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POWRE: Optical Characterization for Research and Undergraduate Education

POWRE: Optical Characterization for Research and Undergraduate Education
POWRE:用于研究和本科教育的光学表征
批准号:
0074712
负责人:
Joanna Millunchick
金额:
$7.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-06-01 至 2002-05-31

项目摘要

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中文摘要
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英文摘要
This project seeks to implement a state-of-the-art photoluminescence capability to extend the PIs semiconductor characterization capabilities and to provide an important tool in undergraduate education; it will be used in undergraduate laboratory projects for a special materials science course. The PI has established a research program in exploring materials issues of semiconductor thin film growth focused on microstructural, morphological, and compositional evolution in III-V semiconductor alloys. This project will allow correlation of microstructural, morphological, and compositional phenomena to optoelectronic properties. %%% This is a research enhancement grant made under the Professional Opportunities for Women in Research and Education (POWRE) program. The POWRE grant will maintain and raise her visi-bility in the very competitive and male-dominated field of semiconductor and microelectronic re-search by branching her research into the realm of optical characterization and device applica-tions. The research is expected to contribute basic materials science knowledge at a fundamental level of special relevance to the behavior of electronic/photonic materials, and to assist with the integration of research and education. The project is co-supported by the Division of Materials Research, and the MPS OMA(Office of Multidisciplinary Activities). ***
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Research Initiation: Understanding the relationships between participation in co-curricular activities, student characteristics, and the professional formation of engineers.
Closed-Loop Experiment-Simulation Approach to Designer Materials: GaAsSbBi for Optoelectronics.
I-Corps: On-chip Integration of Optoelectronic Devices
Collaborative Research: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
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