Microscopic Mechanisms of III-Nitride Growth

该项目旨在更好地了解III族氮化物生长过程中的主要微观过程。该方法结合了高温扫描隧道显微镜，反射高能电子衍射和解吸质谱。将寻求预测性增长模型。将（与其他方面合作）开发速率方程模型和动力学蒙特卡罗模型。需要解决的重要问题是可以使用的GaN表面的极性和结构的差异，生长参数的作用以及缺陷的作用。将研究对III族氮化物生长进行微观控制的方法。%该项目涉及材料科学专题领域的基础研究问题，具有高度的技术相关性。现在已有实验工具，可以在原子水平上观察基本表面过程，如果能更好地了解这些过程，就可以在基础科学和技术方面取得进展。这项工作的结果可能会使材料生长的可靠控制达到新的水平，从而使具有可重复特性的半导体器件在各种学术和商业环境中获得。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

This project strives for greater understanding of the primary microscopic processes involved in the growth of III-nitrides. The approach incorporated high temperature scanning tunneling microscopy, reflection high energy electron diffraction and desorption mass spectroscopy. A predictive growth model will be sought. Rate equation models and kinetic Monte Carlo models (in collaboration with others) will be developed. Important issues to be addressed will be the differences in polarity and structure of the GaN surfaces that can be used, the role of growth parameters, and the role of defects. Methods to exert microscopic control over the growth of III-nitrides will be investigated.%%% The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The results of this work may allow a new level of reliable control of materials growth, allowing semiconductor devices with reproducible properties to be attained in a variety of academic and commercial settings. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***