SBIR Phase I: Vertical EML Source for High-Speed Interconnects
SBIR Phase I: Vertical EML Source for High-Speed Interconnects
批准号:
0339336
负责人:
Majid Riaziat
金额:
$9.94万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-01-01 至 2004-06-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
This Small Business Innovation Research (SBIR) Phase I project proposes to demonstrate technical feasibility of a high-speed Vertical Electro-absorptive Modulated Laser (V-EML) for high-speed interconnects. This novel technology is built on the VCSEL (Vertical Cavity Surface Emitting Laser) concept and has all of its nominal advantages such as low-power consumption, on-wafer testability, and possibility of two-dimensional arrays. This technology should eliminate the complications associated with direct modulation of the VCSEL at high speeds. Modulation will be done externally by an electro-absorptive modulator that is integrated with the VCSEL either in a hybrid fashion or monolithically. This approach allows clean modulation without overshoot at speeds higher than 10 Gbps and easily reaching 40 Gbps. Furthermore, by decoupling the modulation issues from VCSEL emission, it provides additional design freedom for achieving extra stability, lower noise and higher reliability. This concept is expected to strongly impact the chip to chip and board to board interconnect industry by virtually removing modulation speed limit and minimizing signal distortion of the optical transmitter.Vertical laser sources in general have cost and size advantages over horizontal emitters in low to medium-power single-device applications. They also lend themselves more easily to two-dimensional array fabrication. The V-EML concept further removes the limitations of direct modulation from these devices. With external modulation, the V-EML can be driven by simpler electronics and at higher speeds. The application that this work is intended for is high-speed interconnects. This can either be in the form of backplane connections, distributed board-to-board connections or chip-to-chip optical interconnects (C2OI). VCSEL arrays known as "smart pixels" have been proposed and tested for such applications. A major impact of this technology is that it will help to remove the chip and board boundaries as significant obstacles to data transport, and will make possible truly distributed and scalable systems of the future. The high-speed interconnects optical communications market size is estimated to be more than $9 billion in 2010.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
SBIR Phase II:Next Generation Vertical Cavity Surface Emitting Lasers
-
批准号:1353601
-
项目类别:Standard Grant
-
资助金额:$75.0万
-
财政年份:2014
-
负责人:Majid Riaziat
-
依托单位:
SBIR Phase I: Next Generation Vertical Cavity Surface Emitting Lasers
-
批准号:1214881
-
项目类别:Standard Grant
-
资助金额:$15.0万
-
财政年份:2012
-
负责人:Majid Riaziat
-
依托单位:
SBIR Phase I: Single-Mode Single-Polarization VCSELs at any Wavelength
-
批准号:1014127
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2010
-
负责人:Majid Riaziat
-
依托单位:
SBIR Phase II: Vertical Electroabsorptive Modulated Laser (EML) Source for High-Speed Interconnects
-
批准号:0450619
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2005
-
负责人:Majid Riaziat
-
依托单位:
国内基金
海外基金
登录
查看更多内容
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark
Supercooled Phase Transition
-
批准号:24ZR1429700
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2024
-
负责人:YUICHIRO NAKAI
-
依托单位:
ATLAS实验探测器Phase 2升级
-
批准号:11961141014
-
项目类别:国际(地区)合作与交流项目
-
资助金额:3350万元
-
批准年份:2019
-
负责人:刘衍文
-
依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
-
批准号:41802035
-
项目类别:青年科学基金项目
-
资助金额:12.0万元
-
批准年份:2018
-
负责人:张里
-
依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究
-
批准号:61675216
-
项目类别:面上项目
-
资助金额:60.0万元
-
批准年份:2016
-
负责人:叶青
-
依托单位:
基于Phase-type分布的多状态系统可靠性模型研究
-
批准号:71501183
-
项目类别:青年科学基金项目
-
资助金额:17.4万元
-
批准年份:2015
-
负责人:陈童
-
依托单位:
纳米(I-Phase+α-Mg)准共晶的临界半固态形成条件及生长机制
-
批准号:51201142
-
项目类别:青年科学基金项目
-
资助金额:25.0万元
-
批准年份:2012
-
负责人:张英波
-
依托单位:
连续Phase-Type分布数据拟合方法及其应用研究
-
批准号:11101428
-
项目类别:青年科学基金项目
-
资助金额:23.0万元
-
批准年份:2011
-
负责人:黄卓
-
依托单位:
D-Phase准晶体的电子行为各向异性的研究
-
批准号:19374069
-
项目类别:面上项目
-
资助金额:6.4万元
-
批准年份:1993
-
负责人:张殿琳
-
依托单位: