MRI: Acquisition of SQUID Magnetometer for Ferromagnetic Semiconductor and Oxide Research

我们要求资金购买量子设计超导量子干涉器件（SQUID）磁强计测量掺杂和未掺杂的AlGaN/GaN异质结构上生长的Mn和Cr掺杂的III族氮化物薄膜的磁性和其他晶体Mn基钙钛矿。我们的实验室配备了所有的增长，制造，测试电气和结构能力，但这一关键设备是失踪。该设备将安装在最先进的弗吉尼亚州微电子中心研究实验室在VCU。受GaN：Mn的室温铁磁性和自旋电子学下自旋和电荷输运相结合的潜在应用的启发，我们将研究纳米级半导体铁磁体的基本问题，如磁性的热稳定性，居里温度，磁粘度，磁化率，以及GaN量子点与GaMnN/GaCrN薄膜以及GaMnN或GaCrN量子点与GaN薄膜的相互作用。此外，我们也将研究单晶氧化物的磁性，这是在我们的实验室使用MBE系统和溅射系统产生的。具体地说，将测量场冷和零场冷条件下磁化强度的温度依赖性、磁化滞后和磁弛豫相关行为。这些对于理解这些铁磁半导体和磁性钙钛矿的磁性行为是至关重要的。此外，磁各向异性和与空穴密度或外延生长晶格匹配应变相关的易轴重取向将被研究。由于磁矩的绝对大小非常小，特别是在较高温度下，含有几层稀磁材料的薄膜系统的行为变得复杂。为了高精度地测量这些效应，并获得制造高质量样品的相关信息，我们需要一个配备样品空间烘箱和样品旋转器的SQUID磁强计。该建议的智力价值是提供对自旋上磁自旋行为的物理学的基本和技术理解，基于精确测量稀磁半导体和磁性氧化物的磁化特性的设备，采用最先进的技术制造。这一提议的更广泛的影响是为自旋电子器件的制造提供必要的信息和反馈，寻找新的磁性材料以获得更好的自旋注入，以及理解这类新的铁磁半导体中的自旋自由度。

We request funds to acquire a Quantum Design Superconducting Quantum Interference Device(SQUID) magnetometer to measure the magnetic properties of Mn and Cr-doped Group III-nitride films grown on both doped and undoped AlGaN/GaN heterostructures and singlecrystalline Mn-based perovskites. Our laboratories are equipped with all the growth, fabrication,testing for electrical and structural capabilities, but this critical piece of equipment is missing. Theequipment will be installed in the state of the art Virginia Microelectronic Center researchlaboratories at VCU. Spurred by room temperature ferromagnetism in GaN:Mn and potentialapplications combining spin and charge transport for devices under the umbrella of spintronics,we will investigate the fundamental issues in nanoscale semiconducting ferromagnets, such asthermal stability of magnetism, Curie temperature, magnetic viscosity, coercivity, and inter-dotmagnetic interactions in GaN quantum dots interfaced with GaMnN/GaCrN films, as well asGaMnN or GaCrN dots interfaced with GaN films. Additionally, we will also investigatemagnetism in single crystalline oxides, which are produced in our laboratory using MBE systemsand a sputtering system. Specifically, the temperature dependence of magnetization in both field-cooled and zero-field-cooled conditions, magnetization hysteresis and magnetic relaxation relatedbehavior will be measured. These are critical to understand the magnetic behavior of theseferromagnetic semiconductors and magnetic perovskites.Furthermore, magnetic anisotropy and easy axis reorientations related to hole density or epitaxialgrowth lattice-matching strains will be investigated. The behavior of thin film systems containinga few layers of diluted magnetic materials is complicated by the fact that the absolute magnitudeof the magnetic moment is very small, especially at higher temperatures. In order to measurethese effects with high precision and obtain the relevant information for fabricating high-qualitysamples, we need a SQUID magnetometer equipped with sample space oven and sample rotator.The intellectual merit of the proposal is to provide basic and technological understanding ofphysics of behavior of magnetic spins on spin-based devices from the precise measurement ofmagnetization properties on dilute magnetic semiconductors and magnetic oxides fabricated usingthe state-of-the-art techniques. The broader impacts of this proposal are to provide necessaryinformation and feedback on the fabrication of spinotronic devices, search for new magneticmaterials for better spin-injection, and understanding of spin degrees of freedom in this new classof ferromagnetic semiconductors.