Spintronics in novel low-dimensional semiconductors

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The project is devoted to theoretical investigations of spin-dependent phenomena in emergent semiconductor structures of reduced dimensionality. The systems to be studied include (i) gapless semiconductor structures based on HgTe/HgCdTe quantum wells and BiSb systems, (ii) diluted magnetic semiconductor materials, (iii) quantum wells of low spatial symmetry related to unconventional crystallographic orientation. Further, we will study (iv) spintronics and “isospintronics” of graphene (which possesses Dirac-type carriers and is a close relative of gapless semiconductors) and (v) spin effects in correlated 1D systems with spin-charge separation (most prominent realizations being semiconductor nanostructures and carbon nanotubes). While exploring spin transport and spin relaxation phenomena, we will pay particular attention to electron interaction, which crucially affects the physics of these low-dimensional systems. The interest to these novel materials is additionally motivated by perspectives of their applications for nanoelectronics and spintronics.This is a cooperation project with A.F. Ioffe Physical-Technical Institute (St. Petersburg, Russia) in the framework of the DFG-RFBR agreement. Participation of the Ioffe Institute scientists who are worldleading experts in the field of semiconductor nanostructures (including, in particular, optical phenomena as well as spin transport and relaxation) is crucially important for the Project.