CAREER: In Situ Monitoring of Surface Phenomena during Silicon Germanium Deposition and Etching

这个职业生涯项目的中心是硅上硅锗的纳米异质外延，用于未来的光电应用。将纳米结构架构集成到制造中提出了许多工程挑战，例如在Si上选择性沉积SiGe和具有最小临界尺寸损失的理想图案转移。这里的策略是从根本上理解SiGe表面上发生的界面现象。该方法利用原位真实的时间红外和拉曼光谱技术。该真实的时间诊断提供了一种捕获动态SiGe表面对沉积和蚀刻前体的响应的手段。在这方面，将利用衰减全反射傅里叶变换红外光谱和衰减全反射表面增强拉曼光谱的检测灵敏度和偏振依赖性。这两种技术将有助于在SiGe的等离子体蚀刻期间区分侧壁表面现象和沟槽底部现象。它也打算提取离子能量分布函数在蚀刻等离子体从实验测得的随时间变化的等离子体和基板电位。电容分压器和朗缪尔探针可以测量这些电位。分布函数将与所得蚀刻轮廓相关。从全面的诊断所获得的显着的信息，预计将带来更好的理解SiGe的沉积和蚀刻机制，以及离子/中性输运内的SiGe沟槽。所获得的知识也将促进理想的图案转移，帮助实现SiGe的新应用，并指导计算轮廓模拟器的开发。三个教育活动将继续进行：（1）开发新的选修课程在半导体加工，（2）通过研究提供密切的指导和职业咨询，（3）启动高中外展计划。这些教育活动将从研究中得到很大的启发。将开发化学气相沉积和等离子体/表面诊断课程，为学生提供备用场地，为电子行业或相关研究领域的职业生涯做准备。除了研究生，本科生也将积极参与研究。高中高年级学生将积极招募使用推广计划，以告知未来的高中学生在UNM的研究型教育机会。该推广方案还有助于提高高中学生接受中学后教育的比例，特别是增加西班牙裔学生的入学率。后一个目标符合UNM的机构利益，UNM是联邦政府认可的西班牙裔服务机构。该项目涉及具有高度技术相关性的材料科学专题领域的基础研究问题。该项目的范围将使学生面临材料合成，加工和表征方面的挑战。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。***

This CAREER project centers on nanoheteroepitaxy of SiGe on Si for future optoelectronic applications. Integrating nanostructure architectures into manufacturing poses numerous engineering challenges such as selective deposition of SiGe on Si and ideal pattern transfer with minimal critical dimensional loss. The strategy here is to understand fundamentally interfacial phenomena occurring on SiGe surfaces. The approach utilizes in situ real time infrared and Raman spectroscopic techniques. The real time diagnostics provide a means to capture the dynamic SiGe surface response to deposition and etch precursors. In this regard, the detection sensitivity and the polarization dependence of attenuated-total-reflection Fourier transform infrared spectroscopy and attenuated-total-reflection surface enhanced Raman spectroscopy will be exploited. The two techniques will help distinguish sidewall surface phenomena from trench bottom phenomena during plasma etching of SiGe. It is also intended to extract the ion energy distribution function in etch plasmas from experimentally measured time-varying plasma and substrate potentials. Capacitive divider and Langmuir probes can measure these potentials. The distribution functions will be correlated to resulting etch profiles. The salient information gained from the comprehensive diagnostics is expected to bring improved understanding of deposition and etching mechanisms of SiGe as well as ion/neutral transport inside the SiGe trenches. The knowledge gained will also facilitate ideal pattern transfer, help realize novel applications of SiGe, and guide development of computational profile simulators. Three educational activities will be pursued: (1) develop new elective courses in semiconductor processing, (2) provide close mentorship and career counseling through research, and (3) initiate a high school outreach program. These educational activities will draw strongly from the research. Courses in chemical vapor deposition and plasma/surface diagnostics will be developed to provide students alternate venues to prepare for a career in the electronics industry or related research fields. In addition to graduate students, undergraduate students will actively be involved in the research. High school seniors will be aggressively recruited using the outreach program to inform prospective high school students of the research-oriented educational opportunities at UNM. The outreach program additionally serves to improve the percentage of high school students pursuing post-secondary education and particularly to increase the enrollment of Hispanic-descent students. The latter goal meets an institutional interest of UNM, a federally recognized Hispanic-serving institution.%%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The scope of the project will expose students to challenges in materials synthesis, processing, and characterization. An important feature of the project is the strong emphasis on education, and the integration of research and education. ***