Electron Transport at Nanostructured Semiconductor Interfaces

纳米结构半导体界面的电子传输

• 批准号: 0111051
• 负责人: Mark Lonergan
• 金额: $ 30.6万
• 依托单位: University of Oregon Eugene
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2005-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0111051&HistoricalAwards=false
• 关键词: Electron; Transport; Nanostructured; Semiconductor; Interfaces

The Analytical and Surface Chemistry program supports the project by Professor Mark Lonergan of the University of Oregon on fundamental studies with current-sensing atomic force microscopy of nanostructured semiconductor/polymer interfaces. Well-defined nanostructures will be fabricated using e-beam lithography to imbed an array of gold metal dots into an n-InP | polypyrrole interface. Electron transfer barrier heights and transmission coefficients will be measured in and around the nanostructures with probe microscopy. The goals of this work include: (1) to understand charge depletion and charge transport at laterally nanostructured interfaces, (2) to evaluate the efficacy of barrier inhomogeneity models in explaining classic anomalies, and (3) to develop current-sensing atomic force microscopy as a characterization tool for buried semiconductor interfaces.The project addresses a long-standing problem in the understanding of metal-semiconductor contacts, namely, the failure of models to adequately describe electron transfer, a key feature of an electronic device, semiconductor electrochemistry, and semiconductor/metal contacts. Model failure may be due to surface heterogeneity. Experiments are proposed to create well-defined nanostructures at a semiconductor interface, and then to measure the electron transfer rate and its temperature dependence across the nanostructure. The results will be used to assess and correct models of the semiconductor interface, accounting for nanoscopic features at the interface.

分析和表面化学计划支持俄勒冈州大学的Mark Lonergan教授关于纳米结构半导体/聚合物界面的电流传感原子力显微镜基础研究的项目。 将使用电子束光刻法将金金属点阵列嵌入n-InP中，|聚吡咯界面 电子转移势垒的高度和透射系数将测量和周围的纳米结构与探针显微镜。 这项工作的目标包括：（1）了解横向纳米结构界面的电荷耗尽和电荷输运，（2）评估势垒不均匀性模型在解释经典异常方面的功效，以及（3）开发电流传感原子力显微镜作为掩埋半导体界面的表征工具。该项目解决了理解金属-半导体接触的长期问题，即，模型未能充分描述电子转移、电子器件的关键特征、半导体电化学和半导体/金属接触。 模型失效可能是由于表面异质性。 提出了在半导体界面处创建定义明确的纳米结构的实验，然后测量电子转移速率及其在纳米结构上的温度依赖性。 结果将被用来评估和校正模型的半导体接口，占纳米级功能的接口。