NER: Nanoscale Electron Beam Stimulated Processing

NER：纳米级电子束刺激处理

• 批准号: 0210339
• 负责人: Philip Rack
• 金额: $ 9.97万
• 依托单位: University of Tennessee Knoxville
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-15 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210339&HistoricalAwards=false
• 关键词: NER; Nanoscale; Electron; Beam; Stimulated

This project was received in response to Nanoscale Science and Engineering initiative, NSF 01-157, category NER. The project will explore electron stimulated deposition and etching as a alternative technique to selectively deposit and etch nanoscopic features. The mechanisms and reaction kinetics for the electron beam stimulated growth and etch processes will be elucidated using standard precursor materials. Beam energy and current density measurements will be performed and the energy flow will be modeled at the near surface region to determine the contribution of thermal Joule heating versus electron dissociation of the precursor molecules. The effect of gas phase electron scattering, specimen charging, and secondary electron emission will be investigated to understand the minimum pixel size that can be realized for this nanoscale process.This project is a collaborative effort between scientists at the University of Tennessee (Philip D. Rack and David C. Joy) and North Carolina State University (Phillip Russell) and will investigate nanoscale materials manipulation with focused electron beams. The ability to manipulate materials at the nanoscale is critical for the nanotechnology revolution that is occurring. To intelligently design and or repair nanoscale devices requires techniques to selectively and nanoscopically deposit and remove material in a controllable fashion. Current techniques to selectively deposit or etch microscopic features utilize ion beam deposition and etching, laser ablative etching using far field and near field optics, and mechanical abrasion using a fine microtip. Of these techniques, focused ion beam techniques are probably the most mature technology that has been extended into the nanoscale. When using an ion beam to stimulate a deposition or etch process, the gallium ions get implanted into the substrate, which can significantly change the optical, electrical, or mechanical properties of the substrate. Charging inherent to the ion-solid interaction also causes proximity effects and can also lead to so-called "riverbed effects" which erodes nearby features when the heavy ion beam is scattered and induces sputtering. Electron beam stimulated deposition and etching is conceptually similar to the existing focused ion beam approach and has been shown to be a viable technique for depositing nanoscopic materials. The main advantages of using an electron beams versus ion beams are reduced contamination and smaller spot sizes.

该项目是在响应纳米科学和工程倡议，NSF 01-157，类别NER。 该项目将探索电子刺激沉积和蚀刻作为选择性存款和蚀刻纳米功能的替代技术。 电子束刺激的生长和蚀刻过程的机制和反应动力学将使用标准的前体材料来阐明。 将进行束能量和电流密度测量，并在近表面区域对能量流进行建模，以确定热焦耳加热对前体分子电子解离的贡献。 将研究气相电子散射、样品充电和二次电子发射的影响，以了解这种纳米级工艺可以实现的最小像素尺寸。Rack和大卫C.乔伊）和北卡罗来纳州州立大学（菲利普罗素），并将研究纳米材料操纵与聚焦电子束。 在纳米尺度上操纵材料的能力对于正在发生的纳米技术革命至关重要。 为了智能地设计和/或修复纳米级器件，需要以可控的方式选择性地和纳米级地存款和去除材料的技术。 选择性地存款或蚀刻微观特征的当前技术利用离子束沉积和蚀刻、使用远场和近场光学器件的激光烧蚀蚀刻以及使用精细微尖端的机械磨损。 在这些技术中，聚焦离子束技术可能是已经扩展到纳米级的最成熟的技术。 当使用离子束来刺激沉积或蚀刻工艺时，镓离子被注入到衬底中，这可以显著改变衬底的光学、电学或机械特性。 离子-固体相互作用所固有的充电也会引起邻近效应，并且还可能导致所谓的“河床效应”，当重离子束被散射并引起溅射时，河床效应会侵蚀附近的特征。 电子束激发沉积和蚀刻在概念上类似于现有的聚焦离子束方法，并且已被证明是用于沉积纳米级材料的可行技术。 与离子束相比，使用电子束的主要优点是减少污染和更小的斑点尺寸。