CAREER: The Materials Science of Metamorphic Buffer Layers for High Performance Device Applications
职业:高性能器件应用的变质缓冲层的材料科学
基本信息
- 批准号:0092602
- 负责人:
- 金额:$ 45.91万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2001
- 资助国家:美国
- 起止时间:2001-01-01 至 2005-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This CAREER project addresses the formation, strain relaxation, and morphological evolution of metamorphic buffer layers and their impact on the properties and performance of device applications specific to the wireless communication industry. Buffer layers based on Sb-containing alloys will be studied to achieve flat and low defect layers. Layer designs that reduce roughness and threading dislocations will also be studied. Properties will be characterized using a in situ (Multi-Beam Optical Stress Sensor, Reflection High Energy Electron Diffraction, Scanning Tunneling Microscopy)and ex situ (triple axis x-ray diffraction, transmission electron diffraction, photoluminescence, Hall measurements) techniques to assess microstructure and morphology, and their impact on electronic and optical properties. Additionally, MHEMT devices will be fabricated based on optimized metamorphic buffer layers, tested, and performance compared to the state-of-the-art devices. The project will be integrated into educational activities that include undergraduate and graduate curriculum development, undergraduate research opportunities, and outreach to young women.%%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science and physics knowledge at a fundamental level to important aspects of electronic/photonic materials. The scope of the project will expose students to challenges in materials synthesis, processing, and characterization. An important feature of the project is the strong emphasis on education, outreach to young women, and the integration of research and education. ***
这个CAREER项目解决了变形缓冲层的形成,应变松弛和形态演变及其对无线通信行业特定设备应用的性能和性能的影响。将研究基于含Sb合金的缓冲层以实现平坦和低缺陷层。层设计,减少粗糙度和螺纹位错也将进行研究。将使用原位(多光束光学应力传感器、反射高能电子衍射、扫描隧道显微镜)和非原位(三轴X射线衍射、透射电子衍射、光致发光、霍尔测量)技术表征性能,以评估微观结构和形态及其对电子和光学性能的影响。此外,MHEMT器件将基于优化的变质缓冲层制造,测试,并与最先进的器件进行性能比较。该项目将被纳入教育活动,包括本科生和研究生课程开发,本科生研究机会,并推广到年轻女性。该项目涉及具有高度技术相关性的材料科学专题领域的基础研究问题。该研究将为电子/光子材料的重要方面提供基础材料科学和物理知识。该项目的范围将使学生面临材料合成,加工和表征方面的挑战。该项目的一个重要特点是大力强调教育、与青年妇女的联系以及研究与教育的结合。***
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Joanna Millunchick其他文献
Rethinking Undergraduate Computer Science Education: Using the 4Es Heuristic to Center Students in an Introductory Computer Science Course
反思本科计算机科学教育:使用 4E 启发法让学生以计算机科学入门课程为中心
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:3
- 作者:
Francheska D. Starks;Shalaunda M. Reeves;Jonathan Rickert;Kyle Li;Brock Couch;Joanna Millunchick - 通讯作者:
Joanna Millunchick
Modeling, design and fabrication of a freestanding nanoporous membrane
- DOI:
10.1016/j.mee.2011.08.002 - 发表时间:
2011-11-01 - 期刊:
- 影响因子:
- 作者:
Di Deng;Denis Nothern;David Liaw;Thomas Liu;Peter Peterson;Brian Gilchrist;Joanna Millunchick - 通讯作者:
Joanna Millunchick
Joanna Millunchick的其他文献
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{{ truncateString('Joanna Millunchick', 18)}}的其他基金
I-Corps: On-chip Integration of Optoelectronic Devices
I-Corps:光电器件的片上集成
- 批准号:
1622890 - 财政年份:2016
- 资助金额:
$ 45.91万 - 项目类别:
Standard Grant
Closed-Loop Experiment-Simulation Approach to Designer Materials: GaAsSbBi for Optoelectronics.
设计材料的闭环实验模拟方法:用于光电子学的 GaAsSbBi。
- 批准号:
1606553 - 财政年份:2016
- 资助金额:
$ 45.91万 - 项目类别:
Standard Grant
Research Initiation: Understanding the relationships between participation in co-curricular activities, student characteristics, and the professional formation of engineers.
研究启动:了解参与课外活动、学生特征和工程师专业形成之间的关系。
- 批准号:
1640417 - 财政年份:2016
- 资助金额:
$ 45.91万 - 项目类别:
Standard Grant
Collaborative Research: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
合作研究:材料世界网络:用于红外和中红外半导体的 III-V 双酰胺材料
- 批准号:
0908745 - 财政年份:2009
- 资助金额:
$ 45.91万 - 项目类别:
Continuing Grant
Morphology and Chemsitry of Lateral Composition Modulations
横向成分调节的形态学和化学
- 批准号:
0307938 - 财政年份:2003
- 资助金额:
$ 45.91万 - 项目类别:
Continuing Grant
POWRE: Optical Characterization for Research and Undergraduate Education
POWRE:用于研究和本科教育的光学表征
- 批准号:
0074712 - 财政年份:2000
- 资助金额:
$ 45.91万 - 项目类别:
Standard Grant
Morphology and Chemistry of Lateral Composition Modulation
横向成分调制的形态学和化学
- 批准号:
9973352 - 财政年份:1999
- 资助金额:
$ 45.91万 - 项目类别:
Standard Grant
相似国自然基金
Journal of Materials Science & Technology
- 批准号:51024801
- 批准年份:2010
- 资助金额:24.0 万元
- 项目类别:专项基金项目
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