Collaborative Research: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
合作研究:材料世界网络:用于红外和中红外半导体的 III-V 双酰胺材料
基本信息
- 批准号:0908745
- 负责人:
- 金额:$ 25.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2009
- 资助国家:美国
- 起止时间:2009-08-01 至 2013-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Abstract This Materials World Network project, involves investigators from Arizona State University and the University of Michigan in the US, the University of Victoria and Simon Fraser University in Canada, the University of Surrey in the UK, and Philipps-Universität in Germany, and focuses on a relatively unexplored family of III-V semiconductor alloys containing the heaviest naturally occurring group V element, bismuth. Bismuth is non-toxic, relatively inexpensive, and the heaviest non-radioactive element in the periodic table. Furthermore, Bi-alloys have a very large spin orbit splitting and a smaller temperature dependence of the bandgap when compared with conventional semiconductor alloys. The research objective of this international collaboration is to theoretically and experimentally develop study III-V bismide compound semiconductors for IR and mid IR optoelectronic devices and other small bandgap devices at the readily available lattice constants of GaAs, InP, InAs, and GaSb. The research activities include molecular beam epitaxy growth of III-V bismide materials; structural characterization and property measurements aimed at developing an understanding of dopant incorporation, bandgap energy, band offsets, materials performance, and radiative efficiency of these materials and related devices; and theoretical analysis of the electronic and optical properties of quantum-well structures and optical devices based on Bi-containing compound semiconductors. The theoretical and device-level research will be performed mainly by the overseas scientists. The networking objective of this project is to link this Materials World Network with the larger global scientific research community by hosting two international workshops, one at the University of Michigan during the summer of 2010 and one at the University of Surrey during the summer of 2011, and by developing cyberinfrastructure to enhance data sharing and analysis between Bi-alloy investigators and the broader scientific community. These activities, promote sample exchange and tool sharing for the development of III-V bismide materials, enhance science and technology through broader dissemination, understanding, and face-to-face interactions between students and researchers, and advance data sharing and information exchange, which may well inspire further innovation and change the way data is managed and material challenges are addressed.
这个材料世界网络项目涉及来自美国亚利桑那州州立大学和密歇根大学、加拿大维多利亚大学和西蒙弗雷泽大学、英国萨里大学和德国菲利普斯大学的研究人员,重点关注一个相对未开发的含有最重的自然存在的V族元素铋的III-V族半导体合金家族。铋是无毒的,相对便宜,是周期表中最重的非放射性元素。此外,与传统的半导体合金相比,Bi合金具有非常大的自旋轨道分裂和较小的带隙温度依赖性。这项国际合作的研究目标是在理论和实验上开发用于IR和中IR光电器件以及其他小带隙器件的III-V族双酰亚胺化合物半导体,其晶格常数为GaAs,InP,InAs和GaSb。研究活动包括III-V族双酰亚胺材料的分子束外延生长;旨在了解掺杂剂掺入、带隙能量、带偏移、材料性能和这些材料及相关器件的辐射效率的结构表征和性能测量;并对Bi-Si量子阱结构和光学器件的电学和光学性质进行了理论分析。含有化合物半导体。理论和设备级研究将主要由海外科学家进行。该项目的联网目标是通过主办两个国际研讨会,一个在密歇根大学在2010年夏天,一个在萨里大学在2011年夏天,并通过开发网络基础设施,以加强数据共享和分析之间的铋合金研究人员和更广泛的科学界,将材料世界网络与更大的全球科学研究界联系起来。这些活动将促进样本交流和工具共享,以开发III-V族二酰亚胺材料,通过更广泛的传播、理解和学生与研究人员之间的面对面互动来加强科学和技术,并促进数据共享和信息交流,这很可能会激发进一步的创新,并改变数据管理和应对材料挑战的方式。
项目成果
期刊论文数量(0)
专著数量(0)
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会议论文数量(0)
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Joanna Millunchick其他文献
Rethinking Undergraduate Computer Science Education: Using the 4Es Heuristic to Center Students in an Introductory Computer Science Course
反思本科计算机科学教育:使用 4E 启发法让学生以计算机科学入门课程为中心
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:3
- 作者:
Francheska D. Starks;Shalaunda M. Reeves;Jonathan Rickert;Kyle Li;Brock Couch;Joanna Millunchick - 通讯作者:
Joanna Millunchick
Modeling, design and fabrication of a freestanding nanoporous membrane
- DOI:
10.1016/j.mee.2011.08.002 - 发表时间:
2011-11-01 - 期刊:
- 影响因子:
- 作者:
Di Deng;Denis Nothern;David Liaw;Thomas Liu;Peter Peterson;Brian Gilchrist;Joanna Millunchick - 通讯作者:
Joanna Millunchick
Joanna Millunchick的其他文献
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{{ truncateString('Joanna Millunchick', 18)}}的其他基金
I-Corps: On-chip Integration of Optoelectronic Devices
I-Corps:光电器件的片上集成
- 批准号:
1622890 - 财政年份:2016
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
Closed-Loop Experiment-Simulation Approach to Designer Materials: GaAsSbBi for Optoelectronics.
设计材料的闭环实验模拟方法:用于光电子学的 GaAsSbBi。
- 批准号:
1606553 - 财政年份:2016
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
Research Initiation: Understanding the relationships between participation in co-curricular activities, student characteristics, and the professional formation of engineers.
研究启动:了解参与课外活动、学生特征和工程师专业形成之间的关系。
- 批准号:
1640417 - 财政年份:2016
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
Morphology and Chemsitry of Lateral Composition Modulations
横向成分调节的形态学和化学
- 批准号:
0307938 - 财政年份:2003
- 资助金额:
$ 25.5万 - 项目类别:
Continuing Grant
CAREER: The Materials Science of Metamorphic Buffer Layers for High Performance Device Applications
职业:高性能器件应用的变质缓冲层的材料科学
- 批准号:
0092602 - 财政年份:2001
- 资助金额:
$ 25.5万 - 项目类别:
Continuing Grant
POWRE: Optical Characterization for Research and Undergraduate Education
POWRE:用于研究和本科教育的光学表征
- 批准号:
0074712 - 财政年份:2000
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
Morphology and Chemistry of Lateral Composition Modulation
横向成分调制的形态学和化学
- 批准号:
9973352 - 财政年份:1999
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
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