Nanoelectromechanical resonators for qubit sensing

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Silicon spin-based qubits offer a promising platform for quantum computing in terms of scalability due to their compatibility with standard complementary metal-oxide semiconductor (CMOS) processes. However, one of the bottlenecks remains the readout of the qubits with current approaches relying on electrical readout methods that limit scalability. This project will aim to investigate the use of nanoelectromechanical resonators as readout devices for silicon spin-based qubits overcoming the potential limitations of existing approaches to provide a scalable readout platform. Nanoelectromechanical resonators have previously been employed as highly sensitive transduction elements for mass and charge. These resonators have typical dimensions on the order of a few microns on a side with minimum gap and thickness dimensions in the range of several hundred nanometres or less. To investigate the feasibility of employing these devices for qubit readout, the properties of these devices will be studied at low temperatures including energy dissipation, self-heating, and nonlinear behaviour. Rapid readout of nanomechanical response in order to achieve a SNR>1 in an integration time of 1 us or less will be pursued and a variety of electrical interfaces will be explored. Initial devices will be based on existing foundry-fabricated prototypes building on previous work within the research group. A particular focus will be on studying the nonlinear behaviour of NEMS resonators as a function of temperature including at low temperatures with a view towards investigating the possibility of utilizing nonlinear Duffing response to enhance sensitivity to charge on a resonator side gate.This project aligns with a number of EPSRC strategic priority areas in the fields of nanotechnology, quantum computing, information and communications technology, and semiconductors.