Reduction of Defects in Ultra-Thin SIMOX

减少超薄 SIMOX 的缺陷

• 批准号: 0072955
• 负责人: Supapan Seraphin
• 金额: $ 52.77万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-06-01 至 2004-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0072955&HistoricalAwards=false
• 关键词: Reduction; Defects; Ultra; Thin; SIMOX

This project addresses fundamental research issues in formation mechanisms of structural defects in ultra-thin SIMOX-SOI (Separation by IMplanted OXygen-Silicon On Insulator) materials and into the correlation between these structural defects and processing conditions. Finding the cause of defect formation and providing effective solutions to minimize defect density in ultra-thin layers are significant challenges, being approached by integrated structural, chemical, and electrical characterization with modeling of diffusional, growth, and ripening processes of precipitates to gain greater fundamental un-derstanding. This involves (1) microstructural and chemical analysis of newly designed ultra-thin SIMOX samples, by employing transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), electron energy loss spectroscopy (EELS) and Auger electron spectros-copy (AES); (2) determination of the buried oxide integrity by C-V and I-V measurements; (3) in-depth understanding of the formation and growth mechanisms of the defects; (4) systematic evaluation of the formation of defects as a function of growth conditions by identifying the factors that control defect formation and incorporation; (5) comparison of the samples before and after annealing to study the dif-fusion properties of Si interstitials; and (6) modeling of the precipitate growth and coarsening. An-nealing effects including temperature variations, annealing times, and ramping and cooling rates will be investigated. In situ experiments will be conducted in TEM by using a heating holder (up to 1200 C) to investigate the dynamic structural evolution in real-time. This research project is collaborative be-tween the Department of Materials Science and Engineering and the Department of Mechanical and Aerospace Engineering, University of Arizona.%%% The project addresses basic research issues in a topical area of materials science with high technologi-cal relevance. Advanced characterization techniques allow greater understanding and control of ele-mentary processes involved in SOI (silicon on insulator) technology which will allow advances in fun-damental materials science and technology. The basic knowledge and understanding gained from the research is expected to contribute to next generation microelectronic materials. An important feature of the program is the integration of research and education through the training of students in a funda-mentally and technologically significant area. ***

本项目主要研究超薄SIMOX-SOI（Separation by Implanted OXygen-Silicon On Insulator）材料中结构缺陷的形成机制以及这些结构缺陷与工艺条件之间的相关性。寻找缺陷形成的原因并提供有效的解决方案以最大限度地减少超薄层中的缺陷密度是一项重大挑战，通过集成结构，化学和电学表征以及沉淀物的扩散，生长和成熟过程的建模来获得更大的基本理解。采用透射电子显微镜（TEM）、场发射扫描电子显微镜（FESEM）、电子能量损失谱（EELS）和俄歇电子能谱（AES）对新设计的超薄SIMOX样品进行了微观结构和化学分析，用C-V和I-V测量确定了埋氧层的完整性，并对埋氧层的结构进行了表征。（3）深入理解缺陷的形成和生长机制;（4）通过识别控制缺陷形成和合并的因素，系统地评估作为生长条件的函数的缺陷的形成;（5）比较退火前后样品的扩散性能，（6）模拟析出相的长大和粗化。退火的影响，包括温度变化，退火时间，斜坡和冷却速率将进行调查。原位实验将通过使用加热保持器（高达1200 ℃）在TEM中进行，以实时研究动态结构演变。本研究项目由亚利桑那大学材料科学与工程系和机械与航空航天工程系合作完成。该项目涉及材料科学领域的基础研究问题，具有高技术相关性。先进的表征技术可以更好地理解和控制SOI（绝缘体上硅）技术中涉及的电子过程，这将促进基础材料科学和技术的发展。从研究中获得的基本知识和理解有望有助于下一代微电子材料。 该计划的一个重要特点是通过在一个基本的精神和技术重要领域培养学生，将研究和教育相结合。***