Surface and Overlayer Electronic Structure of Wide Band Gap Nitride Semiconductors

宽带隙氮化物半导体的表面和覆盖层电子结构

• 批准号: 9986099
• 负责人: Kevin Smith
• 金额: $ 30万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2003-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9986099&HistoricalAwards=false
• 关键词: Surface; Overlayer; Electronic; Structure; Wide

This individual investigator award is to a young professor at Boston University for a project to study both the basic surface electronic structure of wide band gap nitride semiconductors, and the electronic structure of metal and non-metal overlayers on such nitrides. The specific goals of the program are to first study the surface electronic structure of nitride alloys; then to study the adsorption of simple gas molecules on well characterized nitride surfaces in order to understand their chemical reactivity, passivation, and properties of non-metal overlayers; and finally to study the reaction of metals with nitrides with the aim of understanding the growth, structure, and stability of contact overlayers. The electronic structure will be measured using two complimentary spectroscopies: angle resolved photoemission and inverse photoemission. This combination of spectroscopic techniques will provide a comprehensive understanding of the surface electronic and chemical properties of wide band gap nitride semiconductors. The project will educate postdoctoral research associates, graduate and undergraduate students in the physics of novel semiconductor materials, and the application of state of the art spectroscopic probes in their study. %%%An important new class of semiconductor based on nitrogen compounds is the focus of intense scrutiny due to their numerous potential applications in lasers and other optical devices that operate in the blue/UV portion of the spectrum. These materials, known as wide band gap nitride semiconductors, also hold the promise of being used in electronic devices operating at much higher temperatures than conventional materials. While many simple devices have been fabricated from these nitrides, there remains an acute lack of knowledge about their surface properties. It is of vital importance for the full commercial exploitation of these new semiconductors to understand their basic surface properties since the surface electronic structure controls many aspects of their chemical reactivity, their structural stability, and how other materials are bonded to the nitrides to form, for example, electrical contacts. This individual investigator award to a young professor at Boston University is for a project to study surface properties of these semiconductors using two probes: photoemission spectroscopy and inverse photoemission spectroscopy. These probes involve respectively the excitation of the electrons in the material by illumination with intense x-rays and measuring their response, or inserting electrons into the solid, and measuring emitted x-rays. This combination of spectroscopies will provide a comprehensive understanding of the surface electronic and chemical properties of wide band gap nitride semiconductors. The program will also educate postdoctoral research associates, graduate and undergraduate students in the physics of novel semiconductor materials, and the application of state of the art spectroscopic probes in their study.***

该个人研究员奖授予波士顿大学的一位年轻教授，该教授的项目旨在研究宽带隙氮化物半导体的基本表面电子结构以及此类氮化物上金属和非金属覆盖层的电子结构。该计划的具体目标是首先研究氮化物合金的表面电子结构；然后研究简单气体分子在特征明确的氮化物表面上的吸附，以了解它们的化学反应性、钝化和非金属覆盖层的特性；最后研究金属与氮化物的反应，旨在了解接触覆盖层的生长、结构和稳定性。 电子结构将使用两种互补的光谱进行测量：角分辨光电发射和逆光电发射。 这种光谱技术的结合将提供对宽带隙氮化物半导体的表面电子和化学性质的全面了解。 该项目将为博士后研究员、研究生和本科生提供新型半导体材料物理学以及最先进的光谱探针在其研究中的应用方面的教育。 %%%基于氮化合物的一类重要的新型半导体是密切关注的焦点，因为它们在激光器和其他在光谱的蓝色/紫外部分工作的光学设备中具有众多的潜在应用。这些被称为宽带隙氮化物半导体的材料也有望用于在比传统材料高得多的温度下工作的电子器件。 虽然许多简单的器件是用这些氮化物制造的，但人们仍然严重缺乏对其表面特性的了解。 对于这些新型半导体的全面商业开发来说，了解它们的基本表面特性至关重要，因为表面电子结构控制着它们的化学反应性、结构稳定性以及其他材料如何与氮化物结合以形成电接触等许多方面。 授予波士顿大学一位年轻教授的个人研究员奖是为了奖励一个使用两种探针研究这些半导体表面特性的项目：光电子能谱和反光电子能谱。 这些探针分别涉及通过强 X 射线照射来激发材料中的电子并测量它们的响应，或者将电子插入固体中并测量发射的 X 射线。 这种光谱学的结合将提供对宽带隙氮化物半导体的表面电子和化学性质的全面了解。该项目还将对博士后研究员、研究生和本科生进行新型半导体材料物理学以及最先进的光谱探针在其研究中的应用方面的教育。***