Development of a Single Electron Scanning Tunneling Microscope

该IMR奖项支持基于静电力的单电子扫描隧道显微镜的仪器开发。 在之前的工作中，来自特殊扫描探针尖端的单电子隧穿事件已通过静电力清楚地检测到。 然而，还没有实现具有单电子的表面成像。 该研究计划的重点是开发所需的方法，以原子尺度的空间分辨率在表面或附近成像单个电隔离电子状态。 该方法将包括理解大力梯度下振荡原子力显微镜（AFM）杠杆的机械行为，探索电荷转移和电压依赖性的影响，优化和开发用于单电子测量的力检测系统，并开发用于单电子成像时高度控制的方法。 成像和表征表面附近的电隔离、局部化、电子状态的能力（用标准扫描隧道显微镜无法检测到）是一种基本的新能力。 该方法是提供一个详细的了解原子尺度的电绝缘材料和孤立的纳米尺度系统的电子特性。该IMR奖项支持基于静电力的单电子扫描隧道显微镜的仪器开发。 在以前的工作中，单电子隧穿事件从一个特殊的扫描探针针尖已清楚地检测到静电力。 然而，还没有实现具有单电子的表面成像。 该研究计划的重点是开发所需的方法，以原子尺度的空间分辨率在表面或附近成像单个电隔离电子状态。 该方法将包括理解大力梯度下振荡原子力显微镜（AFM）杠杆的机械行为，探索电荷转移和电压依赖性的影响，优化和开发用于单电子测量的力检测系统，并开发用于单电子成像时高度控制的方法。 成像和表征表面附近的电隔离、局部化、电子状态的能力（用标准扫描隧道显微镜无法检测到）是一种基本的新能力。 该方法是提供一个详细的了解原子尺度的电绝缘材料和孤立的纳米尺度系统的电子特性。

This IMR award supports an instrument development of an electrostatic force based Single Electron Scanning Tunneling Microscope. In previous work, single electron tunneling events from a special scanning probe tip have been clearly detected by electrostatic force. However, no surface imaging with the single electrons has yet been achieved. This research program focuses upon developing the methods needed to image individual, electrically isolated electron states at or near surfaces with atomic scale spatial resolution. The methodology will include understanding the mechanical behavior of oscillating atomic force microscope (AFM) cantilevers under large force gradients, exploring the effects of charge transfer and voltage dependence, optimizing and developing a force detection system for the single electron measurements and developing a method for height control while imaging with single electrons. The ability to image and characterize electrically isolated, localized, electronic states near surfaces (undetectable with the standard Scanning Tunneling Microscope) is a fundamental, new capability. The approach is to provide a detailed understanding of the atomic scale electronic properties of electrically insulating materials and isolated nanometer scale systems.%%%This IMR award supports an instrument development of an electrostatic force based Single Electron Scanning Tunneling Microscope. In previous work, single electron tunneling events from a special scanning probe tip have been clearly detected by electrostatic force. However, no surface imaging with the single electrons has yet been achieved. This research program focuses upon developing the methods needed to image individual, electrically isolated electron states at or near surfaces with atomic scale spatial resolution. The methodology will include understanding the mechanical behavior of oscillating atomic force microscope (AFM) cantilevers under large force gradients, exploring the effects of charge transfer and voltage dependence, optimizing and developing a force detection system for the single electron measurements and developing a method for height control while imaging with single electrons. The ability to image and characterize electrically isolated, localized, electronic states near surfaces (undetectable with the standard Scanning Tunneling Microscope) is a fundamental, new capability. The approach is to provide a detailed understanding of the atomic scale electronic properties of electrically insulating materials and isolated nanometer scale systems.