Research for Mixed Signal Electronic Technologies: A Joint Initiative Between NSF and SRC: Optimal Double-Gate MOSFET Structure for Mixed-signal Circuits

混合信号电子技术研究：NSF 和 SRC 的联合倡议：混合信号电路的最佳双栅极 MOSFET 结构

• 批准号: 0120328
• 负责人: Edwin Kan
• 金额: $ 15万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-10-01 至 2004-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0120328&HistoricalAwards=false
• 关键词: Research; Mixed; Signal; Electronic; Technologies

0120328KanThis proposal focuses on investigating innovative circuits based on double-gate MOSFET structures in the mixed-signal environment. The research efforts will establish a whole suite of knowledge on circuit design, device modeling, device design, and device fabrication for optimal performance and reliable operations in the deep submicron double-gate MOSFET technology. The comprehensive aspects from circuit to fabrication will not only provide a thorough understanding of the mixed-signal circuit design trade-off, but also will enable a balance development for graduate and undergraduate students participating in the program.Initial scaling studies on double-gate MOSFET device design has been performed by analytical solutions and the full-2D electrostatic solver. Design variables such as channel length, Si film thickness, gate oxide thickness, and contact work functions will be selected according to different benchmark in circuit applications. The static coupling between the two channels can be maximized or minimized, the dynamic coupling can be tuned to fit the circuit operations. Steep subthreshold slope including DIBL (drain-induced barrier lowering) consideration can be achieved through appropriate design consideration on quantum-mechanical effects. Novel Schottky S/D contact technology by the PI's group will be employed and evaluated in the overall device operations and circuit requirements. This modeling study will serve as the scaling guidelines for device and process design.Simultaneously with the fabrication process development of double-gate CMOS technology, pre-Si prediction of device parameters will be obtained from detailed modeling and scaling studies based on experimental measurement on the larger devices with similar structures. A scalable compact model for double-gate CMOS will be developed based on the preliminary analytical and numerical solutions. The predicted parameter set and the scalable device model will enable early analysis of mixed-signal circuit design, which will in turn give directives to fabrication process trade-off. Novel mixed-signal circuits will be constructed using the tight (no contact parasitic) and fast (down to 0.1ps, i.e., 10THz, limited by either the dielectric relaxation time or carrier transit time of carriers travelling between two channels) coupling between the two MOS structures.The PI expects that this task will result in new low-voltage circuit topologies that exploit both gates of the double-gate MOSFET to achieve high-performance operation with low power consumption. He also expects to determine a great deal about how the double-gate MOSFET structure can be optimized for different circuit applications.Innovative ClaimsNovel mixed-signal circuit functionality can be obtained from using the tight and fastcoupling between the two gates of the proposed structure.Methodology for device and circuit co-design can be demonstrated through double-gateMOSFET analog and mixed-signal circuits. Novel low-voltage, low-power mixed-signal circuits with high performance can be designed utilizing the unique double-gate structure of the proposed devices.

0120328 Kan本提案重点研究混合信号环境中基于双栅MOSFET结构的创新电路。这些研究工作将建立一整套关于电路设计、器件建模、器件设计和器件制造的知识，以实现深亚微米双栅MOSFET技术的最佳性能和可靠运行。从电路到制造的综合方面不仅将提供对混合信号电路设计权衡的透彻理解，还将使参与该课程的研究生和本科生能够平衡发展。双栅MOSFET器件设计的初步规模研究已经通过解析解和全2D静电解算器进行。在电路应用中，沟道长度、硅膜厚度、栅氧化层厚度、接触功函数等设计变量将根据不同的基准进行选择。可以最大化或最小化两个通道之间的静态耦合，可以调整动态耦合以适应电路操作。通过适当考虑量子力学效应，可以实现包括漏极诱导势垒降低(DIBL)在内的陡峭的亚阈值斜率。将采用PI集团的新型肖特基S/D触点技术，并在整体器件操作和电路要求方面进行评估。该模型研究将作为器件和工艺设计的定标指南。同时，随着双栅CMOS工艺的制造工艺的发展，基于相似结构的较大器件的实验测量，将通过详细的建模和定标研究来获得器件参数的预硅预测。基于初步的解析解和数值解，我们将建立一个可扩展的双栅CMOS紧凑型模型。预测的参数集和可扩展的器件模型将使混合信号电路设计的早期分析成为可能，这反过来将为制造工艺的权衡提供指导。新型混合信号电路将利用两种MOS结构之间的紧耦合(无接触寄生)和快耦合(低至0.1ps，即10THz，受限于两个通道之间传输的载流子的介电驰豫时间或载流子传输时间)来构建。PI期望这项任务将导致新的低压电路拓扑，该拓扑利用双栅MOSFET的两个栅极来实现低功耗的高性能操作。他还希望确定如何针对不同的电路应用优化双栅MOSFET结构。创新声明通过使用所建议结构的两个门之间的紧密和快速耦合，可以获得新颖的混合信号电路功能。通过双栅MOSFET模拟和混合信号电路，可以演示器件和电路联合设计的方法。利用所提出的器件独特的双栅结构，可以设计出新型的低电压、低功耗的高性能混合信号电路。