Gate Quality in situ Deposited Semiconductor Insulator Structures: Elemental and Compound Semiconductors

9312422利用化学气相沉积和分子束外延的优点，利用原位生长和诊断设备，解决电介质膜的基础材料科学和工程问题；将研究基于III-V族GaAs和InP半导体的金属-绝缘体-半导体结构。由于III-V半导体本质上更好的输运特性，本研究有望在微电子器件/电路的速度和功率性能方面取得进展。可能的受益者之一是低功耗的数字电子产品，如移动通信系统。此外，该项目如果成功，可以为进一步缩小硅器件的尺寸以提高性能提供一条替代途径。到目前为止，硅以外的半导体一直拒绝应用到被称为金属氧化物场效应晶体管的晶体管类别中，这类晶体管一直是商业电子革命的罪魁祸首。利用现代材料生长和原位表面科学诊断技术，将研究用于高速场效应晶体管应用的具有内在更高电势(比硅)的电介质和半导体。如果成功，该项目将对数字电子系统产生相当大的有益影响，如无线个人移动通信系统、一般电信、信息处理和计算。***

9312422 Morkoc Fundamental materials science and engineering issues of thin dielectric films will be addressed using in situ growth and diagnostics apparatus which exploits the advantages of both chemical vapor deposition and molecular beam epitaxy; metal- insulator-semiconductor structures based on group III-V GaAs and InP semiconductors will be investigated. Due to intrinsically better transport properties of III-V semiconductors, advances in the speed and power performance of microelectronic devices/circuits are anticipated from this study. One of the likely beneficiaries is low-power consumption digital electronics such as mobile communication systems. Moreover, this project, if successful, can provide an alternative path to further size reduction of Si devices for enhanced performance. %%% To date, semiconductors other than silicon have resisted implementation into the class of transistors, known as the metal oxide field effect transistor, that has been responsible for the commercial electronics revolution. Using modern materials-growth and in situ surface science diagnostic techniques, dielectrics and semiconductors with intrinsically higher potential (than silicon) for high speed field effect transistor applications will be studied. If successful, the project will have considerable beneficial impact on digital electronics systems such as wireless personal mobile communication systems; telecommunications, in general; information processing; and computing. ***