课题基金 / 基金详情

EAGER: Development of novel wide-gap semiconductors for nuclear detection and IR photonics

EAGER: Development of novel wide-gap semiconductors for nuclear detection and IR photonics
EAGER:开发用于核探测和红外光子学的新型宽禁带半导体
批准号:
1649150
负责人:
Uwe Hommerich
金额:
$25.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-08-15 至 2019-07-31

项目摘要

项目成果

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中文摘要
翻译
美国国家科学基金会使用探索性研究早期概念补助金(EARGER)资助机制,支持未经检验但可能具有变革性的研究想法或方法的早期探索性工作。这个渴望的项目之所以被授予,是因为在亲爱的同事信NSF 16-080中,邀请来自历史悠久的黑人学院和大学的提倡者提交建议,以加强该机构教师的研究能力。汉普顿大学的该项目旨在探索用于多功能应用的三元金属卤化物,特别是用于核辐射探测和红外固态增益介质。如果该项目成功,它将为各种应用开发具有更好功能的新型材料,并产生重大的行业影响。该项目由数学和物理科学局共同资助。提出了基于三元金属卤化物的宽禁带化合物半导体晶体在核辐射探测和红外光子学中的应用。在这个迫切的项目中,将对金属卤化物的材料制备和块体晶体生长进行探索性研究。建议的半导体还将在红外固态增益介质中应用稀土掺杂进行生长。工作包括:候选材料的合成;提纯研究和大块晶体生长实验;提纯晶体的稀土掺杂;以及应用于核辐射探测和长波红外增益介质的材料表征和建模。拟议的EIGER项目的探索性和未经测试的方面在于,试图将金属卤化铅独特的材料性质结合起来,用于具有不同物理机制的两个重要应用。将详细研究缺陷和杂质对这些材料的光学和电学性能的作用,作为温度和元素组成的函数。材料净化和控制生长的大块晶体中的缺陷/杂质水平将是获得影响可能的器件性能的结构-性质关系的关键。
英文摘要
The National Science Foundation uses the Early-concept Grants for Exploratory Research (EAGER) funding mechanism to support exploratory work in its early stages on untested, but potentially transformative, research ideas or approaches. This EAGER project was awarded as a result of the invitation in the Dear Colleague Letter NSF 16-080 to proposers from Historically Black Colleges and Universities to submit proposals that would strengthen research capacity of faculty at the institution. The project at Hampton University aims to explore ternary metal halides for multi-functional applications, in particular for nuclear radiation detection and infrared solid-state gain media. If this project succeeds, it will result in the development of novel materials with improved functionalities for various applications and lead to significant industry impact. This project is co-funded by the Directorate for Mathematical and Physical Sciences. The development of wide-gap compound semiconductor crystals based on ternary metal halides is proposed for applications in nuclear radiation detection and infrared (IR) photonics. In this EAGER project, exploratory research will be performed on the material preparation and bulk crystal growth of metal halides. The proposed semiconductors will also be grown with rare earth dopants for applications in IR solid-state gain media. The work includes: the synthesis of candidate materials; purification studies and bulk crystal growth experiments; rare earth doping of purified crystals; and material characterization and modeling for applications in nuclear radiation detection and long-wavelength IR gain media. The exploratory and untested aspect of the proposed EAGER project lies in trying to combine the unique material properties of metal lead halides for two important applications with different physical mechanisms. Detailed studies on the role of defects and impurities on the optical and electrical properties of these materials will be performed as a function of temperature and elemental composition. Material purification and control of defect/impurity levels within the grown bulk crystals will be critical for deriving structure-property relations impacting possible device performance.
期刊论文(1)
专著(0)
科研奖励(0)
会议论文
Crystal growth and characterization of undoped and Dy-doped TlPb 2 Br 5 for infrared lasers and nuclear radiation detection
用于红外激光和核辐射检测的未掺杂和 Dy 掺杂 TlPb 2 Br 5 的晶体生长和表征
DOI: 10.1016/j.jcrysgro.2017.09.029
发表时间: 2017
期刊: Journal of Crystal Growth
影响因子: 1.8
作者: [U. Hommerich, E. Brown, A. Kabir, D. Hart, S. Trivedi, F. Jin, H. Chen]
通讯作者: H. Chen
Research Initiation Award: Development of New Halide-based Rare-Earth Scintillators
  • 批准号:
    1401077
  • 项目类别:
    Standard Grant
  • 资助金额:
    $19.98万
  • 财政年份:
    2014
  • 负责人:
    Uwe Hommerich
  • 依托单位:
Center for Laser Science and Spectroscopy (CLASS)
  • 批准号:
    0630372
  • 项目类别:
    Cooperative Agreement
  • 资助金额:
    $0.0万
  • 财政年份:
    2006
  • 负责人:
    Uwe Hommerich
  • 依托单位:
Infrastructure Support for Doctoral Research in Optics & Photonics
  • 批准号:
    0400041
  • 项目类别:
    Standard Grant
  • 资助金额:
    $100.0万
  • 财政年份:
    2004
  • 负责人:
    Uwe Hommerich
  • 依托单位:
Crystal-Field Engineering of Transition Metal Doped Chalcogenide Laser Materials
  • 批准号:
    0301951
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $25.5万
  • 财政年份:
    2003
  • 负责人:
    Uwe Hommerich
  • 依托单位:
国内基金
海外基金
水稻边界发育缺陷突变体abnormal boundary development(abd)的基因克隆与功能分析
Development of a Linear Stochastic Model for Wind Field Reconstruction from Limited Measurement Data
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Vikrant Gupta
  • 依托单位: