Gate Quality in situ Deposited Semiconductor Insulator Structures: Elemental and Compound Semiconductors

原位沉积半导体绝缘体结构的栅极质量：元素和化合物半导体

• 批准号: 9312422
• 负责人: Hadis Morkoc
• 金额: $ 39万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-04-01 至 1998-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9312422&HistoricalAwards=false
• 关键词: Gate; Quality; situ; Deposited; Semiconductor

9312422 Morkoc Fundamental materials science and engineering issues of thin dielectric films will be addressed using in situ growth and diagnostics apparatus which exploits the advantages of both chemical vapor deposition and molecular beam epitaxy; metal- insulator-semiconductor structures based on group III-V GaAs and InP semiconductors will be investigated. Due to intrinsically better transport properties of III-V semiconductors, advances in the speed and power performance of microelectronic devices/circuits are anticipated from this study. One of the likely beneficiaries is low-power consumption digital electronics such as mobile communication systems. Moreover, this project, if successful, can provide an alternative path to further size reduction of Si devices for enhanced performance. %%% To date, semiconductors other than silicon have resisted implementation into the class of transistors, known as the metal oxide field effect transistor, that has been responsible for the commercial electronics revolution. Using modern materials-growth and in situ surface science diagnostic techniques, dielectrics and semiconductors with intrinsically higher potential (than silicon) for high speed field effect transistor applications will be studied. If successful, the project will have considerable beneficial impact on digital electronics systems such as wireless personal mobile communication systems; telecommunications, in general; information processing; and computing. ***

9312422 Morkoc将利用化学气相沉积和分子束外延的优点，利用原位生长和诊断装置解决介电薄膜的基本材料科学和工程问题；基于III-V族GaAs和InP半导体的金属绝缘体半导体结构将被研究。由于III-V半导体具有更好的输运特性，本研究有望提高微电子器件/电路的速度和功率性能。其中一个可能的受益者是低功耗的数字电子产品，如移动通信系统。此外，该项目如果成功，可以为进一步缩小硅器件的尺寸以提高性能提供另一种途径。到目前为止，除了硅以外的半导体还没有被应用到晶体管的类别中，即金属氧化物场效应晶体管，这种晶体管导致了商业电子革命。使用现代材料生长和原位表面科学诊断技术，将研究具有本质上更高电位（比硅）的电介质和半导体用于高速场效应晶体管的应用。如果成功，该项目将对无线个人移动通信系统等数字电子系统产生相当大的有益影响；一般来说，电信；信息加工;和计算。* * *