NER: Synthesis of Nanoscale Structures of New Direct Bandgap Semiconductors

NER：新型直接带隙半导体纳米级结构的合成

• 批准号: 0304362
• 负责人: John Kouvetakis
• 金额: $ 10万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2005-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0304362&HistoricalAwards=false
• 关键词: NER; Synthesis; Nanoscale; Structures; New

We propose to conduct exploratory research on the fabrication of self-assembled nanometer-scale structures of new classes of semiconductors with direct tunable bandgaps in the UV/visible and infrared spectral regions.A major part of the work will focus on the growth of nanoscale sized structures of a completely new semiconductor system in the XCZN family where X is a group IV element (Si, Ge, Sn) and Z is a group III metal (Al, Ga, In). Specifically, these structures are quantum dots and pillars of the quaternary wideband gap material (GeC) 1-x (GaN) x with an adjustable bandgap between 1.6 and 3.3 eV. These materials are created directly on Si via suitable buffer layers utilizing the vapor-liquid-solid (VLS) mechanism, which provides flexibility of fine-tuning the size and spatial distributions of the nanostructures. An important objective of this work is to integrate (GeC) 1-x(GaN)x and related optical alloys with Si technologies so that their full potential can be realized as commercially viable materials.The research program also covers the synthesis of infrared nanostructures in the Si-Ge-Sn system with tunable electronic and structural properties. These materials include Ge1-xSnx quantum dots as well as related (SiGe) 1-xSnx and (Si4Ge) 1-xSnx nanostructures created directly on silicon substrates. The novelty in this case is the direct-bandgap nature of these Si-based systems. The electronic structure and optical properties will be thoroughly studied by spectroscopic ellipsometry, Raman microprobe, photoluminescence, cathodoluminescence, transmission IR spectroscopy and electron energy loss spectroscopy. Structural characterization involving high resolution electron microscopy, ion channeling (RBS), high resolution x-ray diffraction, low energy electron microscopy (LEEM) and atomic force microscopy are used extensively to provide rapid feedback about the quality of the structure and morphology of the nanostructures, thus ultimately leading to better design of the synthetic pathways.The broader impact of the proposed activity is to benefit undergraduates in chemistry, physics and materials science, by involving them in the research and discovery process of creating novel nanostructures of new and useful semiconductor materials. These students, including members of underrepresented groups, will also be exposed to the industrial environment at local microelectronic and optoelectronic laboratories in order to gain first-hand knowledge and an in-depth appreciation of the technical innovations in semiconductor and nanoscience research

本论文的主要工作是探索性地制备具有紫外/可见光和红外带隙可调的新型半导体自组装纳米结构，其中X是第IV族元素的XCZN系列半导体纳米结构在一个实施方案中，所述金属是第三族金属（Si、Ge、Sn），并且Z是第三族金属（Al、Ga、In）。具体地，这些结构是四元宽带带隙材料（GeC）1-x（GaN）x的量子点和柱，其具有在1.6和3.3eV之间的可调节带隙。这些材料通过合适的缓冲层利用气-液-固（VLS）机制直接在Si上产生，这提供了微调纳米结构的尺寸和空间分布的灵活性。这项工作的一个重要目标是将（GeC）1-x（GaN）x和相关的光学合金与Si技术结合起来，使它们的全部潜力能够实现作为商业上可行的材料。研究计划还包括在Si-Ge-Sn系统中合成具有可调电子和结构特性的红外纳米结构。这些材料包括直接在硅衬底上产生的Ge 1-xSnx量子点以及相关的（SiGe）1-xSnx和（Si 4Ge）1-xSnx纳米结构。在这种情况下的新奇是这些Si基系统的直接带隙性质。利用椭圆偏振光谱、拉曼探针、光致发光、阴极发光、透射红外光谱和电子能量损失谱等方法对配合物的电子结构和光学性质进行了深入的研究。涉及高分辨率电子显微镜、离子沟道（RBS）、高分辨率X射线衍射、低能电子显微镜（LEEM）和原子力显微镜的结构表征被广泛用于提供关于纳米结构的结构和形态的质量的快速反馈，从而最终导致合成途径的更好设计。拟议活动的更广泛影响是使化学专业的本科生受益，物理学和材料科学，让他们参与研究和发现过程，创造新的和有用的半导体材料的新纳米结构。这些学生，包括代表性不足的群体的成员，也将接触到当地微电子和光电实验室的工业环境，以获得第一手知识，并深入了解半导体和纳米科学研究的技术创新