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SGER: Novel Phonon Engineering Concepts for Nanoscale Devices and 3D Integrated Circuits

SGER: Novel Phonon Engineering Concepts for Nanoscale Devices and 3D Integrated Circuits
SGER:纳米级器件和 3D 集成电路的新颖声子工程概念
批准号:
0407848
负责人:
Alexander Balandin
金额:
$5.98万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-07-01 至 2005-06-30

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英文摘要
The problem of heat removal becomes crucial for continuing CMOS downscaling, beyond CMOS nanoscale concepts, ULSI, and 3D architecture proposals. Conventional heat removal methods and post device-design / packaging level cooling solutions fail to work at nanoscale and in 3D architectures. This proposal introduces a drastic philosophy change in heat removal, e.g. thermal management features incorporated at the materials / device level, as well as two new radical concepts of heat removal via phonon engineering such as (i) thermal conductivity enhancement of the material along chosen directions via proper engineering of device heterostructures and (ii) smart arrangement of the nanoscale devices in ULSI circuits or in 3D architectures to achieve acoustic phonon interference and phonon annihilation, e.g. local cooling, in pre-determined locations.
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