SBIR Phase I: Vertical EML Source for High-Speed Interconnects

SBIR 第一阶段：用于高速互连的垂直 EML 源

• 批准号: 0339336
• 负责人: Majid Riaziat
• 金额: $ 9.94万
• 依托单位: OEPIC SEMICONDUCTORS, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-01 至 2004-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0339336&HistoricalAwards=false
• 关键词: SBIR; Phase; Vertical; EML; Source

This Small Business Innovation Research (SBIR) Phase I project proposes to demonstrate technical feasibility of a high-speed Vertical Electro-absorptive Modulated Laser (V-EML) for high-speed interconnects. This novel technology is built on the VCSEL (Vertical Cavity Surface Emitting Laser) concept and has all of its nominal advantages such as low-power consumption, on-wafer testability, and possibility of two-dimensional arrays. This technology should eliminate the complications associated with direct modulation of the VCSEL at high speeds. Modulation will be done externally by an electro-absorptive modulator that is integrated with the VCSEL either in a hybrid fashion or monolithically. This approach allows clean modulation without overshoot at speeds higher than 10 Gbps and easily reaching 40 Gbps. Furthermore, by decoupling the modulation issues from VCSEL emission, it provides additional design freedom for achieving extra stability, lower noise and higher reliability. This concept is expected to strongly impact the chip to chip and board to board interconnect industry by virtually removing modulation speed limit and minimizing signal distortion of the optical transmitter.Vertical laser sources in general have cost and size advantages over horizontal emitters in low to medium-power single-device applications. They also lend themselves more easily to two-dimensional array fabrication. The V-EML concept further removes the limitations of direct modulation from these devices. With external modulation, the V-EML can be driven by simpler electronics and at higher speeds. The application that this work is intended for is high-speed interconnects. This can either be in the form of backplane connections, distributed board-to-board connections or chip-to-chip optical interconnects (C2OI). VCSEL arrays known as "smart pixels" have been proposed and tested for such applications. A major impact of this technology is that it will help to remove the chip and board boundaries as significant obstacles to data transport, and will make possible truly distributed and scalable systems of the future. The high-speed interconnects optical communications market size is estimated to be more than $9 billion in 2010.

该小型企业创新研究（SBIR）第一阶段项目旨在证明高速垂直电吸收调制激光器（V-EML）用于高速互连的技术可行性。这项新技术是建立在VCSEL（垂直腔面发射激光器）的概念，并具有其所有的名义优势，如低功耗，晶圆上的可测试性，和二维阵列的可能性。该技术应消除与高速VCSEL的直接调制相关的复杂性。调制将通过电吸收调制器在外部完成，该电吸收调制器以混合方式或单片地与VCSEL集成。这种方法允许在高于10 Gbps的速度下进行无过冲的干净调制，并且很容易达到40 Gbps。此外，通过将调制问题与VCSEL发射解耦，它提供了额外的设计自由度，以实现额外的稳定性、更低的噪声和更高的可靠性。这一概念有望通过实际消除调制速度限制和最小化光发射器的信号失真，对芯片到芯片和板到板互连行业产生重大影响。在低到中等功率的单器件应用中，垂直激光源通常比水平发射器具有成本和尺寸优势。它们也更容易用于二维阵列制造。V-EML概念进一步消除了这些器件直接调制的限制。通过外部调制，V-EML可以由更简单的电子设备以更高的速度驱动。这项工作的目的是为应用程序是高速互连。这可以是背板连接、分布式板对板连接或芯片对芯片光互连（C2 OI）的形式。被称为“智能像素”的VCSEL阵列已经被提出并测试用于这样的应用。这项技术的一个主要影响是，它将有助于消除芯片和电路板边界作为数据传输的重大障碍，并将使未来真正的分布式和可扩展系统成为可能。高速互连光通信市场规模预计在2010年将超过90亿美元。