NIRT:Development of Mesoporous, Ultra Low Dielectric Constant, Patterned Films by 3-D Replication of Structured Organic Templates:A University/Industry/NIST Collaboration

研究目的：一个多大学/工业/NIST团队将致力于开发和集成用于半导体器件的介孔超低介电常数薄膜。器件尺寸减小的历史趋势的延续需要具有小于2.4的介电常数（k）的材料，其可以经受住集成的结构和机械要求。 此外，在小于70 nm的尺寸下，实际的集成方案需要提供在多个长度尺度下对长程有序、孔取向和图案化的控制的技术。 一种新的方法提供了这些可能性。 该技术涉及的注入和选择性缩合的金属氧化物前体在一个域的高度有序的嵌段共聚物模板使用超临界（SC）二氧化碳作为反应介质。 然后除去模板以产生介孔氧化物。通过将模板制备与氧化物缩合分开，可以在局部水平上通过使用表面和外部场的域取向和排列来操纵嵌段共聚物结构，并在前体注入之前通过光刻图案化在器件水平上操纵嵌段共聚物结构。 沃特金斯（马萨诸塞大学）将协调NIRT团队，并领导在SC CO2中高度有序的介孔薄膜的开发。奥伯（康奈尔大学）将领导模板的发展直接图案光刻。Burkett（阿默斯特学院）将使用固态NMR表征薄膜结构和成分。 Maroudas（马萨诸塞大学）将开发模型，将薄膜结构与机械性能联系起来。Lin（NIST）将领导开发用于分析图案化高度有序薄膜的新计量工具。来自领先的半导体设备公司Novellus Systems的Schulberg将领导工艺开发和扩大到全工艺晶圆（200和300 mm）的工作，并制定后处理策略和集成方案。 广泛影响：成功制备可行的低k薄膜将对半导体制造业产生巨大的短期影响，这是一个每年1000亿美元的行业。 该方法还为其他金属氧化物纳米结构，包括传感器，光子材料，数据存储阵列和分离介质提供了可实现的技术平台。 在整个计划中，博士后研究员，研究生和本科生将在多学科环境中获得基本技能，从而提高对技术实施需求的认识。 来自大学，学院和行业的多元化PI团队的伙伴关系为指导四年制院校的女性和本科生以及大学/国家实验室接口的博士后高级培训提供了重要机会。

Research Objectives: A Multi-University/Industry/NIST team will address the development and integration of mesoporous, ultra-low dielectric constant films for semiconductor devices. Continuation of the historical trend of reduced device dimensions requires materials with dielectric constants (k) of less than 2.4 that can survive the structural and mechanical demands of integration. Moreover, at dimensions less than 70 nm, techniques that offer control over long range order, pore orientation and patterning at multiple length scales are required for practical integration schemes. A new approach offers these possibilities. The technique involves the infusion and selective condensation of metal oxide precursors within one domain of highly ordered block copolymer templates using supercritical (SC) carbon dioxide as the reaction medium. The template is then removed to produce the mesoporous oxide. By separating template preparation from oxide condensation, the block copolymer architecture can be manipulated at the local level by domain orientation and alignment using surface and external fields and at the device level by lithographic patterning prior to precursor infusion. Watkins (UMass) will coordinate the NIRT Team and lead the development of highly ordered mesoporous films in SC CO2. Ober (Cornell) will lead the development of templates for direct patterning by photolithography. Burkett (Amherst College) will characterize film structure and composition using solid state NMR. Maroudas (UMass) will develop models to relate film architecture to mechanical properties. Lin (NIST) will lead the development of new metrology tools for the analysis of patterned, highly ordered films. Schulberg from Novellus Systems, a leading semiconductor equipment company, will lead process development and scale-up efforts to full process wafers (200 and 300 mm) and develop post-processing strategies and integration schemes. Broad Impact: Successful preparation of viable low k films will have an enormous near term impact on semiconductor manufacturing, a $100 billion/yr industry. The approach also provides a realizable technology platform for other metal oxide nanostructures including sensors, photonic materials, data storage arrays and separation media. Throughout the program, postdoctoral fellows, graduate and undergraduate students will acquire fundamental skills in a multidisciplinary environment that fosters an awareness of the demands of technology implementation. The partnership of a diverse team of PIs from Universities, Colleges, and Industry provides important opportunities for mentoring women and undergraduates from four-year institutions and advanced training of post-docs at the University/National Laboratory interface.