CAREER: Thermal Management of Nanoelectronic Devices and Circuits
CAREER: Thermal Management of Nanoelectronic Devices and Circuits
批准号:
0093959
负责人:
Alexander Balandin
金额:
$37.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-04-01 至 2007-03-31
中文摘要
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英文摘要
As the device size continues to shrink and integration density continues to increase, the size and spatial confinement effects on heat removal become increasingly important. A rapid emergence of nanotechnology as a nation's high-priority field and renewed interest to thermoelectrics add significance to the research on thermal management of nanoelectronic devices and circuits proposed in this NSF-CAREER project. Beside its fundamental science value, investigation of phonon transport at nanoscale is crucial for future progress in electronic and optoelectronic device technologies. The goals of this project are (i) comprehensive investigation of heat conduction in nanoscale semiconductor structures, devices and circuits; (ii) derivation of new thermal management rules applicable to scaled-down devices; (iii) fundamental study of the effects of phonon confinement and boundary scattering on phonon propagation; and (iv) improvement of reliability of nanoelectronic devices and circuits.The proposed education plan aims at jump-starting a new engineering specialization - Devices and Circuits with emphasis on nanotechnology and nanodevices. It will be accomplished by active course development, increase of the laboratory component of the curriculum, and student involvement in research. The cross-disciplinary nature of the project will allow students to gain a variety of skills required in a contemporary high-tech job market.Investigation of thermal management of nanodevices will be carried out in a newly established Nanoelectronic Materials and Device Laboratory. The outcome of this research will add to the core knowledge of nanostructures, phonon transport, and quantum confinement. It will lay down the foundation of the novel enabling technology utilizing active phonon engineering.
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批准号:2019056
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依托单位:
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批准号:1549942
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资助金额:$7.5万
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依托单位:
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批准号:1433395
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资助金额:$167.83万
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财政年份:2014
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负责人:Alexander Balandin
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依托单位:
CDS&E/Collaborative Research: Genetic Algorithm Driven Hybrid Computational/Experimental Engineering of Defects in Designer Materials
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批准号:1404967
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项目类别:Standard Grant
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资助金额:$16.8万
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财政年份:2014
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负责人:Alexander Balandin
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依托单位:
Two Dimensional Performance with Three Dimensional Capacity: Engineering the Thermal Properties of Graphene
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批准号:1307671
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2013
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负责人:Alexander Balandin
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依托单位:
SHF: Small: Collaborative Research: Graphene Circuits for Analog, Mixed-Signal, and RF Applications
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批准号:1217382
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项目类别:Standard Grant
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资助金额:$17.5万
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财政年份:2012
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负责人:Alexander Balandin
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依托单位:
NEB: Charge-Density-Wave Computational Fabric: New State Variables and Alternative Material Implementation
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批准号:1124733
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项目类别:Standard Grant
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资助金额:$130.0万
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财政年份:2011
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负责人:Alexander Balandin
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依托单位:
REU Site: Education Through Research in Nanomaterials and Nanodevices
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批准号:0552562
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2006
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负责人:Alexander Balandin
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依托单位:
NER/SNB: Nanophononics: A New Approach to Electron Transport Enhancement in Nanoscale Devices
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批准号:0508516
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2005
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负责人:Alexander Balandin
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依托单位:
SGER: Novel Phonon Engineering Concepts for Nanoscale Devices and 3D Integrated Circuits
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批准号:0407848
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项目类别:Standard Grant
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资助金额:$5.98万
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财政年份:2004
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负责人:Alexander Balandin
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依托单位:
PostDoctoral Research Fellowship
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批准号:0312065
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项目类别:Fellowship Award
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资助金额:$3.72万
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财政年份:2003
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负责人:Alexander Balandin
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依托单位:
NER: Enhancement of the Efficiency of Thermoelectric Devices via Engineering of the Electron-Phonon Interaction in Quantum Dot Superlattices
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批准号:0210282
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项目类别:Standard Grant
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资助金额:$8.0万
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财政年份:2002
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负责人:Alexander Balandin
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依托单位:
国内基金
海外基金
Thermal-lag自由活塞斯特林发动机启动与可持续运行机理研究
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批准号:51806227
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项目类别:青年科学基金项目
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资助金额:24.0万元
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批准年份:2018
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负责人:牟健
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依托单位: