Synthetic Routes to Main-Group Inorganic Solids
主族无机固体的合成路线
基本信息
- 批准号:0221993
- 负责人:
- 金额:$ 35.07万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2002
- 资助国家:美国
- 起止时间:2002-12-01 至 2006-11-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project focuses on the synthesis of novel solid-state inorganic materials, including epitaxial growth of device-quality thin-film heterostructures and nanostructures. These materials will have applications in microelectronics, optoelectronics, and refractory ceramics. A unique aspect of this effort in materials design and synthesis is the ability to build in precise atomic arrangements primarily via molecular chemistry so as to overcome thermodynamic impediments arising from differences in atomic sizes, electronic level filling and electronegativities of constituent atoms and thereby form new and metastable materials that cannot be obtained by conventional routes. The range of target materials includes: (a) New semiconductors in the C-Si-Ge-Sn system, which are intended for integration of Si-based microelectronics with optical components; (b) Quaternary wide bandgap optical materials based on covalent carbides and nitrides of the main group; (c) Si based superhard dielectric materials and diamond-like compounds comprising light elements. The electronic structure, band structure, optical, dielectric, mechanical and structural properties of these materials are thoroughly investigated by experimental as well as theoretical methods. The work is well suited to provide broad preparation and state-of-the-art skills to undergraduate, graduate and postdoctoral student researchers in synthetic solid-state chemistry and materials science.This research has significant potential for high impact in important areas of national interest including areas such as new optical, semiconducting, and superhard/ultrastrong materials, which are of interest to microelectronics and defense industries. The research provides fundamental knowledge in novel device chemistry and physics, and thus makes important contributions to emerging and future technologies such as, high-speed computers, full color displays and communication and detection systems. In addition to significant research and technological accomplishments which include US and international patents, the work provides graduate and postdoctoral training to new generations of scientists and engineers in the preparation and processing of new materials and in the art of chemical vapor deposition, which is a vital field in the microelectronics industry. Collaborations are ongoing with local industries to develop materials for use in silicon-based high-speed electronic devices as well as new generations of solid-state lighting systems that are energy efficient and environmentally safe. The group maintains international collaborations and outreach with researchers in Germany, Norway, Mexico, and the Czech Republic.
该项目专注于新型固态无机材料的合成,包括器件质量薄膜异质结构和纳米结构的外延生长。这些材料将在微电子、光电子和耐火陶瓷等领域得到应用。这项材料设计和合成工作的一个独特方面是能够主要通过分子化学构建精确的原子排列,从而克服由于原子尺寸、电子能级填充和组成原子的电负性差异而产生的热力学障碍,从而形成传统途径无法获得的新的亚稳态材料。 目标材料范围包括: (a) C-Si-Ge-Sn 系统中的新型半导体,旨在用于硅基微电子与光学元件的集成; (b) 基于主族共价碳化物和氮化物的四元宽带隙光学材料; (c)硅基超硬介电材料和包含轻元素的类金刚石化合物。 通过实验和理论方法对这些材料的电子结构、能带结构、光学、介电、机械和结构性能进行了深入研究。 这项工作非常适合为合成固态化学和材料科学领域的本科生、研究生和博士后研究人员提供广泛的准备和最先进的技能。这项研究在国家利益的重要领域具有巨大的影响力,包括微电子和国防工业感兴趣的新型光学、半导体和超硬/超强材料等领域。 该研究提供了新型器件化学和物理学的基础知识,从而为高速计算机、全彩显示器以及通信和检测系统等新兴和未来技术做出了重要贡献。 除了包括美国和国际专利在内的重大研究和技术成就外,这项工作还为新一代科学家和工程师提供新材料制备和加工以及化学气相沉积技术方面的研究生和博士后培训,这是微电子行业的一个重要领域。 目前正在与当地工业合作开发用于硅基高速电子设备以及节能和环境安全的新一代固态照明系统的材料。该小组与德国、挪威、墨西哥和捷克共和国的研究人员保持着国际合作和外展。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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John Kouvetakis其他文献
Synthesis and optical properties of Sn-rich Ge<sub>1 – <em>x</em> – <em>y</em></sub>Si<sub><em>x</em></sub>Sn<sub><em>y</em></sub> materials and devices
- DOI:
10.1016/j.tsf.2013.08.043 - 发表时间:
2014-04-30 - 期刊:
- 影响因子:
- 作者:
Chi Xu;Richard T. Beeler;Liying Jiang;James D. Gallagher;Ruben Favaro;José Menéndez;John Kouvetakis - 通讯作者:
John Kouvetakis
Electrical characterization and deep-level transient spectroscopy of Ge<sub>0.873</sub>Si<sub>0.104</sub>Sn<sub>0.023</sub> photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
- DOI:
10.1016/j.tsf.2018.03.071 - 发表时间:
2018-05-31 - 期刊:
- 影响因子:
- 作者:
Buguo Wang;Z.-Q. Fang;Bruce Claflin;David Look;John Kouvetakis;Yung Kee Yeo - 通讯作者:
Yung Kee Yeo
John Kouvetakis的其他文献
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{{ truncateString('John Kouvetakis', 18)}}的其他基金
IMR: Acquisition of a Multi-purpose High Resolution X-ray Diffraction User Facility for Materials Research and Education
IMR:收购用于材料研究和教育的多用途高分辨率 X 射线衍射用户设施
- 批准号:
0526604 - 财政年份:2005
- 资助金额:
$ 35.07万 - 项目类别:
Standard Grant
Acquisition of an Infrared Ellipsometer for Materials Research and Student Training
采购红外椭偏仪用于材料研究和学生培训
- 批准号:
0315760 - 财政年份:2003
- 资助金额:
$ 35.07万 - 项目类别:
Standard Grant
NER: Synthesis of Nanoscale Structures of New Direct Bandgap Semiconductors
NER:新型直接带隙半导体纳米级结构的合成
- 批准号:
0304362 - 财政年份:2003
- 资助金额:
$ 35.07万 - 项目类别:
Standard Grant
Novel Synthetic Routes to Main Group Inorganic Solids
主族无机固体的新合成路线
- 批准号:
9902417 - 财政年份:1999
- 资助金额:
$ 35.07万 - 项目类别:
Continuing Grant
REU Site: Undergraduate Teacher Training in Materials Synthesis and Processing
REU 网站:材料合成与加工本科教师培训
- 批准号:
9619834 - 财政年份:1997
- 资助金额:
$ 35.07万 - 项目类别:
Continuing Grant
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