Development of a Single Electron Scanning Tunneling Microscope

该IMR奖支持一种基于静电力的单电子扫描隧道显微镜的仪器开发。在以前的工作中，单电子隧穿事件从一个特殊的扫描探针尖端被静电力清楚地检测到。然而，单电子的表面成像尚未实现。该研究项目的重点是开发以原子尺度空间分辨率在表面或其附近对单个、电隔离的电子状态进行成像所需的方法。该方法将包括了解振荡原子力显微镜（AFM）悬臂在大力梯度下的力学行为，探索电荷转移和电压依赖性的影响，优化和开发单电子测量的力检测系统，以及开发单电子成像时高度控制的方法。成像和表征表面附近电隔离、局部化、电子状态（标准扫描隧道显微镜无法检测到）的能力是一项基本的新能力。该方法提供了对电绝缘材料和隔离纳米级系统的原子尺度电子特性的详细理解。该IMR奖支持一种基于静电力的单电子扫描隧道显微镜的仪器开发。在以前的工作中，单电子隧穿事件从一个特殊的扫描探针尖端被静电力清楚地检测到。然而，单电子的表面成像尚未实现。该研究项目的重点是开发以原子尺度空间分辨率在表面或其附近对单个、电隔离的电子状态进行成像所需的方法。该方法将包括了解振荡原子力显微镜（AFM）悬臂在大力梯度下的力学行为，探索电荷转移和电压依赖性的影响，优化和开发单电子测量的力检测系统，以及开发单电子成像时高度控制的方法。成像和表征表面附近电隔离、局部化、电子状态（标准扫描隧道显微镜无法检测到）的能力是一项基本的新能力。该方法提供了对电绝缘材料和隔离纳米级系统的原子尺度电子特性的详细理解。

This IMR award supports an instrument development of an electrostatic force based Single Electron Scanning Tunneling Microscope. In previous work, single electron tunneling events from a special scanning probe tip have been clearly detected by electrostatic force. However, no surface imaging with the single electrons has yet been achieved. This research program focuses upon developing the methods needed to image individual, electrically isolated electron states at or near surfaces with atomic scale spatial resolution. The methodology will include understanding the mechanical behavior of oscillating atomic force microscope (AFM) cantilevers under large force gradients, exploring the effects of charge transfer and voltage dependence, optimizing and developing a force detection system for the single electron measurements and developing a method for height control while imaging with single electrons. The ability to image and characterize electrically isolated, localized, electronic states near surfaces (undetectable with the standard Scanning Tunneling Microscope) is a fundamental, new capability. The approach is to provide a detailed understanding of the atomic scale electronic properties of electrically insulating materials and isolated nanometer scale systems.%%%This IMR award supports an instrument development of an electrostatic force based Single Electron Scanning Tunneling Microscope. In previous work, single electron tunneling events from a special scanning probe tip have been clearly detected by electrostatic force. However, no surface imaging with the single electrons has yet been achieved. This research program focuses upon developing the methods needed to image individual, electrically isolated electron states at or near surfaces with atomic scale spatial resolution. The methodology will include understanding the mechanical behavior of oscillating atomic force microscope (AFM) cantilevers under large force gradients, exploring the effects of charge transfer and voltage dependence, optimizing and developing a force detection system for the single electron measurements and developing a method for height control while imaging with single electrons. The ability to image and characterize electrically isolated, localized, electronic states near surfaces (undetectable with the standard Scanning Tunneling Microscope) is a fundamental, new capability. The approach is to provide a detailed understanding of the atomic scale electronic properties of electrically insulating materials and isolated nanometer scale systems.