CAREER: Low Temperature Deposition of Thin Metal Films from Supercritical Carbon Dioxide Solution

职业：超临界二氧化碳溶液低温沉积金属薄膜

• 批准号: 9734177
• 负责人: James Watkins
• 金额: $ 26万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2003-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9734177&HistoricalAwards=false
• 关键词: CAREER; Low; Temperature; Deposition; Thin

Abstract - Watkins - 9734177 The demands of present and future microelectronic and optoelectronic device fabrication place stringent requirements on metal deposition schemes. These include high film purity, low temperatures and rapid, controllable deposition rates. The PI postulates that these objectives can be met via Chemical Fluid Deposition (CFD), a new approach to metal deposition that involves the chemical or thermal reduction of soluble organometallic compounds in supercritical carbon dioxide at low temperatures (40-80oC) to yield continuous films on inorganic or organic substrates. CFD exploits the unique, and adjustable, physicochemical properties of SCF solvents, which lie intermediate to those of liquids and gases, to circumvent the limitations of both vapor and liquid phase techniques. In CFD, precursor transport and reduction occurs in solution at significantly lower temperatures and higher reagent concentrations than those of vapor phase techniques such as chemical vapor deposition (CVD). While CFD is a solution-based process, the "gas-like" transport properties of the SCF and its miscibility with gaseous reducing agents such as hydrogen, render the process unencumbered by issues of poor mass transfer and poor deposition rates associated with liquid phase reductions. Preliminary experiments demonstrate that high-purity, continuous platinum and palladium films can be deposited from SCF solution onto silicon wafers and other inorganic substrates at temperatures up to 170oC below those employed in CVD. The research program will focus on the deposition of thin films from carbon dioxide solution by the hydrogenolysis of dimethylcyclooctadine platinum (II) and the deposition of copper films by reduction of copper(II)bis(hexafluoroacetylacetone) and copper(II)bis(2,2,6,6-tetramethyl-3,5-heptanedionate). The precursors were chosen to facilitate a direct comparison of film quality and reduction kinetics in CFD to those of existing techniques and the potential utility of the m etal deposits in microelectronics copper and catalytic platinum devices. The educational portion of the work are to: (1) train graduate students who will work at the interface of engineering and materials chemistry, (2) provide undergraduates with opportunities for research experience, (3) develop a two-course series in materials processing that addresses the interests of students and is reinforced by the expanding materials research efforts in the Department of Chemical Engineering, and (4) incorporate research problems and active learning principles into the classroom and assist in the implementation of interactive teaching tools across the curriculum.

当前和未来微电子和光电子器件制造的需求对金属沉积方案提出了严格的要求。这包括高薄膜纯度、低温和快速、可控的沉积速率。PI假设这些目标可以通过化学流体沉积（CFD）来实现，这是一种新的金属沉积方法，涉及在低温（40-80℃）的超临界二氧化碳中对可溶性有机金属化合物进行化学或热还原，以在无机或有机基底上产生连续薄膜。SCF溶剂位于液体和气体的中间，CFD利用SCF溶剂独特的、可调节的物理化学性质，规避了蒸汽和液相技术的局限性。在CFD中，与化学气相沉积（CVD）等气相技术相比，前驱体在更低的温度和更高的试剂浓度下在溶液中传输和还原。虽然CFD是一种基于溶液的过程，但SCF的“类气体”传输特性及其与气态还原剂（如氢）的混溶性，使得该过程不受与液相还原相关的传质差和沉积速率差的问题的影响。初步实验表明，在比CVD温度低170℃的温度下，SCF溶液可以在硅片和其他无机衬底上沉积高纯度、连续的铂和钯薄膜。该研究项目将重点关注二氧化碳溶液中氢解二甲基环氯丁定铂（II）沉积薄膜，以及铜（II）二（六氟乙酰丙酮）和铜（II）二（2,2,6,6-四甲基-3,5-庚二酸）还原沉积铜薄膜。选择前驱体是为了便于将CFD中的膜质量和还原动力学与现有技术的膜质量和还原动力学进行直接比较，以及在微电子铜和催化铂器件中金属沉积的潜在效用。工作的教育部分是：(1)培养将在工程和材料化学领域工作的研究生；(2)为本科生提供研究经验的机会；(3)开发材料加工的两门系列课程，以满足学生的兴趣，并通过化学工程系不断扩大的材料研究工作得到加强。(4)将研究问题和主动学习原则纳入课堂，并协助在整个课程中实施交互式教学工具。