Crystal-Field Engineering of Transition Metal Doped Chalcogenide Laser Materials

过渡金属掺杂硫族化物激光材料的晶体场工程

• 批准号: 0301951
• 负责人: Uwe Hommerich
• 金额: $ 25.5万
• 依托单位: Hampton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0301951&HistoricalAwards=false
• 关键词: Crystal; Field; Engineering; Transition; Metal

This project addresses new dopant-host combinations of transition metal (TM) doped II-VI semi-conductors to extend current solid-state laser wavelength coverage. Materials include TM (Cr, Fe, Co) doped Cd1-xRxTe, with R being either a IIa (Be, Mg, Ca, Sr, Ba) or IIb (Zn, Hg) ele-ment. The composition of the host will be varied in order to modify crystal-field effects on opti-cal and laser properties of TM ions. The proposed materials will be grown by a Bridgman tech-nique at Hampton University, and collaboration with industrial partners at Brimrose Corporation of America will provide additional samples. All materials will be characterized through tempera-ture dependent transmission spectroscopy, steady-state and time-resolved emission studies, and laser performance studies. The spectroscopic results will be modeled within the framework of crystal field theory to derive crystal-field parameters, electron-phonon coupling strengths, and emission quenching activation energies. The results of the modeling will be used to derive struc-ture- property relations, which can guide the optimization of selected materials to achieve better laser performance. The project addresses fundamental research issues associated with electronic/photonic materials having technological relevance. The multi-disciplinary nature of the project enhances the quality of education in several science and engineering disciplines at Hampton University. The research will be incorporated in the training of students seeking degrees in physics, chemis-try, chemical engineering, and electrical engineering. Educational efforts include: (1) increase of students participating in research projects, (2) continuation and extension of an industrial intern-ship program, and (3) outreach activities. This program is expected to increase the skilled work-force in an important field of optoelectronics and lasers with a special emphasis on enhancing the participation of under-represented minorities.

该项目致力于过渡金属（TM）掺杂的II-VI半导体的新掺杂剂-主体组合，以扩展当前固态激光器的波长覆盖范围。材料包括TM（Cr，Fe，Co）掺杂的Cd_（1-x）R_xTe，其中R为IIa（Be，Mg，Ca，Sr，Ba）或IIb（Zn，Hg）元素。为了改变晶体场效应对TM离子的光学和激光性质的影响，将改变基质的组成。拟议中的材料将由汉普顿大学的布里奇曼技术公司生产，与美国布里姆罗斯公司的工业合作伙伴合作将提供更多的样品。所有材料将通过随温度变化的透射光谱、稳态和时间分辨发射研究以及激光性能研究进行表征。光谱结果将在晶体场理论的框架内建模，以获得晶体场参数，电子-声子耦合强度和发射猝灭激活能。模拟结果将用于推导结构-性能关系，从而指导所选材料的优化，以获得更好的激光性能。该项目涉及与具有技术相关性的电子/光子材料相关的基础研究问题。该项目的多学科性质提高了汉普顿大学几个科学和工程学科的教育质量。该研究将纳入物理，化学，化学工程和电气工程学位的学生的培训。教育工作包括：（1）增加学生参与研究项目，（2）继续和扩大工业实习计划，（3）推广活动。该计划预计将增加光电子和激光这一重要领域的熟练劳动力，特别强调加强代表性不足的少数民族的参与。