EFRI 2-DARE: Novel Switching Phenomena in Atomic Heterostructures for Multifunctional Applications

EFRI-1433395 Balandin（加州大学河滨分校）非技术描述：本研究涉及一类新的超薄膜材料，称为货车德瓦尔斯材料，以及用这种材料实现的异质结构;具体来说，本项目研究了这种材料和异质结构中的新的电学，光学和热学现象。这项工作将导致新的材料合成技术，并使超薄薄膜材料在电子开关，光学探测器，低功耗信息处理和直接能量转换中的实际应用成为可能。用货车德瓦耳斯材料的超薄膜实现的新型器件具有高速和低能量耗散的潜力。全金属开关和电光传感器的发明将对国家的国防需求产生重大影响，因为全金属设备具有固有的抗辐射性。在这个项目中开发的软件工具将免费提供给广泛的研发社区。&这项研究将提高美国的经济竞争力，培养具有全球竞争力的STEM劳动力，并为本科和研究生STEM教育做出贡献。该项目团队制定了一项详细的扩大参与计划，将影响K-12，本科和研究生教育的少数民族在STEM领域代表不足。 技术说明：这个跨学科的项目研究了过渡金属二硫属化物的二维材料和异质结构的广泛类别，揭示了一系列与电子和声子能带结构，邻近效应，激子凝聚和强相关现象的约束诱导修改相关的新颖开关现象。该项目的目标是合成高质量的，原子级薄的过渡金属二硫属化物薄膜，具有受控的晶相（例如，1T vs. 2H）;制造悬浮的二维过渡金属二硫属化物薄膜和场效应晶体管型器件;探索这些结构和器件中的电、光和热现象;并利用在这些结构中观察到的新颖开关现象来制造低功率逻辑门、全金属抗辐射开关和光电换能器。为了实现这些目标，跨学科项目团队包括公认的研究人员，他们具有互补的专业知识，先前的合作经验和二维材料的广泛出版记录。这项变革性研究的结果将增加关于二维材料和异质结构的电学，光学和热学性质的核心知识，这些材料和异质结构采用过渡金属二硫属化物和相关的层状结构。该项目将导致更好地理解相关现象，激子效应，以及二维材料的异质界面电子和声子特性。关于异质结构的电子和声子传输特性的信息将使该团队能够利用新颖的电学和光学开关现象来开发创新器件。该团队将制作一个详细的材料属性数据库，其中包含过渡金属二硫属化物薄膜、异质结构和扭曲少层材料的电子和声子材料数据。该研究项目涉及EFRI的所有三个推力领域。

EFRI-1433395Balandin (Univ. of California-Riverside)Non-tecnmical description: This research addresses a new class of ultra-thin film materials, termed van der Waals materials, and heterostructures implemented with such materials; specifically this project investigates novel electrical, optical, and thermal phenomena in such materials and heterostructures. The work will result in new material synthesis techniques and enable practical applications of ultra-thin film materials in electronic switches, optical detectors, low-power information processing and direct energy conversion. The novel devices implemented with the ultra-thin films of van der Waals materials have potential for high speed and low energy dissipation. The creation of all-metallic switches and electrical-optical transducers will have a strong impact on the Nation's defense needs owing to the inherent radiation hardness of all-metallic devices. The software tools developed in this project will be made freely available to a broad R&D community. This research will increase US economic competitiveness, develop a globally competitive STEM workforce, and contribute to undergraduate and graduate STEM education. The project team developed a detailed Broadening Participation Plan that will impact K-12, undergraduate and graduate education of minorities underrepresented in STEM fields. Technical description: This interdisciplinary project investigates the broad class of two-dimensional materials and heterostructures of transition-metal dichalcogenides, which reveal a range of novel switching phenomena related to confinement-induced modification of electron and phonon band structure, proximity effects, exciton condensation and strongly correlated phenomena. The project goals are to synthesize high-quality, atomically-thin transition-metal dichalcogenide films with controlled crystalline phase (e.g., 1T vs. 2H); fabricate suspended two-dimensional transition-metal dichalcogenide films and field-effect-transistor type devices; explore electrical, optical and thermal phenomena in these structures and devices; and utilize novel switching phenomena observed in these structures for the creation of low-power logic gates, all-metallic radiation-hard switches and optical-electrical transducers. To achieve these goals, the interdisciplinary project team includes recognized researchers with complementary expertise, prior experience of cooperation and an extensive publication record in two-dimensional materials. The results of this transformative research will add to the growing core knowledge about the electrical, optical and thermal properties of two-dimensional materials and heterostructures implemented with transition-metal dichalcogenides and related layered structures. The project will lead to a better understanding of correlated phenomena, excitonic effects, and the hetero-interface electronic and phonon properties of two-dimensional materials. The information about the electron and phonon transport properties of heterostructures will allow the team to exploit novel electrical and optical switching phenomena for developing innovative devices. The team will produce a detailed Materials Property Database with electron and phonon materials data for transition-metal dichalcogenide films, heterostructures, and twisted few-layer materials. The research project addresses all three EFRI thrust areas.