Microscopic Mechanisms of III-Nitride Growth

该项目致力于更好地了解iii -氮化物生长的主要微观过程。该方法结合了高温扫描隧道显微镜、反射高能电子衍射和解吸质谱。将寻求一种预测增长模型。速率方程模型和动力学蒙特卡罗模型（与他人合作）将被开发。需要解决的重要问题将是可以使用的GaN表面的极性和结构的差异，生长参数的作用以及缺陷的作用。研究了微观控制iii -氮化物生长的方法。该项目涉及材料科学中具有高技术相关性的主题领域的基础研究问题。现在有了实验工具，可以在原子水平上观察基本的表面过程，这些过程一旦得到更好的理解，就会促进基础科学和技术的进步。这项工作的结果可能会使材料生长的可靠控制达到一个新的水平，允许在各种学术和商业环境中获得具有可重复性的半导体器件。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

This project strives for greater understanding of the primary microscopic processes involved in the growth of III-nitrides. The approach incorporated high temperature scanning tunneling microscopy, reflection high energy electron diffraction and desorption mass spectroscopy. A predictive growth model will be sought. Rate equation models and kinetic Monte Carlo models (in collaboration with others) will be developed. Important issues to be addressed will be the differences in polarity and structure of the GaN surfaces that can be used, the role of growth parameters, and the role of defects. Methods to exert microscopic control over the growth of III-nitrides will be investigated.%%% The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The results of this work may allow a new level of reliable control of materials growth, allowing semiconductor devices with reproducible properties to be attained in a variety of academic and commercial settings. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***