Collaborative Research: Wire Sawing - Mechanics and Design Space Exploration

本计画之研究目的为了解线切割矽晶圆之长波长波纹产生之基本机制，并探讨金刚石从金刚石涂层线中拔出之条件。也将调查这种拔出对线锯晶片的表面质量和完整性的影响。分析和数值模拟相结合，将追求。将开发一个流体-结构相互作用模型，用于长波长波度的产生，并将进行热-机械耦合分析，用于预测金刚石拔出条件。模拟结果将在实验室条件下根据实验观察进行验证。经过验证的机械模型，然后将被用来开发集成的工艺模型和控制算法的线切割process.The目前的线切割方法的晶片切片留下了长波长的波纹的晶片表面上，必须通过昂贵的研磨过程中进行校正。如果成功的话，这个项目将改善线切割工艺，大大减少诱导波纹，从而减少研磨的需要，提高晶圆生产的成本效益。磨粒脱出影响砂轮的性能，建立磨粒脱出机理模型有助于磨削工艺设计。 这些结果将对集成电路工业具有相当大的价值，特别是当工业转向更大的晶片直径和更精细的电路结构时。

The research goals of this project are to understand the fundamental mechanics of the long wavelength waviness in wire sawed silicon wafers and to investigate the conditions for diamond pull-out from diamond coated wires. The implications of such pull-outs on surface quality and integrity of wire sawed wafers will also be investigated. A combination of analytical and numerical simulations will be pursued. A fluid-structure interaction model will be developed for long wavelength waviness generation, and a coupled thermo-mechanical analysis will be pursued for predictions of diamond pull-out conditions. Simulation results will be verified against experimental observations under laboratory conditions. Verified mechanistic models will then be utilized to develop integrated process models and control algorithms for the wire sawing process.The current wire sawing method of wafer slicing leaves a long wavelength waviness on the wafer surface that must be corrected by an expensive lapping process. If successful, this project will improve the wire sawing process to greatly reduce the induced waviness, thereby reducing the need for lapping, and enhancing the cost effectiveness of wafer production. Abrasive pull-out affects the performance of grinding wheels, and a mechanistic model of this phenomenon will aid in grinding process design as well. These results will be of considerable value to the integrated circuit industry, particularly as the industry goes to bigger wafer diameters and finer circuit structures.