Investigation of Polarization Effects in Nitride Semiconductors and Heterointerfaces

氮化物半导体和异质界面的极化效应研究

• 批准号: 9972732
• 负责人: Hadis Morkoc
• 金额: $ 33.08万
• 依托单位: Virginia Commonwealth University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-09-01 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9972732&HistoricalAwards=false
• 关键词: Investigation; Polarization; Effects; Nitride; Semiconductors

This project addresses the determination and control of GaN film polarity. Due to the lack of native substrates, nitrides are typically grown on foreign substrates such as sapphire. This substrate limitation coupled with the polar nature of nitride growth leads to two possible surface terminations, Ga or N. A mixture of these two terminations leads to the presence of inversion domains, which cause polarization effects. These effects arise from two sources: spontaneous polarization at heterointerfaces due to the ionic nitride bonds, and strain-induced piezoelectric polarization caused by lattice misfit or thermal strain. Inversion domains can adversely affect transport properties, band alignments, and carrier concentrations in heterojunction devices. In this research, fundamental materials science phenomena associated with domain structure and film polarization will be investigated for greater understanding and control. The approach is to study the influence of substrate surface and growth initiation on film polarity, the role of spontaneous polarization and layer ordering on band discontinuities, and the effect of piezoelectric polarization on electrical and optical properties. The goal is to achieve fundamental understanding and thereby be able to produce single-domain films, and to grow heterostructures, e.g., quantum wells whose properties depend on the relative magnitudes of spontaneous and piezoelectric polarization effects. Growth techniques including Molecular Beam Epitaxy with in-situ monitoring and Organometallic Vapor Phase Epitaxy will be used. Analysis techniques such as in-situ reflection high energy electron diffraction, ex-situ atomic force microscopy/scanning tunneling microscopy, high-resolution x-ray diffraction, photoemission, and CW/time-resolved luminescence will be employed to investigate film morphology, strain, band discontinuities, and emission energies.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. Once a fundamental understanding of the polarization fields in heterostructure devices is obtained, it will be possible to design structures that more completely realize the potential of GaN-based electronic/photonic devices and circuits. An important feature of this collaborative, interdisciplinary program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

该项目致力于GaN薄膜极性的确定和控制。由于缺乏原生衬底，氮化物通常生长在异质衬底（例如蓝宝石）上。这种衬底限制加上氮化物生长的极性性质导致两种可能的表面终止，Ga或N。这两个终端的混合物导致反转域的存在，这引起极化效应。这些影响来自两个来源：由于离子氮化物键在异质界面处的自发极化，以及由晶格失配或热应变引起的应变诱导的压电极化。反型畴可以不利地影响异质结器件中的输运性质、能带对准和载流子浓度。在这项研究中，与畴结构和薄膜极化相关的基本材料科学现象将被调查，以更好地理解和控制。该方法是研究基板表面和生长引发膜极性的影响，自发极化和带不连续性的层排序的作用，和压电极化的电学和光学性能的影响。目标是实现基本的理解，从而能够产生单畴膜，并生长异质结构，例如，量子威尔斯，其性质取决于自发和压电极化效应的相对大小。生长技术包括分子束外延与原位监测和有机气相外延将被使用。分析技术，如原位反射高能电子衍射，非原位原子力显微镜/扫描隧道显微镜，高分辨率X射线衍射，光电发射和CW/时间分辨发光将被用来研究薄膜形态，应变，能带不连续性和发射能量。该项目涉及材料科学专题领域的基础研究问题，具有很高的潜在技术相关性。一旦对异质结器件中的偏振场有了基本的了解，就有可能设计出更完全地实现GaN基电子/光子器件和电路潜力的结构。这个合作，跨学科计划的一个重要特点是通过在一个基本的和技术上重要的领域培养学生的研究和教育的整合。 ***