electron beam lithography tool for 3D-nanoscale extremely high frequency components

用于 3D 纳米级极高频元件的电子束光刻工具

• 批准号: 491044589
• 金额: --
• 依托单位: Lehrstuhl für Bauelemente der Höchstfrequenzelektronik
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2022
• 资助国家: 德国
• 起止时间: 2021-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/491044589?language=en
• 关键词: electron; beam; lithography; tool; 3D

3D nanoscale structures are at the foundation of state-of-the-art and future electronic and photonic extremely high frequency components for the terahertz range. Besides the atomic precision "built into" epitaxial semiconductor growth processes, an orthogonal lithographic structuring process is required to minimize critical areas and volumes in nanoscale devices, in particular to suppress parasitic capacitance and to reduce access resistance. This holds true for traditional device topologies based on epitaxial layer deposition, but also for novel epitaxial structures such as nanowires an devices based on 2D-materials. The definition of e.g. nanoscale electrodes is needed, along with nanometer-scale placement accuracy. The department "Components for High Frequence Electronics (BHE)" at UDE researches nanoscale semiconductor materials and processes to realize "beyond-fmax" Terahertz devices, funded among other programs through the SFB/TRR 196 MARIE. The focus is on own semiconductor material development with highest electron mobility, in particular indium phosphide and related materials, and on transistors and RF diodes built from these materials in the department's cleanroom facility. Since the growth and structuring is tightly coupled in the research process, the installation of a high performance nanoscale lithography in the own facility is needed to reach the current and future research goals. The method of choice is electron beam lithography (EBL). Commercially available EBL tools exhibit the required < 10 nm resolution combined with a placement accuracy below 10 nm. Of high importance is the large depth of focus which is available in EBL, which allows for the processing of pre-structured and shapes of irregular height. When opting for 100 keV electron energy, the proximity error can be well corrected even for materials such as indium phosphide which exhibit relatively high backscattering. Five additional research groups in Duisburg have expressed a need for this lithographic instrument within the faculty of engineering and the faculty of physics, each researching state-of-the-art topics on the nanoscale with significant horizon. The five research groups take part in this proposal. A high synergetic effect in procuring a high-resolution EBL tool is therefore expected. The requested tool shall be installed in the cleanroom facility of UDE's Center for Semiconductor Technology, in a location particularly suited for high resolution lithography (with very low building vibrations, optimized airflow and low electromagnetic fields).

3D纳米结构是太赫兹范围内最先进的和未来的电子和光子极高频组件的基础。除了“内置于”外延半导体生长工艺中的原子精度外，还需要一种正交光刻结构工艺来最小化纳米级器件中的关键面积和体积，特别是为了抑制寄生电容和降低访问电阻。这适用于基于外延层沉积的传统器件拓扑，也适用于新型外延结构，如纳米线和基于2D材料的器件。例如，需要纳米级电极的定义，以及纳米级的放置精度。UDE的“高频电子元件(BHE)”系研究纳米级半导体材料和工艺，以实现“Beyond-FMAX”太赫兹器件，资金来自SFB/TRR 196 Marie等项目。重点是开发电子迁移率最高的半导体材料，特别是磷化铟和相关材料，以及在该部门的净化室设施中用这些材料制造的晶体管和射频二极管。由于生长和结构在研究过程中是紧密耦合的，为了达到当前和未来的研究目标，需要在自己的设施中安装高性能的纳米级光刻设备。选择的方法是电子束光刻(EBL)。商业上可用的EBL工具显示出所需的&lt；10 nm分辨率和低于10 nm的放置精度。非常重要的是EBL提供的大焦深，允许处理预构的和不规则高度的形状。当选择100keV电子能量时，即使对于后向散射相对较高的磷化铟这样的材料，邻近误差也可以得到很好的修正。杜伊斯堡的另外五个研究小组已经表示，工程学院和物理学院需要这种光刻仪器，每个小组都在研究纳米尺度上的最新课题，并具有重要的视野。这五个研究小组参与了这项提案。因此，预计在采购高分辨率的EBL工具方面会产生高度的协同效应。所要求的工具应安装在UDE半导体技术中心的净室设施中，位置特别适合高分辨率光刻(具有非常低的建筑物振动、优化的气流和低电磁场)。