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Spintronics in novel low-dimensional semiconductors

新型低维半导体中的自旋电子学

基本信息

批准号：
198312236
负责人：
Professor Dr. Alexander Mirlin
金额：
--
依托单位：
Institut für Theorie der Kondensierten Materie (TKM)
依托单位国家：
德国
项目类别：
Priority Programmes
财政年份：
2011
资助国家：
德国
起止时间：
2010-12-31 至 2013-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/198312236?language=en
关键词：
Spintronics novel low dimensional semiconductors

项目摘要

The project is devoted to theoretical investigations of spin-dependent phenomena in emergent semiconductor structures of reduced dimensionality. The systems to be studied include (i) gapless semiconductor structures based on HgTe/HgCdTe quantum wells and BiSe(Sb,Te) systems, including topological insulator phases, (ii) diluted magnetic semiconductor materials, (iii) quantum wells of low spatial symmetry related to unconventional crystallographic orientation; and (iv) spin effects in correlated 1D systems with spin-charge separation (most prominent realizations being semiconductor nanostructures and carbon nanotubes). While exploring spin transport and spin relaxation phenomena, we will pay particular attention to electron interaction, which crucially affects the physics of these low-dimensional systems. The interest to these novel materials is additionally motivated by perspectives of their applications for nanoelectronics and spintronics. This is a cooperation project with A.F. Ioffe Physical-Technical Institute (St. Petersburg, Russia) in the framework of the DFG-RFBR agreement. Participation of the Ioffe Institute scientists who are worldleading experts in the field of semiconductor nanostructures (including, in particular, optical phenomena as well as spin transport and relaxation) is crucially important for the Project.

该项目致力于在降维的新兴半导体结构中自旋相关现象的理论研究。研究的系统包括（i）基于HgTe/HgCdTe量子威尔斯和BiSe（Sb，Te）系统的无带隙半导体结构，包括拓扑绝缘体相，（ii）稀磁半导体材料，（iii）与非常规晶体学取向相关的低空间对称性的量子威尔斯;以及（iv）具有自旋-电荷分离的相关1D系统中的自旋效应（最突出的实现是半导体纳米结构和碳纳米管）。在探索自旋输运和自旋弛豫现象的同时，我们将特别关注电子相互作用，这对这些低维系统的物理特性有着至关重要的影响。对这些新材料的兴趣还受到其在纳米电子学和自旋电子学中应用前景的启发。这是与A.F.的合作项目。在DFG-RFBR协议框架内，Ioffe物理技术研究所（俄罗斯彼得堡）。Ioffe研究所的科学家是半导体纳米结构领域（特别是包括光学现象以及自旋输运和弛豫）的世界领先专家，他们的参与对该项目至关重要。