NER: Novel Applications Based on Attractive and Repulsive Electrostatic Forces in Nanoscale

NER：基于纳米级静电引力和排斥力的新应用

• 批准号: 0210743
• 负责人: Edwin Kan
• 金额: $ 8万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-15 至 2003-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210743&HistoricalAwards=false
• 关键词: NER; Novel; Applications; Based; Attractive

Novel Applications Based on Attractive and Repulsive Electrostatic Forces in NanoscaleThe focus of the proposed NER research is to establish an electrostatic interface between nanoelectronics and the biological molecular systems in the micron and nanometer scales. The main research actions include: 1. To seek concept demonstration for nanometer-to-micron-scale manipulation of the electrostatic attractive and repulsive forces through nonvolatile static charges controlled by CMOS/EEPROM (electrically erasable programmable read-only memory) devices.2. To establish the spatial and energy resolution limits of the electrostatic forces between CMOS and biological systems3. To establish the electrostatic interface between CMOS devices and the ambient electrolyte solution without chemical contamination in Si and dielectrics.4. To formulate realistic goals and implementation methods in the follow-on NIRT effort for building molecular recognition and actuation capabilities derived from nanoscale CMOS technology, if the NER efforts give promising results.This proposed NER investigation is unique in the sense that the nonvolatile static charges in CMOS EEPROM devices are employed at the interface, and hence the interaction electrostatic forces can be both attractive and repulsive. For molecular recognition and actuation, availability of both attractive and repulsive forces at interface is crucial for high selectivity and sensitivity.Two technology demonstrations will be established in the NER effort to investigate the scale and resolution of the electrostatic attractive and repulsive forces derivable from the CMOS/EEPROM devices. The first one is the micron-scale electrostatic tweezers. For electrostatic tweezers actions of pickup and drop, an electrostatic repulsive force is needed. This can be accomplished by forces induced from nonvolatile static charges. The second one is the nano-scale molecular recognition from surface attractive and repulsive forces. Nanometer-scale molecular recognition by complementary nonvolatile static charges can be achieved in floating nanocrystal EEPROM structures. The peripheral source/drain structures have alternative dopant types to facilitate complementary static charge injection. The control gate is partially implemented by the ground-plane back gate to expose the nanocrystals for electrostatic interaction with the ambient. Preliminary concepts for the micron-scale [1,2] and nano-scale [3-6] nonvolatile static charge control have already been experimentally demonstrated in the PI's group. The micron-scale control currently offers much faster charge reconfiguration (in milliseconds) than the nanoscale one (achieved by floating Si and metal nanocrystals with pixel accessibility inversely proportional to resolution due to peripheral contact constraints). Present efforts by the PI in funded research programs will be discussed in view of the relations with this NER proposal. A small addition to the existing educational outreach program will be presented. Rationale has been made to fit the proposed effort to the one-year span of the NER program. If the concept demonstration is successful, a NIRT proposal will be composed next year based on the preliminary modeling and experimental results.

基于吸引和排斥的静电力在纳米尺度上的新应用拟议中的NER研究的重点是在微米和纳米尺度上建立纳米电子和生物分子系统之间的静电界面。主要研究工作包括：1.寻求通过由电可擦除可编程只读存储器控制的非易失性静电电荷在纳米到微米尺度上操纵静电引力和排斥力的概念演示。建立生物系统和生物系统之间静电作用力的空间分辨率和能量分辨率极限。在没有硅和介质中化学污染的情况下，在CMOS器件和周围的电解液之间建立静电界面。为了在后续的NIRT工作中制定现实的目标和实现方法，以建立源自纳米级CMOS技术的分子识别和驱动能力，如果NER努力取得有希望的结果。该NER研究的独特之处在于，CMOSEEPROM器件中的非挥发性静电电荷被用于界面，因此相互作用的静电力既可能是吸引的，也可能是排斥的。对于分子识别和驱动，界面上吸引力和排斥力的可用性对于高选择性和高灵敏度是至关重要的。将建立两个技术演示，以努力研究可从CMOS/EEPROM器件获得的静电吸引力和排斥力的规模和分辨率。第一种是微米级的静电镊子。对于静电镊子的拾取和放下动作，需要一个静电斥力。这可以通过非易失性静电感应的力来实现。第二种是基于表面引力和排斥力的纳米尺度分子识别。在浮动纳米晶EEPROM结构中，利用互补的非易失性静电电荷可以实现纳米尺度的分子识别。外围源极/漏极结构具有可选的掺杂剂类型，以促进互补的静态电荷注入。控制栅部分地由接地面后栅实现，以暴露纳米晶体以与环境进行静电相互作用。微米级[1，2]和纳米级[3-6]非易失性静电电荷控制的初步概念已经在PI的小组中进行了实验演示。目前，微米级控制比纳米级控制提供更快的电荷重新配置(以毫秒为单位)(通过浮动硅和金属纳米晶体实现，由于外围接触限制，像素可访问性与分辨率成反比)。鉴于与NER提案的关系，将讨论PI目前在资助研究计划方面所做的努力。对现有教育推广计划的一小部分补充将被提出。提出的理由是使拟议的努力与国家教育方案的一年期限相适应。如果概念论证成功，明年将根据初步建模和实验结果编写NIRT提案。