GOALI: High Permeability Ferrite Cores for Micro-Inductors
GOALI:用于微电感器的高磁导率铁氧体磁芯
基本信息
- 批准号:0219379
- 负责人:
- 金额:$ 30万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2002
- 资助国家:美国
- 起止时间:2002-09-01 至 2005-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Magnetic materials have unique properties that are driving their integration with microelectronic and micro-electro-mechanical (MEM) devices. Various microfabrication technologies are being pursued aggressively. In this proposal, it is proposed to develop a novel technique to deposit oxide magnetic material films applicable to micro magnetic devices. The magnetic materials chosen for the proposed study are low coercivity soft ferrites (manganese zinc and nickel zinc ferrites) with initial permeability ranging from 1,000-10,000. The films will find extensive applications in micro inductors, micro transformers and other on chip magnetic devices. These films will be deposited by electrophoresis i.e electrodeposition from nano to micron size ferrite particles suspended in a solution. The ferrite powders will be prepared by jet milling technique in conjunction with a ferrite company Ferronics and the Center for Advanced Ceramic Technology (CACT) at Alfred University.An electrochemical process will be developed to get uniform deposition of magnetic films on silicon wafers. The films will be characterized for their magnetic properties, thickness uniformity and adhesion. Subsequently, a lithographic technique will be developed to pattern ferrite films to form the cores of micro inductors. Fundamental investigations will be made to understand the effect of particle size distribution and electrodeposition in confined regions on the film morphology by modeling the deposition process. The magnetic properties will be measured on these films and structures. These film structures will be integrated with copper micro-inductors on semiconductor substrates. Inductors will be designed and modeled analytically and using an electromagnetic software. The fabrication will be carried out utilizing the IC fabrication facility at Rochester Institute of Technology (RIT). Electrical measurements such as inductance and Q-factor will be done using network analyzer and impedance meters. The optimized structures will then be fabricated with circuitry on silicon wafers.This will be a multidisciplinary experimental and theoretical research program between Microelectronic Engineering, Electrical Engineering, Physics and Electrochemistry. In addition, there is support from industry and the CACT center. The project will enable fabrication of on-chip magnetic components for micro-inductors and micro magnetics. The proposed process can also be utilized to integrate other magnetic materials such as hard ferrites and microwave ferrites.
磁性材料具有独特的特性,这些特性推动了它们与微电子和微机电(MEM)器件的集成。各种微细加工技术正被积极地追求。本研究提出发展一种新的存款氧化物磁性材料薄膜技术,以应用于微磁性元件。为拟议的研究选择的磁性材料是低磁导率软磁铁氧体(锰锌和镍锌铁氧体),其初始磁导率范围为1,000 - 10,000。 该薄膜在微电感、微变压器等片上磁性器件中具有广泛的应用前景。这些薄膜将通过电泳沉积,即从悬浮在溶液中的纳米至微米尺寸的铁氧体颗粒进行电沉积。铁氧体粉末将通过与铁氧体公司Ferronics和阿尔弗雷德大学先进陶瓷技术中心(CACT)合作的喷射研磨技术制备。将开发一种电化学工艺,以在硅片上均匀沉积磁性薄膜。薄膜的特点是它们的磁性,厚度均匀性和附着力。随后,将发展光刻技术来图案化铁氧体膜以形成微电感器的芯。通过模拟沉积过程,将进行基本的研究,以了解颗粒尺寸分布和电沉积在受限区域对膜形态的影响。将在这些薄膜和结构上测量磁性。这些薄膜结构将与半导体衬底上的铜微电感集成。电感器将使用电磁软件进行分析设计和建模。将利用罗切斯特理工学院(RIT)的IC制造工厂进行制造。将使用网络分析仪和阻抗计进行电感和Q因数等电气测量。这将是一个微电子工程、电气工程、物理学和电化学之间的多学科实验和理论研究项目。此外,还有来自行业和CACT中心的支持。该项目将使微电感器和微磁性元件的片上磁性元件的制造成为可能。所提出的工艺也可用于集成其他磁性材料,如硬铁氧体和微波铁氧体。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Santosh Kurinec其他文献
The positioning of biofuel cells-based biobatteries for net-zero energy future
基于生物燃料细胞的生物电池在实现净零能源未来中的定位
- DOI:
10.1016/j.est.2023.107919 - 发表时间:
2023-11-20 - 期刊:
- 影响因子:9.800
- 作者:
Santanu Patra;Jaya Verma;Yogendra K. Mishra;Santosh Kurinec;Qingyuan Wang;Mikael Syväjärvi;Ashutosh Tiwari - 通讯作者:
Ashutosh Tiwari
Analyzing residual stress in bilayer chalcogenide Ge<sub>2</sub>Se<sub>3</sub>/SnTe films
- DOI:
10.1016/j.tsf.2009.04.017 - 发表时间:
2009-10-30 - 期刊:
- 影响因子:
- 作者:
Archana Devasia;Feiming Bai;Morgan Davis;Kristy A. Campbell;Surendra Gupta;Santosh Kurinec - 通讯作者:
Santosh Kurinec
Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping
利用自组装单层掺杂将镓引入硅和薄膜多晶硅中
- DOI:
10.1016/j.matlet.2022.132839 - 发表时间:
2022 - 期刊:
- 影响因子:3
- 作者:
Carolyn Spaulding;Alex Taylor;Scott Williams;Glenn Packard;Gabriel Curvacho;Santosh Kurinec - 通讯作者:
Santosh Kurinec
Santosh Kurinec的其他文献
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{{ truncateString('Santosh Kurinec', 18)}}的其他基金
Planning Grant: Engineering Research Center for Micro Ferroelectronics for Devices and Systems: microFeDS
规划资助:微铁电子器件与系统工程研究中心:microFeDS
- 批准号:
2123863 - 财政年份:2021
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
EAGER: Self Assembled Monolayer Doping for Advanced 3D Nano & Flexible Semiconductor Structures
EAGER:用于先进 3D 纳米的自组装单层掺杂
- 批准号:
1842635 - 财政年份:2018
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
SKAUST-NSF Research Conference on Electronic Materials, Devices and Systems for a Sustainable Future March 2016 Thuwal, Saudi Arabia
SKAUST-NSF 可持续未来电子材料、设备和系统研究会议 2016 年 3 月 沙特阿拉伯图瓦尔
- 批准号:
1560843 - 财政年份:2016
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
EAGER: Ferroelectric Memristive Devices Emulating Synapses in Subcortical Information Processors
EAGER:铁电忆阻器件模拟皮层下信息处理器中的突触
- 批准号:
1445386 - 财政年份:2014
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Semiconductor Technology 2020. The Workshop will be held in Rochester NY on May 14-16, 2007.
2020 年半导体技术。研讨会将于 2007 年 5 月 14 日至 16 日在纽约罗切斯特举行。
- 批准号:
0733611 - 财政年份:2007
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Leading Microelectronic Engineering Education to New Horizons
引领微电子工程教育新视野
- 批准号:
0530575 - 财政年份:2005
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Integration of Magnetic Tunnel Junctions with Quantum Negative Differential Resistance Devices
磁隧道结与量子负微分电阻器件的集成
- 批准号:
0501460 - 财政年份:2005
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
Undergraduate Co-op Based Concentration Curriculum in MEMs and Nanotechnology
基于合作社的本科 MEM 和纳米技术专业课程
- 批准号:
0342703 - 财政年份:2003
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
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