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NEB: Charge-Density-Wave Computational Fabric: New State Variables and Alternative Material Implementation

NEB：电荷密度波计算结构：新状态变量和替代材料实现

基本信息

批准号：
1124733
负责人：
Alexander Balandin
金额：
$ 130万
依托单位：
University of California-Riverside
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2011
资助国家：
美国
起止时间：
2011-10-01 至 2016-09-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1124733&HistoricalAwards=false
关键词：
NEB Charge Density Wave Computational

项目摘要

Intellectual Merit: This project is awarded under the Nanoelectronics for 2020 and Beyond competition, with support by multiple Directorates and Divisions at the National Science Foundation as well as by the Nanoelectronics Research Initiative of the Semiconductor Research Corporation. Continuing evolution of electronics beyond the limits of the conventional silicon technology requires innovative approaches for solving the heat dissipation, speed and scaling issues. Alternative state variables other than dissipative charge transfer hold promise for drastic improvements in computational power. Collective states of magnetization, spin waves, and exciton condensates are being considered, but, to date, the performance results are modest. This project proposes a revolutionary new approach for the collective states that carry electrical signals, do not require magnetic fields, and can be realized at room temperature. The alternative state variables will be implemented with charge-density waves. The charge-density wave effects have been known for decades but never considered for information processing. The intellectual merit of this project includes better understanding of the material properties and physical processes of charge-density wave materials in highly-scaled, low-dimension regimes that have not yet been explored. The results of the project will lead to optimized device designs for exploiting charge-density waves and accurate understanding of the fundamental limits of the performance metrics. The intellectual merit also includes performance evaluation of the low-noise topological insulator interconnects proposed as part of new architectures. The project will result in new knowledge of the properties of the charge-density wave materials obtained with the help of optical microscopy, atomic-force microscopy, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy and other techniques. Broader Impact: The proposed project will lead to a revolutionary new technology for replacing or complementing conventional silicon complementary metal-oxide-semiconductor technology. The phase, frequency and amplitude of the collective current of the interfering charge waves will encode information and allow for massive parallelism in information processing. The possibility of using the phase for logic operations allows one to minimize the required number of elements per circuit, reduce the power consumption, and ease the scaling requirement. The charge-density wave devices will be implemented with an alternative growth technique ? electrochemical atomic layer deposition ? with demonstrated potential for synthesis of crystalline atomically-thin layers of pertinent materials. The technique will allow the research team to experiment with new chemistries and heterogeneous integration of a variety of charge-density wave materials. The low-dissipation, massively parallel information processing with the collective state variables can satisfy the computational, communication, and sensor technology requirements for decades to come. The successful project will (i) improve the economic competitiveness of the United States; (ii) contribute to national security; and (iii) increase participation of underrepresented minorities in science and engineering. The project will result in improved student education and training at the University of California ? Riverside, a minority serving institution with a large Hispanic student population. The broader impact includes contributions to the development of a synergetic interdisciplinary Materials Science and Education program, as well as contributions to graduate and undergraduate training focused on materials synthesis, at the University of Georgia.

智力优势：该项目是在Nanoelectronics for 2020及以后的竞争中获得的，得到了国家科学基金会多个部门和部门以及半导体研究公司Nanoelectronics Research Initiative的支持。电子器件的不断发展超越了传统硅技术的限制，需要创新的方法来解决散热、速度和缩放问题。替代状态变量以外的耗散电荷转移举行承诺大幅提高计算能力。集体状态的磁化，自旋波，和激子凝聚正在考虑，但迄今为止，性能结果是温和的。该项目提出了一种革命性的新方法，用于携带电信号的集体状态，不需要磁场，并且可以在室温下实现。替代状态变量将与电荷密度波实现。电荷密度波效应已经被人们知道了几十年，但从未被考虑用于信息处理。该项目的智力价值包括更好地理解电荷密度波材料在尚未探索的高尺度、低维区域中的材料特性和物理过程。该项目的结果将导致优化的器件设计，以利用电荷密度波和准确理解性能指标的基本限制。智力的优点还包括性能评估的低噪声拓扑绝缘体互连提出的新架构的一部分。该项目将使人们对借助光学显微镜、原子力显微镜、扫描电子显微镜、透射电子显微镜、拉曼光谱学和其他技术获得的电荷密度波材料的性质有新的认识。更广泛的影响：拟议的项目将导致一项革命性的新技术，用于取代或补充传统的硅互补金属氧化物半导体技术。干扰电荷波的集体电流的相位、频率和振幅将对信息进行编码，并允许信息处理中的大规模并行性。使用相位进行逻辑运算的可能性允许最小化每个电路所需的元件数量，降低功耗，并简化缩放要求。电荷密度波器件将与替代的生长技术？电化学原子层沉积具有合成相关材料的结晶原子薄层的潜力。该技术将使研究小组能够实验新的化学物质和各种电荷密度波材料的异质集成。具有集体状态变量的低耗散、大规模并行信息处理可以满足未来几十年的计算、通信和传感器技术需求。成功的项目将（i）提高美国的经济竞争力;（ii）促进国家安全;（iii）增加代表性不足的少数民族在科学和工程领域的参与。该项目将改善加州大学的学生教育和培训。滨江，一个少数民族服务机构与大量的西班牙裔学生人口。更广泛的影响包括对协同跨学科材料科学与教育计划的发展做出贡献，以及对格鲁吉亚大学研究生和本科生材料合成培训的贡献。