classes, (2) modification of existing courses to include non-traditional interdisciplinary Problems, (3) implementation of internet based teaching and teaching evaluation tools, (4) creation of a diverse, interdisciplinary research experience for students. Some of the specific goals of these activities are to: (1) present students with opportunites to learn about frontier fields for chemical engineers including microelectronics, (2) engage the active participation of thesemiconductor industry in teaching activities, (3) demonstrate the application of fundamental engineering principles in the analysis of non-traditional problems, and (4) strengthen interest and involvement of under-represented groups in microelectronics.