The Development of Nanoelectromechanical Structures for GHz Oscillators and Other High Frequency Devices

GHz振荡器和其他高频器件的纳米机电结构的开发

• 批准号: 0100629
• 负责人: Richard Superfine
• 金额: $ 27万
• 依托单位: University of North Carolina at Chapel Hill
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2005-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0100629&HistoricalAwards=false
• 关键词: Development; Nanoelectromechanical; Structures; GHz; Oscillators

The increasing miniaturization of electronic devices has been the foundation of the electronics revolution. Similar trends ate being seen in the field of actuating devices. where the acronym MicroElectroMechanical Systems is quickly' being replaced at its leading edge by NanoElectroMechanical Systems (NEMS). The ultimate scate for such devices will be the atomic scale. Nanoscale engineered materials will the building blocks of such devices [I]. Among these materials. nanotubes (NTs) provide many of the necessary properties required for NFMS: their geometry, extraordinary mechanical properties [2-6] ( which will allow GI-Iz mechanical resonance), novel electronic properties (metallic, semiconducting) [7-9]. and novel interfacial properties (atomically smooth, low friction)110, llj. We have recently discovered the atomic scale features in both the motion (friction)[1 I] and electrical properties of nanotube contacts [12]. These measured changes in response at the atomic scale in the dynamic electrical contact between NTs allow for a host of novel devices. These include high frequency devices, where the modulated signal depends on the relative velocity of the sliding contact, to atomic scale linear encoders in which the relative movement of a system can be measured to within a unit cell spacing. A necessary technology in the deployment of NT based NEMS will be a batch-fabrication process which includes NT integration. One solution to this problem is through NT growth processes. in which catalyst material is patterned on a substrate to produce desired integrated NI' NEMS. Specifically, growth processes will have to be understood such that NTs of specific crystalline orientation, radius, and length can be grown in-plane within an integrated silicon based device structure. We propose a plan of research that combines both investigations into the basic mechanisms of novel NEMS devices, and growth techniques that make strides toward batch-fabrication of NT NEMS. The specific NEMS devices we have in mind exploit the atomic scale features of the dynamic contact between NT electrical leads, and the mechanical resonance properties of NTs. Ln our view, the idea of position and orientation dependence of electrical contacts is an aspect of NEMS devices that deserves attention. It is a unique property of the nanometer scale and should open up device applications that are unique to NEMS. In a micron scale contact, the transport properties are an average over many relative crystalline orientations of the contacting surfaces as well as defects etc. hi a nanometer scale contact. ncw behavior will be observed due to relative perfection and smoothness of the contacting surfaces [13] and thc ability to tune precisely the relative orientation of contacting atomic lattices. hi this case the atomic structure matters. We propose to create:1. Voltage to frequency converter. The (M1-lz-GI-Iz) driving signal will be convened to a signal with 1- 1000 times the input frequency depending on the input amplitude2. Gigahertz frequency mixer: Sum and difference frequencies will be generated from input M1-Iz signals3. Atomic resolution linear encoder in an integrated. submicron device.

电子设备的日益小型化已经成为电子革命的基础。在致动装置领域也看到了类似的趋势。其中首字母缩略词MicroElectroMechanical Systems在其前沿迅速被NanoElectroMechanical Systems（NEMS）所取代。这种装置的最终规模将是原子规模。纳米工程材料将是这种器件的基石[I]。在这些材料中。纳米管（NT）提供了NFMS所需的许多必要性质：它们的几何形状、非凡的机械性质[2-6]（这将允许GI-Iz机械共振）、新颖的电子性质（金属性、半导体性）[7-9]。和新颖的界面性质（原子级光滑、低摩擦）110，11 j。我们最近发现了纳米管接触的运动（摩擦）[1]和电学性质[12]中的原子尺度特征。这些测量到的在NT之间的动态电接触中在原子尺度上的响应变化允许一系列新颖的设备。这些包括高频设备，其中调制信号取决于滑动接触的相对速度，到原子尺度线性编码器，其中系统的相对运动可以在单位单元间距内测量。基于NT的NEMS部署的必要技术将是包括NT集成的批量制造过程。这个问题的一个解决方案是通过NT生长过程。其中催化剂材料在衬底上形成图案以产生所需的集成NI ′ NEMS。具体地，生长工艺将必须被理解为使得特定晶体取向、半径和长度的NT可以在基于集成硅的器件结构内面内生长。我们提出了一个计划的研究，结合了新的NEMS设备的基本机制的调查，和生长技术，使大步向批量制造NT NEMS。我们考虑的特定NEMS设备利用NT电引线之间的动态接触的原子尺度特征和NT的机械共振特性。在我们看来，电接触的位置和取向依赖性的想法是NEMS器件值得关注的一个方面。这是纳米尺度的一个独特属性，应该打开NEMS独有的器件应用。在微米级接触中，输运性质是接触表面的许多相对晶体取向以及纳米级接触中的缺陷等的平均值。由于接触表面[13]的相对完美性和光滑性以及精确调节接触原子晶格的相对取向的能力，将观察到NCW行为。在这种情况下，原子结构很重要。我们建议创建：1。 电压频率转换器。（M1-lz-GI-Iz）驱动信号将被转换为具有1- 1000倍输入频率的信号，这取决于输入幅度2。 千兆赫混频器：和频与差频将从输入M1-Iz信号3中产生。 原子分辨率线性编码器在一个集成。亚微米器件